Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 33% to 42%.

Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion used for connecting an optical element, a fixed portion, and a driving assembly used for driving the movable portion to move relative to the fixed portion. The movable portion is movable relative to the fixed portion.

Abstract: A chip package structure includes a wiring board, a first chip, a second chip, a thermally conductive material, a molding compound and a heat dissipation part. The wiring board includes a plurality of circuit pads. The first chip is mounted on the wiring board and is electrically connected to at least one of the circuit pads. The first chip is located between the second chip and the wiring board. The thermally conductive material is located on the wiring board and penetrates the second chip and the first chip to extend to the wiring board. The molding compound is disposed on the wiring board, and the heat dissipation part is disposed on the molding material and thermally coupled to the thermally conductive material.

Abstract: A chip package structure includes a wiring board, a first chip, a second chip, a thermally conductive material, a molding compound and a heat dissipation part. The wiring board includes a plurality of circuit pads. The first chip is mounted on the wiring board and is electrically connected to at least one of the circuit pads. The first chip is located between the second chip and the wiring board. The thermally conductive material is located on the wiring board and penetrates the second chip and the first chip to extend to the wiring board. The molding compound is disposed on the wiring board, and the heat dissipation part is disposed on the molding material and thermally coupled to the thermally conductive material.