Abstract: Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Abstract: Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Abstract: Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Abstract: Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

Abstract: A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.

Abstract: A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.

Abstract: A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.

Abstract: A nanoscale variable resistor including a metal nanowire as an active element, a dielectric, and a gate. By selective application of a gate voltage, stochastic transitions between different conducting states, and even length, of the nanowire can be induced and with a switching time as fast as picoseconds. With an appropriate choice of dielectric, the transconductance of the device, which may also be considered an “electromechanical transistor,” is shown to significantly exceed the conductance quantum G0=2e2/h.

Abstract: A molecular-based switching device and method for controlling charge transport across a molecule. The molecular-based switching device includes a molecule having first and second nodes in between which destructive quantum interference restricts electrical conduction from the first node to the second node in an off-state, a first electrode connected to the first node and configured to supply charge carriers to the first node, a second electrode connected to the second node and configured to remove the charge carriers from the second node, and a control element configured to reduce coherence in or alter charge transport paths between the first and second nodes so as to reduce existing destructive quantum interference and permit flow of the charge carriers from the first node to the second node.