Abstract: A method of removing bulk impurities from a semiconductor wafer is described comprising the steps of lapping the front and back surfaces of the wafer to remove 35 to 40 microns of material therefrom and to make the surfaces parallel, heating the wafer at a predetermined temperature preferably equal to or above the highest temperature to be used in subsequent device fabrication, etching the front and back surfaces of the wafer to remove 35 to 40 microns of material therefrom and thereafter polishing the front surface of the wafer for removing 20 microns of material therefrom. By means of the above process the number of surface defects caused by strain producing centers in the crystal lattice of the wafer is reduced from 500,000 defects per square centimeter to less than 1,000 defects per square centimeter.