Abstract: A method for manufacturing a vehicle wheel includes: a casting process of manufacturing the wheel in a one-piece body having a forming end and a temporary flange protruding at inner and outer sides of the wheel, respectively, wherein the one-piece body further includes a resonance chamber forming groove; a primary shape machining process of forming a stepped part at an outer circumferential side of the resonance chamber forming groove; a flow forming process of bending the forming end to be seated on the stepped part; a friction stir welding process of integrally bonding a portion where the forming end and the stepped part are in close contact with each other; a fine machining process of removing the temporary flange; and a sound-absorbing hole machining process of forming a sound-absorbing hole for communicating between the resonance chamber and an interior space of a tire in the forming end.

Abstract: A sensor device includes: a sensor panel including sensors arranged in a matrix form and sensor lines electrically connected to the sensors one-to-one; and a sensor driver configured to receive sensing signals from the sensors through the sensor lines, wherein the sensor driver is configured to simultaneously receive a first sensing signal from a first sensor using a first reference signal and a second sensing signal from a second sensor using a second reference signal, wherein the first reference signal and the second reference signal have a same waveform, a phase of the second reference signal is different from a phase of the first reference signal, and wherein a phase of the second sensing signal is different from a phase of the first sensing signal.

Abstract: A touch sensor includes: a display panel to display an image, and including at least three touch sensing areas; at least one slave processor connected to a second touch sensing area from among the at least three touch sensing areas, and to generate touch coordinate data for the second touch sensing area; and a plurality of master processors connected to first and third touch sensing areas from among the at least three touch sensing areas, and to generate touch coordinate data for the first and third touch sensing areas, respectively. The at least one slave processor is to transmit the touch coordinate data for at least the second touch sensing area to any one of the plurality of master processors, or to another adjacent slave processor.

Abstract: The present disclosure relates to a semiconductor device, and more particularly, relates to a non-volatile memory device having a three-dimensional structure. The non-volatile memory device according to an embodiment of the present disclosure includes a first chip having a peripheral circuit therein and a second chip that is stacked on the first chip and that includes memory blocks. The second chip includes a common source line that has a plate shape and extends in first and second directions, first and second dummy common source lines disposed at a same height level as the common source line, an upper insulating layer that covers the common source line and the first and second dummy common source lines, and first and second dummy contact plugs extending in a third direction and that are electrically connected to the first and second dummy common source lines, respectively, and used as electrodes of a vertical capacitor.

Abstract: A semiconductor wafer includes unit regions that are repeatedly arranged, and each unit region of the unit regions includes: at least one first chip region; and at least one second chip region spaced apart from the at least one first chip region by a scribe line, wherein a first area size of each of the at least one first chip region is different from a second area size of each of the at least one second chip region from a planar viewpoint.

Abstract: A display device includes a display unit having a display area with a first hole formed therein, and an input sensing unit which is disposed on the display unit and having a second hole corresponding to the first hole. the input sensing unit includes a base layer which includes: an adjacent area adjacent to the second hole; and a sensing area overlapping the display area, detection electrodes disposed on the sensing area; and a first connection wiring disposed on the adjacent area and that electrically connects at least two detection electrodes spaced apart by the second hole, disposed at respective sides of the second hole. The display unit includes dams disposed adjacent to the first hole, each of the dams forming a closed loop along edges of the first hole. The first connection wiring overlaps at least one of the dams.

Abstract: A display device includes a display unit having a display area with a first hole formed therein, and an input sensing unit which is disposed on the display unit and having a second hole corresponding to the first hole, the input sensing unit includes a base layer which includes: an adjacent area adjacent to the second hole; and a sensing area overlapping the display area, detection electrodes disposed on the sensing area; and a first connection wiring disposed on the adjacent area and that electrically connects at least two detection electrodes spaced apart by the second hole, disposed at respective sides of the second hole. The display unit includes dams disposed adjacent to the first hole, each of the dams forming a closed loop along edges of the first hole. The first connection wiring overlaps at least one of the dams.

Abstract: An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.

Abstract: A display device includes a display unit having a display area with a first hole formed therein, and an input sensing unit which is disposed on the display unit and having a second hole corresponding to the first hole. the input sensing unit includes a base layer which includes: an adjacent area adjacent to the second hole; and a sensing area overlapping the display area, detection electrodes disposed on the sensing area; and a first connection wiring disposed on the adjacent area and that electrically connects at least two detection electrodes spaced apart by the second hole, disposed at respective sides of the second hole. The display unit includes dams disposed adjacent to the first hole, each of the dams forming a closed loop along edges of the first hole. The first connection wiring overlaps at least one of the dams.

Abstract: A vertical memory device includes a gate line structure including a cell region in which a vertical channel structure is formed, and a first connection region and a second connection region which are respectively arranged at first and second ends of the cell region in a first direction. Each of the first connection region and the second connection region includes a first protrusion of the first gate line and a second protrusion of the second gate line which are parallel to a top surface of the substrate and arranged as steps in a second direction perpendicular to the first direction. The first protrusion of the second connection region is arranged diagonally from the first protrusion of the first connection region with respect to a center line of the cell region which is parallel to the first direction.

Abstract: An integrated circuit includes; a substrate including a single active region, a first active resistor formed on the substrate, and a transistor including a first junction area in the single active region. The first active resistor and the transistor are electrically connected through the first junction area. The first active resistor is formed between a first node and a second node included in the first junction area. The first node is connected to a first contact, and the second node is connected to a second contact.

Abstract: An input sensing device includes a first base layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, a plurality of third sensing electrodes, and a plurality of fourth sensing electrodes. The first sensing electrodes are arranged on the first base layer along a first direction. The second sensing electrodes are arranged on the first base layer in different rows from the first sensing electrodes. The third sensing electrodes are arranged on the second sensing electrodes along a second direction different from the first direction. The third sensing electrodes overlap the second sensing electrodes. The fourth sensing electrodes are arranged on the same layer as the third sensing electrodes and overlap the first sensing electrodes. A constant voltage is applied to the third sensing electrodes during a touch pressure sensing operation.

Abstract: A vertical memory device includes a gate line structure including a cell region in which a vertical channel structure is formed, and a first connection region and a second connection region which are respectively arranged at first and second ends of the cell region in a first direction. Each of the first connection region and the second connection region includes a first protrusion of the first gate line and a second protrusion of the second gate line which are parallel to a top surface of the substrate and arranged as steps in a second direction perpendicular to the first direction. The first protrusion of the second connection region is arranged diagonally from the first protrusion of the first connection region with respect to a center line of the cell region which is parallel to the first direction.

Abstract: A display device is provided. The display device includes a display unit which includes a display area and a first hole formed in the display area; and an input sensing unit which is disposed on the display unit and comprises a second hole corresponding to the first hole, the input sensing unit further including: a base layer which includes: an adjacent area disposed adjacent to the second hole and a sensing area overlapping the display area and surrounding the adjacent area; detection electrodes which are disposed on the sensing area; and a first connection wiring which is disposed on the adjacent area, the first connection wire electrically connecting at least two detection electrodes spaced apart by the second hole, disposed at respective sides of the second hole.

Abstract: A touch sensor includes a substrate, a touch input unit, a plurality of wires, and a pad unit. The touch input unit is disposed on the substrate and includes a plurality of sensing electrodes for sensing user touch. The pad unit includes a plurality of pads electrically connected to the sensing electrodes through the wires. The pads include a first pad. The first pad includes a first conductive film disposed on the substrate, an insulating film disposed on the first conductive film, and a second conductive film disposed on the insulating film. The insulating film includes a plurality of first-type holes and a plurality of second-type holes. Each first-type hole of the first-type holes is smaller than each second-type hole of the second-type holes.

Abstract: A nonvolatile memory device includes a substrate; a memory cell array formed on the substrate in a vertically stacked structure; and a row decoder configured to supply a row line voltage to the memory cell array, the row decoder including a plurality of pass transistors. The row line voltage is supplied through a plurality of row lines connecting the pass transistors to the memory cell array. Each of the row lines includes a wiring line parallel with a main surface of the substrate and a contact perpendicular to the main surface of the substrate. The wiring line of at least one row line among the row lines includes a plurality of conductive lines.

Abstract: A touch screen and a display device having the same are disclosed. The touch screen includes an insulating substrate including a sensing region and a peripheral region, a plurality of sensing electrodes disposed in the sensing region, a plurality of wirings disposed in the peripheral region and electrically connected to the plurality of sensing electrodes, a plurality of pads disposed in the peripheral region and electrically connected to the plurality of wirings, an optical film disposed on an upper portion of the plurality of sensing electrodes, a flexible circuit board electrically connected to the plurality of pads, and a reinforcing member disposed on the flexible circuit board corresponding to the plurality of pads, wherein a first height measured from the insulating substrate to an upper surface of the reinforcing member is equal to a second height measured from the insulating substrate to an upper surface of the optical film.

Abstract: A semiconductor wafer includes unit regions that are repeatedly arranged, and each unit region of the unit regions includes: at least one first chip region; and at least one second chip region spaced apart from the at least one first chip region by a scribe line, wherein a first area size of each of the at least one first chip region is different from a second area size of each of the at least one second chip region from a planar viewpoint.

Abstract: An input sensing device includes a first base layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, a plurality of third sensing electrodes, and a plurality of fourth sensing electrodes. The first sensing electrodes are arranged on the first base layer along a first direction. The second sensing electrodes are arranged on the first base layer in different rows from the first sensing electrodes. The third sensing electrodes are arranged on the second sensing electrodes along a second direction different from the first direction. The third sensing electrodes overlap the second sensing electrodes. The fourth sensing electrodes are arranged on the same layer as the third sensing electrodes and overlap the first sensing electrodes. A constant voltage is applied to the third sensing electrodes during a touch pressure sensing operation.

Abstract: An input sensing device includes a first base layer, a plurality of first sensing electrodes, a plurality of second sensing electrodes, a plurality of third sensing electrodes, and a plurality of fourth sensing electrodes. The first sensing electrodes are arranged on the first base layer along a first direction. The second sensing electrodes are arranged on the first base layer in different rows from the first sensing electrodes. The third sensing electrodes are arranged on the second sensing electrodes along a second direction different from the first direction. The third sensing electrodes overlap the second sensing electrodes. The fourth sensing electrodes are arranged on the same layer as the third sensing electrodes and overlap the first sensing electrodes. A constant voltage is applied to the third sensing electrodes during a touch pressure sensing operation.