Abstract: A memory page management method is provided. The method includes receiving a state-change notification corresponding to a state-change page, and grouping the state-change page from a list to which the state-change page belongs into a keep list or an adaptive LRU list of an adaptive adjusting list according to the state-change notification; receiving an access command from a CPU to perform an access operation to target page data corresponding to a target page; determining that a cache hit state is a hit state or a miss state according to a target NVM page address corresponding to the target page, and grouping the target page into the adaptive LRU list according to the cache hit state; and searching the adaptive page list according to the target NVM page address to obtain a target DRAM page address to complete the access command corresponding to the target page data.

Abstract: The present disclosure provides a memory system, a method of operating memory, and a non-transitory computer readable storage medium. The memory system includes a memory chip and a controller. The controller is coupled with the memory chip, which the controller is configured to: receive a first data corresponding to a first version from a file system in order to store the first data corresponding to the first version in a first page of the flash memory chip; and program the first data corresponding to a second version in the first page in response to the first data of the second version, which the second version is newer than the first version.

Abstract: The present disclosure provides a memory system, a method of operating memory, and a non-transitory computer readable storage medium. The memory system includes a memory chip and a controller. The controller is coupled with the memory chip, which the controller is configured to: receive a first data corresponding to a first version from a file system in order to store the first data corresponding to the first version in a first page of the flash memory chip; and program the first data corresponding to a second version in the first page in response to the first data of the second version, which the second version is newer than the first version.

Abstract: A memory page management method is provided. The method includes receiving a state-change notification corresponding to a state-change page, and grouping the state-change page from a list to which the state-change page belongs into a keep list or an adaptive LRU list of an adaptive adjusting list according to the state-change notification; receiving an access command from a CPU to perform an access operation to target page data corresponding to a target page; determining that a cache hit state is a hit state or a miss state according to a target NVM page address corresponding to the target page, and grouping the target page into the adaptive LRU list according to the cache hit state; and searching the adaptive page list according to the target NVM page address to obtain a target DRAM page address to complete the access command corresponding to the target page data.

Abstract: A memory controlling method, a memory controlling circuit and a memory system are provided. A memory includes a plurality of memory chips. The memory controlling method includes the following steps: The memory chips are grouped into at least two partner groups by a grouping unit. A quantity of the memory chips in each of the partner groups is at least two. At least one of the memory chips in each of the partner groups is required to serve a reading request or a writing request by a processing unit.