Patents by Inventor Che-Yueh Kuo

Che-Yueh Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220075714
    Abstract: A data merge method for a rewritable non-volatile memory module including a plurality of physical units is provided. The method includes: selecting at least one first physical unit and at least one second physical unit from the physical units; reading first mapping information from the rewritable non-volatile memory module, and the first mapping information includes mapping information of the first physical unit and mapping information of the second physical unit; copying valid data collected from the first physical unit and valid data collected from the second physical unit to at least one third physical unit of the physical units according to the first mapping information; and when a data volume of valid data copied from the second physical unit to the third physical unit reaches a data volume threshold, stopping collecting valid data from the second physical unit, and continuing collecting valid data from the first physical unit.
    Type: Application
    Filed: September 25, 2020
    Publication date: March 10, 2022
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Ching-Yu Pan
  • Patent number: 11249898
    Abstract: A data merge method for a rewritable non-volatile memory module including a plurality of physical units is provided. The method includes: selecting at least one first physical unit and at least one second physical unit from the physical units; reading first mapping information from the rewritable non-volatile memory module, and the first mapping information includes mapping information of the first physical unit and mapping information of the second physical unit; copying valid data collected from the first physical unit and valid data collected from the second physical unit to at least one third physical unit of the physical units according to the first mapping information; and when a data volume of valid data copied from the second physical unit to the third physical unit reaches a data volume threshold, stopping collecting valid data from the second physical unit, and continuing collecting valid data from the first physical unit.
    Type: Grant
    Filed: September 25, 2020
    Date of Patent: February 15, 2022
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Ching-Yu Pan
  • Publication number: 20210397375
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: collecting valid data from a source unit; copying a first logical to physical mapping table corresponding to the source unit to generate a second logical to physical mapping table; updating the second logical to physical mapping table according to a physical address of a recycling unit expected to be written, and the second logical to physical mapping table is recorded with mapping information corresponding to the recycling unit; copying the valid data from the source unit into the recycling unit; and updating first management information according to the second logical to physical mapping table.
    Type: Application
    Filed: August 10, 2020
    Publication date: December 23, 2021
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Li Hsun Lien
  • Patent number: 11163694
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: November 2, 2021
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Ding-Yuan Chen
  • Patent number: 11144245
    Abstract: A memory control method is disclosed. The method includes: determining a mode for reading first data in a first management unit as a first mode or a second mode according to a data dispersion degree of the first data; reading the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode; and reading the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode. Furthermore, a memory storage device and a memory control circuit unit are also disclosed.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: October 12, 2021
    Assignee: PHISON ELECTRONICS CORP.
    Inventor: Che-Yueh Kuo
  • Patent number: 11036429
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.
    Type: Grant
    Filed: June 4, 2019
    Date of Patent: June 15, 2021
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Wei-Jeng Wang
  • Publication number: 20210064284
    Abstract: A memory control method is disclosed. The method includes: determining a mode for reading first data in a first management unit as a first mode or a second mode according to a data dispersion degree of the first data; reading the first data from the first management unit according to a physical distribution of the first data if the mode for reading the first data is determined as the first mode; and reading the first data from the first management unit according to a logical distribution of the first data if the mode for reading the first data is determined as the second mode. Furthermore, a memory storage device and a memory control circuit unit are also disclosed.
    Type: Application
    Filed: October 23, 2019
    Publication date: March 4, 2021
    Applicant: PHISON ELECTRONICS CORP.
    Inventor: Che-Yueh Kuo
  • Publication number: 20200319822
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The memory control method includes: determining a first management unit as a source block and reading valid data from a first continuous data unit in the first management unit according to first interleaving information and second interleaving information, wherein the first interleaving information reflects a total number of the first continuous data units in the first management unit, and the second interleaving information reflects a total number of second continuous data units in a second management unit; storing the valid data into a recycling block; and erasing the first management unit.
    Type: Application
    Filed: June 4, 2019
    Publication date: October 8, 2020
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Wei-Jeng Wang
  • Publication number: 20200301851
    Abstract: A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: maintaining first management information for identifying a first management unit in the rewritable non-volatile memory module; collecting first valid data from the first management unit according to the first management information without reading first mapping information from the rewritable non-volatile memory module in a data merge operation, and the first mapping information includes logical-to-physical mapping information related to the first valid data; and storing the collected first valid data into a recycling unit.
    Type: Application
    Filed: May 16, 2019
    Publication date: September 24, 2020
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Ding-Yuan Chen
  • Patent number: 10545700
    Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.
    Type: Grant
    Filed: June 11, 2018
    Date of Patent: January 28, 2020
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Wen-Jin Li
  • Publication number: 20190317694
    Abstract: A memory management method for a memory storage device including a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: performing a data merge operation for at least one physical unit of the rewritable non-volatile memory module according to a write command from a host system; and adjusting times of performing the data merge operation according to a dispersion rate of a plurality of logical units corresponding to first data stored in at least one first-type physical unit of the rewritable non-volatile memory module.
    Type: Application
    Filed: June 11, 2018
    Publication date: October 17, 2019
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Che-Yueh Kuo, Wen-Jin Li
  • Patent number: 10310739
    Abstract: A memory management method is provided according to an exemplary embodiment of the disclosure. The method includes: obtaining a valid data parameter based on a valid data amount of valid data stored in a plurality of physical erasing units, and obtaining a first threshold value based on the valid data parameter. The method also includes: obtaining a first determination parameter based on a number of a plurality of first physical erasing units, and the first physical erasing units are physical erasing units being programmed for storing data by using a single-page programming mode. The method further includes: performing a garbage collection operation if the first determination parameter is greater than the first threshold value.
    Type: Grant
    Filed: August 30, 2017
    Date of Patent: June 4, 2019
    Assignee: PHISON ELECTRONICS CORP.
    Inventors: Chien-Wen Chen, Che-Yueh Kuo
  • Publication number: 20190012080
    Abstract: A memory management method is provided according to an exemplary embodiment of the disclosure. The method includes: obtaining a valid data parameter based on a valid data amount of valid data stored in a plurality of physical erasing units, and obtaining a first threshold value based on the valid data parameter. The method also includes: obtaining a first determination parameter based on a number of a plurality of first physical erasing units, and the first physical erasing units are physical erasing units being programmed for storing data by using a single-page programming mode. The method further includes: performing a garbage collection operation if the first determination parameter is greater than the first threshold value.
    Type: Application
    Filed: August 30, 2017
    Publication date: January 10, 2019
    Applicant: PHISON ELECTRONICS CORP.
    Inventors: Chien-Wen Chen, Che-Yueh Kuo