Patents by Inventor Charles Dornfest
Charles Dornfest has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20090065056Abstract: A “hybrid” photovoltaically active layer is homogenous (in a direction parallel to the major surfaces of the layer) with respect to film constituents, but is non-homogenous with respect to photovoltaic properties. First regions exhibit high absorptivity, while second regions that are perpendicular to the major surfaces of the layer exhibit a higher carrier mobility. The method for forming the layer includes one or all of chemical vapor deposition, the hollow cathode effect, and high power DC pulsing.Type: ApplicationFiled: September 12, 2008Publication date: March 12, 2009Applicant: Sub-One TechnologyInventors: Deepak Upadhayaya, William J. Boardman, Charles Dornfest
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Patent number: 6635114Abstract: The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces “flash” sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system.Type: GrantFiled: December 17, 1999Date of Patent: October 21, 2003Assignee: Applied Material, Inc.Inventors: Jun Zhao, Charles Dornfest, Frank Chang, Xiaoliang Jin, Po Tang
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Patent number: 6616767Abstract: The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.Type: GrantFiled: March 27, 1998Date of Patent: September 9, 2003Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Talex Sajoto, Charles Dornfest, Harold Mortensen, Richard Palicka
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Publication number: 20030051665Abstract: The present invention provides techniques for coupling radio-frequency (RF) power to a metal plate in a ceramic pedestal. Perforations in the metal plate allow ceramic-to-ceramic bonding through the metal plate. The power from an RF power feed is distributed to the perforated metal plate via several electrodes that are spaced away from the centerline of the RF power feed, thus splitting power distribution. A ceramic bonding disk between the metal plate and the RF power feed provides mechanical support for the metal plate and a ceramic body to bond to through the perforations, thus reducing cracking of the metal plate and the surrounding ceramic material.Type: ApplicationFiled: March 27, 1998Publication date: March 20, 2003Inventors: JUN ZHAO, TALEX SAJOTO, CHARLES DORNFEST, HAROLD MORTENSEN, RICHARD PALICKA
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Patent number: 6527865Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. In one aspect, an apparatus and process for the control of a gas flowed through a gas feedthrough in a substrate processing chamber and system is provided. In another aspect, a deposition chamber is provided for depositing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to a vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. The chamber comprises a series of heated temperature controlled internal liners, such as a heated gas feedthrough.Type: GrantFiled: June 16, 2000Date of Patent: March 4, 2003Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Charles Dornfest, Leonid Selyutin, Jun Zhao, Vincent Ku, Xiao Liang Jin
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Publication number: 20030033978Abstract: The present invention generally provides a deposition chamber for depositing materials which require vaporization, especially low volatility precursors, which are transported as a liquid to a vaporizer to be converted to vapor phase through one or more vaporizing elements and which must be transported at elevated temperatures to prevent unwanted condensation on chamber components. In one aspect, the chamber comprises a series of heated temperature controlled internal liners as vaporizing surfaces which are configured for rapid removal, cleaning and/or replacement and preferably are made of a material having a thermal coefficient of expansion close to that of the deposition material. The vaporizing surfaces “flash” sprayed liquid precursors on the surface of the vaporizing surfaces and then purify the flashed precursors before flowing further into the system.Type: ApplicationFiled: December 17, 1999Publication date: February 20, 2003Inventors: JUN ZHAO, CHARLES DORNFEST, FRANK CHANG, XIAOLIANG JIN, PO TANG
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Patent number: 6358810Abstract: The present invention provides a multi-layer semiconductor memory device comprising: a bottom electrode having a bottom layer, an upper interface layer and an intermediate tuning layer disposed between the bottom layer and the upper interface layer; a top electrode; and a high dielectric constant dielectric layer disposed between the bottom electrode and the top electrode. The present invention further provides an apparatus and a method for manufacturing high density DRAMs having capacitors having high quality HDC materials and low leakage currents. Another aspect of the present invention provides an electrode-dielectric interface that nucleates high quality HDC films. The present invention further provides an apparatus and a method for manufacturing capacitors within a high aspect ratio aperture.Type: GrantFiled: July 28, 1998Date of Patent: March 19, 2002Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, John Egermeier, Nitin Khurana
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Patent number: 6270859Abstract: A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.Type: GrantFiled: March 27, 1998Date of Patent: August 7, 2001Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek
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Patent number: 6258170Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: September 11, 1997Date of Patent: July 10, 2001Assignee: Applied Materials, Inc.Inventors: Sasson Somekh, Jun Zhao, Charles Dornfest, Talex Sajoto, Leonid Selyutin, Vincent Ku, Chris Wang, Frank Chang, Po Tang
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Publication number: 20010004478Abstract: A method of depositing titanium nitride by chemical vapor deposition in a chamber having several design features directed to the conductive nature of titanium nitride, particularly when a plasma treatment step is performed after the thermal deposition of the film. Preferably, during the post-deposition plasma treatment, RF power is applied only to the showerhead counter-electrode and none to the pedestal supporting the wafer, thereby preventing charging of the wafer.Type: ApplicationFiled: March 27, 1998Publication date: June 21, 2001Inventors: JUN ZHAO, ASHOK SINHA, AVI TEPMAN, MEI CHANG, LEE LUO, ALEX SCHREIBER, TALEX SAJOTO, STEFAN WOLFF, CHARLES DORNFEST, MICHAL DANEK
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Patent number: 6214160Abstract: An electrostatic technique for removing particulate matter from a semiconductor wafer in a plasma processing chamber, such as a plasma-enhanced chemical vapor deposition (PECVD) chamber. During a particulate removal phase of operation, a normally grounded electrode that supports the wafer is temporarily isolated from ground and a bias voltage generator is simultaneously connected to the electrode, supplying sufficient bias voltage to electrostatically launch particulates from the surface of the wafer. A plasma formed above the normally grounded electrode is maintained during the particulate removal phase, and particulates launched from the wafer become suspended in a sheath region surrounding the plasma, from where they can be later removed by a purging flow of gas. Preferably, the bias voltage generator provides a bias voltage that alternates in polarity, to ensure removal of both positively-charged and negatively charged particles from the wafer surface.Type: GrantFiled: May 7, 1998Date of Patent: April 10, 2001Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, Anand Gupta, Gerald Girard
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Patent number: 6210485Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the vaporization of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, for deposition on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules. The vaporizer comprises thermally controlled components which are adapted for easy assembly and disassembly. A main vaporizing section provides a large heated surface for flash vaporization. A high conductance blocker is disposed at a lower end of the vaporizer to provide an extended vaporization surface. Optionally, a filter may be employed to capture unvaporized precursor droplets.Type: GrantFiled: July 13, 1999Date of Patent: April 3, 2001Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Lee Luo, Xiaoliang Jin, Frank Chang, Charles Dornfest, Po Tang
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Patent number: 6165271Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: December 26, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Sasson Somekh, Talex Sajoto, Charles Dornfest, Leonid Selyutin
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Patent number: 6129044Abstract: The present invention provides an approach which provides an increase in the number of usable substrates with a film, such as titanium nitride, deposited thereon at a sufficient deposition rate and where the film meets uniformity and resistivity specifications as well as providing good step coverage. In accordance with an embodiment, the present invention provides an apparatus for substrate processing. The apparatus circulates a heat exchange medium through a passage in a chamber body of a vacuum chamber, and heats a heater pedestal having a surface for supporting the substrate to a heater temperature. The heat exchange medium has a heat exchange temperature of about 60.degree. C. or less. The the apparatus also flows a gas into the chamber at a flow rate to deposit a film on a substrate, where the flow rate provides an effective temperature of the substrate lower than the heater temperature and where the film meets uniformity and resistance specifications after deposition onto a number of substrates.Type: GrantFiled: October 6, 1999Date of Patent: October 10, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Ashok Sinha, Avi Tepman, Mei Chang, Lee Luo, Alex Schreiber, Talex Sajoto, Stefan Wolff, Charles Dornfest, Michal Danek
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Patent number: 6123773Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: September 26, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Leonid Selyutin, Charles Dornfest, Jun Zhao
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Patent number: 6099651Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: August 8, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Jun Zhao, Charles Dornfest, Leonid Selyutin
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Patent number: 6096134Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: August 1, 2000Assignee: Applied Materials, Inc.Inventors: Jun Zhao, Charles Dornfest, Vincent Ku, Frank Chang, Visweswaren Sivaramakrishnan
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Patent number: 6082714Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: July 4, 2000Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, Jun Zhao, Vincent Ku, Po Tang, Talex Sajoto, Frank Chang
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Patent number: 6077562Abstract: The invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate. Particularly contemplated is an apparatus and process for the deposition of a metal-oxide film, such as a barium, strontium, titanium oxide (BST) film, on a silicon wafer to make integrated circuit capacitors useful in high capacity dynamic memory modules.Type: GrantFiled: March 31, 1998Date of Patent: June 20, 2000Assignee: Applied Materials, Inc.Inventors: Charles Dornfest, Jun Zhao, Talex Sajoto, Lee Luo
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Patent number: 6066209Abstract: The invention relates to an apparatus and process for filtering deposition gases in a substrate processing system. Particularly contemplated is an apparatus and process for the filtering deposition gases of a metal-oxide film deposited on a silicon wafer to make integrated circuits. In one embodiment, the invention provides an apparatus for filtering a fluid in a semiconductor processing system, comprising a housing and a filtering member disposable in the housing, the filtering member comprising a base portion and a filtering portion having an inlet and an outlet and a plurality of temperature controlled fluid passages formed between the inlet and the outlet, the passages having a length longer than a width across the passages.Type: GrantFiled: March 31, 1998Date of Patent: May 23, 2000Assignee: Applied Materials, Inc.Inventors: Talex Sajoto, Jun Zhao, Vincent Ku, Charles Dornfest