Abstract: The present disclosure relates to methods and apparatuses for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. The disclosure further relates to a transition metal nitride layer, to a semiconductor structure and a device, as well as to a deposition assembly for depositing a transition metal nitride on a substrate.

Abstract: Compositions, related methods, and related systems are disclosed. The compositions can comprise a precursor and a liquid solvent. The precursor can be unstable in substantially pure form in an inert atmosphere at a temperature of at least 10° C. to at most 100° C. The solvent can have a vapor pressure of at most 1.0 mPa at a temperature of 20° C.

Abstract: The current disclosure relates to methods of depositing a material comprising a transition metal and a halogen on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a layer that comprises a transition metal and a halogen. In the method, transition metal and halogen is deposited on a substrate by a cyclical deposition process, and the method includes providing a substrate in a reactor chamber, providing a transition metal precursor into the reactor chamber in vapor phase, and providing a haloalkane precursor into the reactor chamber in vapor phase to form a material comprising transition metal and halogen on the substrate. The disclosure further relates to a deposition assembly for depositing a material including a transition metal and a halogen on a substrate.

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

Abstract: The disclosure relates to methods of selectively depositing material comprising a group 3 to 6 transition metal on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The method includes providing a substrate in a reaction chamber, providing a transition metal precursor into the reaction chamber in a vapor phase, wherein the transition metal precursor comprises an aromatic ligand and providing a second precursor into the reaction chamber in a vapor phase to deposit transition metal on the first surface of the substrate. The disclosure further relates to a transition metal layers, and to deposition assemblies.

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Abstract: Methods of depositing transition metal on a substrate. The disclosure further relates to a transition metal layer, to a structure and to a device comprising a transition metal layer. In the method, transition metal is deposited on a substrate by a cyclical deposition process, and the method comprises providing a substrate in a reaction chamber, providing a transition metal precursor to the reaction chamber in a vapor phase and providing a reactant to the reaction chamber in a vapor phase to form transition metal on the substrate. The transition metal precursor comprises a transition metal from any of groups 4 to 6, and the reactant comprises a group 14 element selected from Si, Ge or Sn.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to the reaction chamber in a vapor phase, and a nitrogen precursor is provided into the reaction chamber in a vapor phase to form a transition metal nitride on the substrate. A transition metal nitride layer, a semiconductor structure and a device, as well as a deposition assembly for depositing a transition metal nitride on a substrate are further provided.

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

Abstract: Methods and systems for forming a p-type doped silicon germanium layer. The p-type doped silicon germanium layer can include silicon, germanium, gallium, and, in at least some cases, indium.

Abstract: Disclosed are methods and systems for forming a silicon-containing layer on a substrate. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a silicon precursor pulse that comprises exposing the substrate to a silicon precursor. The silicon precursor comprises silicon and one or more of a group 13 element and a group 15 element. A deposition cycle further comprises a plasma pulse that comprises exposing the substrate to a plasma treatment. The plasma treatment comprises generating a plasma.

Abstract: The disclosed and claimed subject matter relates to thermal ALE processing of metal oxide films using one or more fluorinating agent and one or more chlorinating agent.

Abstract: Disclosed are methods and systems for depositing layers comprising a Group 13 element on a surface of a substrate via contacting the substrate with at least a vapor-phase first precursor and a vapor-phase second precursor comprising an alkyl halide. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, and metal-insulator-metal (MIM).

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Abstract: Methods and related systems of processing a substrate. Described methods comprise executing a plurality of deposition cycles to form a doped hafnium zirconium oxide layer on the substrate.

Abstract: Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.

Abstract: Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The heteroleptic gallium precursor may include (i) at least one straight chain alkyl group in which a terminal carbon is directly bonded to gallium, and (ii) at least one tertiary alkyl group in which a tertiary carbon is directly bonded to gallium. The method may include reacting the silicon precursor, the germanium precursor, the boron precursor, and the heteroleptic gallium precursor to form a silicon germanium layer on the substrate that is doped with boron and gallium.

Abstract: Methods and related systems for forming an EUV-sensitive layer. The methods comprise executing a plurality of deposition cycles. A deposition cycle comprises a first precursor pulse and a second precursor pulse. The first precursor pulse comprises exposing the substrate to a first precursor. The first precursor comprises two or more acyl halide functional groups. The second precursor pulse comprises exposing the substrate to a second precursor. In some embodiments, the second precursor comprises two or more hydroxyl functional groups.

Abstract: The current disclosure relates to vapor phase methods of depositing a metal or a semimetal-comprising materials on a substrate. In the methods, various metal or semimetal precursors may be used together with reactants that may generate hydrogen radical or amino radical to react with the metal or semimetal precursor to deposit the metal or semimetal-comprising material on the substrate. The disclosure further relates to materials and structures deposited by the disclosed methods, as well as deposition assemblies.