Patents by Inventor Charles Hartger Winter

Charles Hartger Winter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11655262
    Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: May 23, 2023
    Inventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
  • Publication number: 20230046318
    Abstract: The present invention is in the field of processes for preparing inorganic metal- or semimetal-containing films. The process for preparing inorganic metal- or semimetal-containing films comprising (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (I) or (II) wherein Z is NR2, PR2, OR, SR, CR2, SiR2, X is H, R? or NR?2, wherein at least one X is H, n is 1 or 2, and R and R? is an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Application
    Filed: November 16, 2020
    Publication date: February 16, 2023
    Inventors: Sinja Verena KLENK, Alexander Georg HUFNNAGEL, Hagen WILMER, Daniel LĂ–FFLER, Sabine WEIGUNY, Kerstin SCHIERLE-ARNDT, Charles Hartger WINTER, Nilanka WEERATHUNGA SIRIKKATHUGE
  • Patent number: 11505562
    Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.
    Type: Grant
    Filed: November 9, 2018
    Date of Patent: November 22, 2022
    Assignees: BASF SE, Wayne State University
    Inventors: Lukas Mayr, David Dominique Schweinfurth, Daniel Waldmann, Charles Hartger Winter, Kyle Blakeney, Sinja Verena Klenk, Sabine Weiguny, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
  • Publication number: 20220220131
    Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Application
    Filed: March 31, 2022
    Publication date: July 14, 2022
    Inventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
  • Patent number: 11377454
    Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: July 5, 2022
    Assignees: BASF SE, Wayne State University
    Inventors: Charles Hartger Winter, Kyle Blakeney, Lukas Mayr, David Dominique Schweinfurth, Sabine Weiguny, Daniel Waldmann
  • Patent number: 11319332
    Abstract: A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: May 3, 2022
    Assignees: BASF SE, Wayne State University
    Inventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
  • Publication number: 20210079025
    Abstract: Described herein is a process for preparing inorganic metal-containing films including bringing a solid substrate in contact with a compound of general formula (I) or (II) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 1, 2 or 3, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group, wherein if n is 2 and E is NR or A is OR, at least one R in NR or OR bears no hydrogen atom in the 1-position.
    Type: Application
    Filed: November 9, 2018
    Publication date: March 18, 2021
    Inventors: Lukas Mayr, David Dominique Schweinfurth, Daniel Waldmann, Charles Hartger Winter, Kyle Blakeney, Sinja Verena Klenk, Sabine Weiguny, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
  • Publication number: 20210079520
    Abstract: Described herein is a process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous state where A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or 2, and R? is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Application
    Filed: September 17, 2018
    Publication date: March 18, 2021
    Applicant: Wayne State University
    Inventors: David Dominique Schweinfurth, Lukas Mayr, Sinja Verena Klenk, Sabine Weiguny, Charles Hartger Winter, Kyle Blakeney, Nilanka Weerathunga Sirikkathuge, Tharindu Malawara Arachchige Nimanthaka Karunaratne
  • Publication number: 20210024549
    Abstract: The present disclosure is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. Described herein is a process for preparing metal-containing films including: (a) depositing a metal-containing compound from the gaseous state onto a solid substrate, and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a compound of general formula (I) wherein Z is a C2-C4 alkylene group, and R is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.
    Type: Application
    Filed: April 10, 2019
    Publication date: January 28, 2021
    Inventors: Charles Hartger Winter, Kyle Blakeney, Lukas Mayr, David Dominique Schweinfurth, Sabine Weiguny, Daniel Waldmann