Patents by Inventor Charles Masamed Marcus

Charles Masamed Marcus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11211543
    Abstract: A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: December 28, 2021
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles Masamed Marcus, Michael James Manfra
  • Publication number: 20210175408
    Abstract: A method of fabricating a semiconductor-superconductor hybrid device comprises providing a workpiece comprising a semiconductor component, a layer of a first superconductor material on the semiconductor component, and a layer of a second superconductor material on the first superconductor material, the second superconductor material being different from the first superconductor material; etching the layer of the second superconductor material to expose a portion of the first superconductor material; and oxidising the portion of the first superconductor material to form a passivating layer on the semiconductor. The first superconductor provides energy coupling between the semiconductor and the second superconductor, and the passivating layer protects the semiconductor while allowing electrostatic access thereto. Also provided are a hybrid device, and a method of etching.
    Type: Application
    Filed: February 20, 2020
    Publication date: June 10, 2021
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Geoffrey Charles Gardner, Asbjørn Cennet Cliff Drachmann, Charles Masamed Marcus, Michael James Manfra
  • Patent number: 10692010
    Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: June 23, 2020
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Michael Hartley Freedman, Bernard van Heck, Georg Wolfgang Winkler, Torsten Karzig, Roman Lutchyn, Peter Krogstrup Jeppesen, Chetan Nayak, Charles Masamed Marcus, Saulius Vaitiekenas
  • Patent number: 10665701
    Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.
    Type: Grant
    Filed: September 3, 2018
    Date of Patent: May 26, 2020
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Michael Hartley Freedman, Bernard van Heck, Georg Wolfgang Winkler, Torsten Karzig, Roman Lutchyn, Peter Krogstrup Jeppesen, Chetan Nayak, Charles Masamed Marcus, Saulius Vaitiekėnas
  • Publication number: 20200027030
    Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.
    Type: Application
    Filed: September 3, 2018
    Publication date: January 23, 2020
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Michael Hartley Freedman, Bernard van Heck, Georg Wolfgang Winkler, Torsten Karzig, Roman Lutchyn, Peter Krogstrup Jeppesen, Chetan Nayak, Charles Masamed Marcus, Saulius Vaitiekenas
  • Publication number: 20200027971
    Abstract: The disclosure relates to a quantum device and method of fabricating the same. The device comprises one or more semiconductor-superconductor nanowires, each comprising a length of semiconductor material and a coating of superconductor material coated on the semiconductor material. The nanowires may be formed over a substrate. In a first aspect at least some of the nanowires are full-shell nanowires with superconductor material being coated around a full perimeter of the semiconductor material along some or all of the length of the wire, wherein the device is operable to induce at least one Majorana zero mode, MZM, in one or more active ones of the full-shell nanowires. In a second aspect at least some of the nanowires are arranged vertically relative to the plane of the substrate in the finished device.
    Type: Application
    Filed: September 3, 2018
    Publication date: January 23, 2020
    Applicant: Microsoft Technology Licensing, LLC
    Inventors: Michael Hartley Freedman, Bernard van Heck, Georg Wolfgang Winkler, Torsten Karzig, Roman Lutchyn, Peter Krogstrup Jeppesen, Chetan Nayak, Charles Masamed Marcus, Saulius Vaitiekenas