Abstract: A method for compact and flat bismuth metal preparation by electrolysis is provided. In the method, one or more of ?-naphthol, acacia, sulfonated and vulcanized alkylphenol ethoxylate and naphthol ethoxylate oxides are added to the acidic solution of bismuth methanesulfonate as additives, and the cathodic bismuth is obtained by electrolysis at 20-80° C. The method for bismuth metal preparation is simple and easy to promote, environment-friendly, and the obtained bismuth metal has a flat and compact surface and good plate formation effect.

Abstract: A non-transitory computer-readable medium stores instructions readable and executable by a workstation (18) including at least one electronic processor (20) to perform an image reconstruction method (100). The method includes: operating a positron emission tomography (PET) imaging device (12) to acquire imaging data on a frame by frame basis for frames along an axial direction with neighboring frames overlapping along the axial direction wherein the frames include a frame (k), a preceding frame (k?1) overlapping the frame (k), and a succeeding frame (k+1) overlapping the frame (k); reconstructing an image of the frame (k) using imaging data from the frame (k), the preceding frame (k?1), and the succeeding frame (k+1).

Abstract: A system (10) and a method (100) iteratively reconstruct an image of a target volume of a subject. In each iteration of a plurality of iterations, an estimate image of the target volume (54) is forward projected (58) and compared (62) to received event data (44) to determine a discrepancy (64). The discrepancy (64) is back projected (66) and the back projection (68) updates (70) the estimate image (54). In at least one iteration, the estimate image (54) is filtered (52) in the image domain prior to being back projected.

Abstract: Vacuum glass includes a piece of upper glass, a piece of lower glass, and a closed vacuum layer sandwiched between the upper class and the lower glass, the peripheries of the upper glass and the lower glass are in seal connection using two or more layers of sealing material, the upper glass and the lower glass are convex glass or flat glass, convex surfaces of the convex glass face outward, and supports are disposed between two pieces of flat glass. The manufacturing method of the vacuum glass is simple, the prepared vacuum glass and tempered vacuum glass solve the defects in the prior art, can ensure the airtightness and service life of the vacuum glass, and are suitable for mechanization, automation, and mass production.

Abstract: A low pressure air or vacuum glass and manufacturing method thereof, the low pressure air or vacuum glass comprising upper glass and lower glass; the upper glass and the lower glass are flat glass or convex glass; the peripheries of the upper glass and the lower glass are provided with an edge sealing bar frame and/or an edge sealing groove, and are welded together via a low temperature glass solder, thus forming a closed low pressure air layer or vacuum layer therebetween. The low pressure or vacuum glass is of simple manufacturing process, low cost, high production efficiency, reliable sealing connection, and good sealing effect.

Abstract: A system (10) and a method (100) iteratively reconstruct an image of a target volume of a subject. In each iteration of a plurality of iterations, an estimate image of the target volume (54) is forward projected (58) and compared (62) to received event data (44) to determine a discrepancy (64). The discrepancy (64) is back projected (66) and the back projection (68) updates (70) the estimate image (54). In at least one iteration, the estimate image (54) is filtered (52) in the image domain prior to being back projected.

Abstract: A nuclear medicine scanner system (1) includes an intelligent scheduler (2) which schedules a plurality of patients, each for an ordered nuclear medicine scanning procedure with a nuclear medicine scanning device (4) based on data mined from prior patients with like scanning procedures and in a time window which minimizes the patient dose.

Abstract: A low pressure air or vacuum glass and manufacturing method thereof, the low pressure air or vacuum glass comprising upper glass and lower glass; the upper glass and the lower glass are flat glass or convex glass; the peripheries of the upper glass and the lower glass are provided with an edge sealing bar frame and/or an edge sealing groove, and are welded together via a low temperature glass solder, thus forming a closed low pressure air layer or vacuum layer therebetween. The low pressure or vacuum glass is of simple manufacturing process, low cost, high production efficiency, reliable sealing connection, and good sealing effect.

Abstract: A PET apparatus includes a detector array including individual detectors which receive radiation events from an imaging region. A movement controller controls at least one of relative longitudinal movement between a subject support and the detector array and circumferential movement between the detector array and the subject. A time stamp processor assigns a time stamp to each received radiation event. A list mode event storage buffer stores time stamped events. An event verification processor screens for coincidentally received radiation events, locations at which each pair of corresponding coincidentally received events defining a line of response. A reconstruction processor reconstructs valid events into an image representation of the imaging region.

Abstract: A modeling method is provided that includes receiving a computational model of a structure and slicing the computational model into a plurality of circuit prints. The plurality of slices may include essential circuit prints and backfill circuit prints. Various unknowns may be eliminated between essential circuit prints of the computational model. The unknowns to be eliminated may include volume unknowns and backfill circuit-print unknowns. The numerical system formed by circuit-print unknowns may be divided into a plurality of blocks. The blocks may be solved in turn. One block may be solved by projecting the contributions from other blocks to this block. The solution of the one block may be translated to other blocks to solve unknowns therein. The computational model may then be solved to determine electromagnetic and circuit characteristics of the structure.

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Abstract: In one embodiment, an interconnect structure may be analyzed to determine electromagnetic characteristics of the structure by identifying structure seeds corresponding to the structure; modeling the structure seeds to obtain field patterns; and processing the field patterns to obtain the electromagnetic characteristics.

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Abstract: An arrangement is provided for using a precision space (“p-space”) to represent s-parameters when analyzing/simulating a circuit/network. The p-space is one dimensional with a value range corresponding to the value range of s-parameters. The p-space is divided into multiple slots where the number of slots may depend on the permissible precision of s-parameter values. A mapping relationship between s-parameters and p-space slots may be obtained by partitioning an s-parameter matrix. Based on the mapping relationship, p-space representations of original s-parameters may be generated through a forward projection process from s-parameters in a two-dimensional matrix to the one-dimensional p-space. During the simulation process, a p-space representation may be projected back to original s-parameters in a matrix based on the mapping relationship.

Abstract: An arrangement is provided for using s-parameters to obtain characteristics of a device under test (“DUT”) between a number of selected observation locations. The DUT may be represented by a network of models such as lumped device models and transmission line models. S-parameters between the selected nodes may be measured based on the DUT representation at a plurality of frequency points. The measured s-parameters may be converted into their precision space (“p-space”) representations, which may then be submitted to a simulator to obtain the DUT characteristics at the selected observation nodes.

Abstract: A modeling method is provided that includes receiving a computational model of a structure and slicing the computational model into a plurality of circuit prints. The plurality of slices may include essential circuit prints and backfill circuit prints. Various unknowns may be eliminated between essential circuit prints of the computational model. The unknowns to be eliminated may include volume unknowns and backfill circuit-print unknowns. The numerical system formed by circuit-print unknowns may be divided into a plurality of blocks. The blocks may be solved in turn. One block may be solved by projecting the contributions from other blocks to this block. The solution of the one block may be translated to other blocks to solve unknowns therein. The computational model may then be solved to determine electromagnetic and circuit characteristics of the structure.

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.

Abstract: An apparatus and methods for modifying isolation structure configurations for MOS devices to either induce or reduce tensile and/or compressive stresses on an active area of the MOS devices. The isolation structure configurations according to the present invention include the use of low-modulus and high-modulus, dielectric materials, as well as, tensile stress-inducing and compressive stress-inducing, dielectric materials, and further includes altering the depth of the isolation structure and methods for modifying isolation structure configurations, such as trench depth and isolation materials used, to modify (i.e., to either induce or reduce) tensile and/or compressive stresses on an active area of a semiconductor device.