Patents by Inventor Chen-Chung Du

Chen-Chung Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10948315
    Abstract: A magnetic position detecting device and a method for detecting a magnetic position are provided. An induced voltage is generated by changing a position between a pattern of an inductive ruler and an alternating magnetic field of an exciting element. A position of the exciting element is resolved by a technical means of voltage resolution for positions.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: March 16, 2021
    Assignee: Industrial Technology Research Institute
    Inventors: Yu-Ming Wang, Chen-Chung Du, Brian Luan Chen, Jen-Yuan Chang, Jwu-Sheng Hu
  • Publication number: 20200200568
    Abstract: A magnetic position detecting device and a method for detecting a magnetic position are provided. An induced voltage is generated by changing a position between a pattern of an inductive ruler and an alternating magnetic field of an exciting element. A position of the exciting element is resolved by a technical means of voltage resolution for positions.
    Type: Application
    Filed: December 21, 2018
    Publication date: June 25, 2020
    Inventors: Yu-Ming Wang, Chen-Chung Du, Brian Luan Chen, Jen-Yuan Chang, Jwu-Sheng Hu
  • Patent number: 9363881
    Abstract: A plasma device includes a dielectric barrier, a first electrode structure, a second electrode structure, and a third electrode structure. The dielectric barrier has an upstream terminal and a downstream terminal and defines a space, in which the first electrode structure is disposed. A gap with multiple widths is formed between the first electrode structure and the dielectric barrier. The dielectric barrier is located between the first electrode structure and the second electrode structure. The second electrode structure includes electrode blocks sequentially arranged from the upstream terminal to the downstream terminal. The dielectric barrier, the first electrode structure, and the second electrode structure are located on the same side of the third electrode structure located at the downstream terminal. A minimum distance between the electrode blocks and the third electrode structure is not less than a distance between the first electrode structure and the third electrode structure.
    Type: Grant
    Filed: November 19, 2014
    Date of Patent: June 7, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Chih-Chiang Weng, Jui-Mei Hsu, Chen-Chung Du, Chen-Der Tsai
  • Patent number: 9313873
    Abstract: A modular electrode device comprises a plurality of main bodies, a first electrode, at least one second electrode, at least one first connecting member and two second connecting members. Each main body has a side edge, an internal chamber and a gas inlet communicative in space between the chamber and the atmosphere. The first electrode is mounted at the side edge of one main body, while the in-serial second electrodes connected to one end of the first electrode are mounted at the side edges of the other main bodies. The main bodies are separated by the parallel third electrodes. The third, the second and the third electrodes are connected to each other. The first connecting member bridges in-serially the first electrode and the neighboring second electrode. The second connecting members are applied to both opposing end of the in-serial combination of the first and the second electrodes.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: April 12, 2016
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Kuo-Hui Yang, Chen-Der Tsai, Ying-Fang Chang, Chen-Chung Du, Chih-Chiang Weng
  • Publication number: 20150156857
    Abstract: A plasma device includes a dielectric barrier, a first electrode structure, a second electrode structure, and a third electrode structure. The dielectric barrier has an upstream terminal and a downstream terminal and defines a space, in which the first electrode structure is disposed. A gap with multiple widths is formed between the first electrode structure and the dielectric barrier. The dielectric barrier is located between the first electrode structure and the second electrode structure. The second electrode structure includes electrode blocks sequentially arranged from the upstream terminal to the downstream terminal. The dielectric barrier, the first electrode structure, and the second electrode structure are located on the same side of the third electrode structure located at the downstream terminal. A minimum distance between the electrode blocks and the third electrode structure is not less than a distance between the first electrode structure and the third electrode structure.
    Type: Application
    Filed: November 19, 2014
    Publication date: June 4, 2015
    Inventors: Chih-Chiang Weng, Jui-Mei Hsu, Chen-Chung Du, Chen-Der Tsai
  • Publication number: 20140144377
    Abstract: A substrate and mask attachment clamp device comprising a push assembly, an upper clamp mechanism and a lower clamp mechanism is disclosed. The upper clamp mechanism comprises a first inclined surface, a swing element, a second inclined surface and a sliding surface. The lower clamp mechanism comprises a lower clamp retainer and a clamp movably. During the push assembly moving along a first direction, the push assembly moves with respect to the first inclined surface to drive the upper clamp mechanism to move along a second direction. The push assembly further drives the second inclined surface to move with respect to the swing element, so that the swing element drives the clamp to move along a third direction opposite to the first direction, and drives the sliding surface to move with respect to the lower clamp mechanism to drive the clamp to move along a fourth direction.
    Type: Application
    Filed: April 29, 2013
    Publication date: May 29, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Muh-Wang Liang, Yuan-Yuan Chiang
  • Patent number: 8435803
    Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.
    Type: Grant
    Filed: April 12, 2010
    Date of Patent: May 7, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chung Du, Sheng-Lang Lee, Muh-Wang Liang, Jen-Rong Huang, Chia-Hao Chang
  • Publication number: 20120240855
    Abstract: The deposition apparatus has a plurality of said transmission mechanisms arranged therein in a symmetrical manner. Each transmission mechanism comprises: a drive shaft, formed with a tapered end; a driving wheel, configured with a shaft hole for the tapered end to bore coaxially therethrough; a plurality of slide pieces, radially mounted to the driving wheel; a first elastic member, mounted enabling the plural slide pieces to be ensheathed thereby; a second elastic member, disposed between the first elastic member and the first axial end of the drive shaft while being mounted to the periphery of the driving wheel; an enclosure, configured with an opening; wherein, the driving wheel that is moving in a reciprocating manner drives the sliding pieces to slide in radial directions, thereby, causing the outer diameter of the first elastic member to change accordingly and enabling the opening of the enclosure to open or close in consequence.
    Type: Application
    Filed: July 6, 2011
    Publication date: September 27, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Ming-Tung Chiang, Muh-Wang Liang, Kuan-Chou Chen, Tean-Mu Shen, Jung-Chen Ho
  • Publication number: 20120111269
    Abstract: A view port device for a plasma process and a process observation device of a plasma apparatus are provided. The view port device for a plasma process comprises a first substrate portion, a second substrate portion, and a connecting portion. The first substrate portion has a first through hole. The second substrate portion has a second through hole and a second diffusion space. A cross-sectional area of the second diffusion space is larger than that of the second through hole. The connecting portion is disposed between the first substrate portion and the second substrate portion.
    Type: Application
    Filed: January 19, 2011
    Publication date: May 10, 2012
    Inventors: Chen-Chung DU, Muh-Wang Liang, Guan-Yu Lin, Ta-Chin Wei
  • Publication number: 20110136269
    Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.
    Type: Application
    Filed: April 12, 2010
    Publication date: June 9, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Sheng-Lang Lee, Muh-Wang Liang, Jen-Rong Huang, Chia-Hao Chang
  • Patent number: 7721673
    Abstract: The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode electrode and the hollow cathode electrode are formed with anode openings and cathode openings respectively. Defined by the gas distribution pipe and the hollow cathode electrode and along the axis thereof is a spiral pathway winding through the cathode openings, so as to form a plurality of continuous and communicated reaction chambers. The gas distribution pipe is disposed with gas separation apertures communicated and adapted to introduce a reactive gas into the reaction chambers. The communicated reaction chambers enable uniform distribution of the reactive gas and thereby facilitate scale-up of the apparatus in axial. Accordingly, the present invention overcomes drawbacks of the prior art.
    Type: Grant
    Filed: January 31, 2007
    Date of Patent: May 25, 2010
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chung Du, Ming-Tung Chiang, Fu-Ching Tung, Chin-Feng Cheng, Tean-Mu Shen
  • Publication number: 20100116623
    Abstract: A transmission device for thin and brittleness substrate is disclosed, which comprises: a plurality of transportation rollers and a plurality of pinch rollers. Each transportation roller further comprises: a rigid spindle; and a plurality of elastic supporting wheels, mounted on the spindle. Each pinch roller comprises: a sleeve; a spindle, ensheathed in the sleeve; and a plurality of pressing wheels, mounted on the sleeve at positions corresponding to the supporting wheels. When the transportation rollers are driven to rotate, a substrate sandwiched between the supporting wheels and the pressing wheels will be push to move while subjecting to a friction originated from a sufficient holding force by the supporting wheels and the pressing wheels, and consequently, providing an improved buffering capability for deformation absorption that enables the transmission device to guide the thin substrate to move smoothly without causing buckling or scratching to the thin substrate.
    Type: Application
    Filed: April 8, 2009
    Publication date: May 13, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chen-Chung Du, Kang-Feng Lee, Muh-Wang Liang, Chan-Hsing Lo, Tung-Chuan Wu
  • Publication number: 20090283042
    Abstract: A susceptor positioning and supporting device of a vacuum apparatus for carrying and elevating a substrate in a vacuum apparatus chamber is provided. The device has a lateral positioning and supporting mechanism to perform clamping and positioning at a side of a susceptor, preventing the susceptor from slanting inside the vacuum apparatus chamber. The lateral positioning and supporting mechanism and the susceptor thereby forms a closed beam support mechanism capable of reducing load suspension deformation at the ends of the large susceptor. The device improves planarity of the large susceptor and the substrate, and in turn improves uniformity of a thin film deposited on the substrate.
    Type: Application
    Filed: August 19, 2008
    Publication date: November 19, 2009
    Inventors: Chen-Chung DU, Muh-Wang Liang, Ching-Huei Wu, Ming-Tung Chiang
  • Publication number: 20090090616
    Abstract: A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.
    Type: Application
    Filed: January 17, 2008
    Publication date: April 9, 2009
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: CHEN-CHUNG DU, JEN-RONG HUANG, MUH-WANG LIANG, CHIH-CHEN CHANG, SHENG-LANG LEE, CHING-HUEI WU, CHAN-HSING LO
  • Patent number: 7449091
    Abstract: A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
    Type: Grant
    Filed: March 8, 2005
    Date of Patent: November 11, 2008
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chung Du, Jen-Rong Huang, Pang-Ming Chiang, Chih-Yuan Tseng, Muh-Wang Liang, Chih-Cheng Wang, Yi-Chao Weng
  • Publication number: 20080106202
    Abstract: The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode electrode and the hollow cathode electrode are formed with anode openings and cathode openings respectively. Defined by the gas distribution pipe and the hollow cathode electrode and along the axis thereof is a spiral pathway winding through the cathode openings, so as to form a plurality of continuous and communicated reaction chambers. The gas distribution pipe is disposed with gas separation apertures communicated and adapted to introduce a reactive gas into the reaction chambers. The communicated reaction chambers enable uniform distribution of the reactive gas and thereby facilitate scale-up of the apparatus in axial. Accordingly, the present invention overcomes drawbacks of the prior art.
    Type: Application
    Filed: January 31, 2007
    Publication date: May 8, 2008
    Inventors: Chen-Chung Du, Ming-Tung Chiang, Fu-Ching Tung, Chin-Feng Cheng, Tean-Mu Shen
  • Publication number: 20060137974
    Abstract: A wafer electroplating apparatus with a function of bubble removal includes an electroplating bath main body and a fixing device. The electroplating bath main body has an inlet device, a first de-bubble tank and at least an air hole. The fixing device has a second de-bubble tank and an outer shell. The air hole guides gathering bubbles to an outside of the electroplating bath main body so as to remove bubbles. The fixing device can be put into the first de-bubble tank within the electroplating bath main body to form a de-bubble area and is separated easily therefrom to clean the wafer electroplating apparatus. The electroplating bath main body further includes a baffle for rectifying electroplating solution flow before entering the inlet device.
    Type: Application
    Filed: March 8, 2005
    Publication date: June 29, 2006
    Inventors: Chen-Chung Du, Jen-Rong Huang, Pang-Ming Chiang, Chih-Yuan Tseng, Muh-Wang Liang, Chih-Cheng Wang, Yi-Chao Weng
  • Patent number: 7021208
    Abstract: The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device.
    Type: Grant
    Filed: January 27, 2004
    Date of Patent: April 4, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Chen-Chung Du, Pang-Ming Chiang, Jen-Rong Huang, Muh-Wang Liang, Yi-Chao Weng
  • Publication number: 20050051023
    Abstract: The present invention relates to a compress and position apparatus with positioning, orientating functions and providing more uniform pressing force compliantly. The compress and position apparatus comprises a guiding column, a base, a housing, a seat, a annular portion and a pressing plate. The base has a cylinder, a plurality of locating pins and a convex portion. The annular portion has a through hole and a plurality of locating holes. The guiding column and the cylinder are disposed in the housing provided with an opening for the guiding column passing therethrough. The housing is mounted on the base and passed through a through hole of the annular portion and disposed in a cavity of the seat. A plane on the housing abuts a plane on the cavity to prevent the rotation of the housing. The guiding column is combined with the seat. The locating pin is inserted into the locating hole. The pressing plate engages the annular portion. Thus the guiding column is moved up and down by the gas supply device.
    Type: Application
    Filed: January 27, 2004
    Publication date: March 10, 2005
    Inventors: Chen-Chung Du, Pang-Ming Chiang, Jen-Rong Huang, Muh-Wang Liang, Yi-Chao Weng
  • Publication number: 20040124090
    Abstract: A wafer electroplating apparatus and method, comprising a wafer turning assembly, a vertical movement assembly, a wafer tilting assembly, and a frame. The wafer turning assembly has a turning shaft and a clasp for holding a wafer. The wafer tilting assembly has a tilting table being driven by a driving system, e.g. a cylinder, carrying an electroplating unit and wafer turning assembly. Thus the clasp holding a wafer and the electroplating unit are simultaneously inclined at preset angle against the horizontal plane, allowing for a large inclination angle. Therefore, gas bubbles generated during electroplating readily escape, and quality of electroplating is improved.
    Type: Application
    Filed: December 30, 2002
    Publication date: July 1, 2004
    Inventors: Chen-Chung Du, Pang-Min Chiang, Chih-Cheng Wang, Jen-Rong Huang