Patents by Inventor Chen-Huang HUANG

Chen-Huang HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220246843
    Abstract: Some embodiments relate to a semiconductor structure having a magnetic tunnel junction (MTJ) on a substrate and a top electrode on the MTJ. A first segment of a top surface of the top electrode adjacent to a first sidewall of the top electrode is different from a second segment of the top surface of the top electrode adjacent to a second sidewall of the top electrode. A sidewall spacer comprises a first spacer on the first sidewall of the top electrode and a second spacer on the second sidewall of the top electrode. A first surface of the first spacer comprises a first curve and a second surface of the second spacer comprises a second curve. A dielectric layer is around the MTJ and top electrode.
    Type: Application
    Filed: April 21, 2022
    Publication date: August 4, 2022
    Inventors: Harry-Hak-Lay Chuang, Chen-Pin Hsu, Hung Cho Wang, Wen-Chun You, Sheng-Chang Chen, Tsun Chung Tu, Jiunyu Tsai, Sheng-Huang Huang
  • Publication number: 20220209023
    Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.
    Type: Application
    Filed: March 21, 2022
    Publication date: June 30, 2022
    Inventors: Cheng-Chung Chang, Hsiu-Hao Tsao, Ming-Jhe Sie, Shun-Hui Yang, Chen-Huang Huang, An Chyi Wei, Ryan Chia-Jen Chen
  • Patent number: 11355616
    Abstract: A method includes forming an opening in a first dielectric layer. A region underlying the first dielectric layer is exposed to the opening. The method further includes depositing a dummy silicon layer extending into the opening, and depositing an isolation layer. The isolation layer and the dummy layer include a dummy silicon ring and an isolation ring, respectively, in the opening. The opening is filled with a metallic region, and the metal region is encircled by the isolation ring. The dummy silicon layer is etched to form an air spacer. A second dielectric layer is formed to seal the air spacer.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: June 7, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Huang Huang, Ming-Jhe Sie, Yih-Ann Lin, An Chyi Wei, Ryan Chia-Jen Chen
  • Patent number: 11349014
    Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.
    Type: Grant
    Filed: June 30, 2020
    Date of Patent: May 31, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
  • Patent number: 11329140
    Abstract: A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.
    Type: Grant
    Filed: January 17, 2020
    Date of Patent: May 10, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Huang Huang, Ming-Jhe Sie, Cheng-Chung Chang, Shao-Hua Hsu, Shu-Uei Jang, An Chyi Wei, Shiang-Bau Wang, Ryan Chia-Jen Chen
  • Patent number: 11282967
    Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.
    Type: Grant
    Filed: May 14, 2020
    Date of Patent: March 22, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Chung Chang, Hsiu-Hao Tsao, Ming-Jhe Sie, Shun-Hui Yang, Chen-Huang Huang, An Chyi Wei, Ryan Chia-Jen Chen
  • Publication number: 20210408266
    Abstract: In an embodiment, a method of forming a semiconductor device includes forming a dummy gate stack over a substrate; forming a first spacer layer over the dummy gate stack; oxidizing a surface of the first spacer layer to form a sacrificial liner; forming one or more second spacer layers over the sacrificial liner; forming a third spacer layer over the one or more second spacer layers; forming an inter-layer dielectric (ILD) layer over the third spacer layer; etching at least a portion of the one or more second spacer layers to form an air gap, the air gap being interposed between the third spacer layer and the first spacer layer; and forming a refill layer to fill an upper portion of the air gap.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 30, 2021
    Inventors: Ming-Jhe Sie, Chen-Huang Huang, Shao-Hua Hsu, Cheng-Chung Chang, Szu-Ping Lee, An Chyi Wei, Shiang-Bau Wang, Chia-Jen Chen
  • Publication number: 20210351084
    Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.
    Type: Application
    Filed: July 19, 2021
    Publication date: November 11, 2021
    Inventors: Shiang-Bau Wang, Li-Wei Yin, Chen-Huang Huang, Ming-Jhe Sie, Ryan Chia-Jen Chen
  • Publication number: 20210226033
    Abstract: A method of forming a gas spacer in a semiconductor device and a semiconductor device including the same are disclosed. In accordance with an embodiment, a method includes forming a gate stack over a substrate; forming a first gate spacer on sidewalls of the gate stack; forming a second gate spacer on sidewalls of the first gate spacer; removing the second gate spacer using an etching process to form a first opening, the etching process being performed at a temperature less than 0° C., the etching process using an etching solution including hydrogen fluoride; and depositing a dielectric layer over the first gate spacer and the gate stack, the dielectric layer sealing a gas spacer in the first opening.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 22, 2021
    Inventors: Chen-Huang Huang, Ming-Jhe Sie, Cheng-Chung Chang, Shao-Hua Hsu, Shu-Uei Jang, An Chyi Wei, Shiang-Bau Wang, Ryan Chia-Jen Chen
  • Patent number: 11069579
    Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: July 20, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiang-Bau Wang, Li-Wei Yin, Chen-Huang Huang, Ming-Jhe Sie, Ryan Chia-Jen Chen
  • Publication number: 20210202756
    Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.
    Type: Application
    Filed: May 14, 2020
    Publication date: July 1, 2021
    Inventors: Cheng-Chung Chang, Hsiu-Hao Tsao, Ming-Jhe Sie, Shun-Hui Yang, Chen-Huang Huang, An Chyi Wei, Ryan Chia-Jen Chen
  • Publication number: 20210134973
    Abstract: A method includes forming an opening in a first dielectric layer. A region underlying the first dielectric layer is exposed to the opening. The method further includes depositing a dummy silicon layer extending into the opening, and depositing an isolation layer. The isolation layer and the dummy layer include a dummy silicon ring and an isolation ring, respectively, in the opening. The opening is filled with a metallic region, and the metal region is encircled by the isolation ring. The dummy silicon layer is etched to form an air spacer. A second dielectric layer is formed to seal the air spacer.
    Type: Application
    Filed: March 2, 2020
    Publication date: May 6, 2021
    Inventors: Chen-Huang Huang, Ming-Jhe Sie, Yih-Ann Lin, An Chyi Wei, Ryan Chia-Jen Chen
  • Publication number: 20210090958
    Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.
    Type: Application
    Filed: December 7, 2020
    Publication date: March 25, 2021
    Inventors: Shu-Uei Jang, Chen-Huang Huang, Ryan Chia-Jen Chen, Shiang-Bau Wang, Shu-Yuan Ku
  • Patent number: 10861746
    Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shu-Uei Jang, Chen-Huang Huang, Ryan Chia-Jen Chen, Shiang-Bau Wang, Shu-Yuan Ku
  • Publication number: 20200176318
    Abstract: A conductive gate over a semiconductor fin is cut into a first conductive gate and a second conductive gate. An oxide is removed from sidewalls of the first conductive gate and a dielectric material is applied to the sidewalls. Spacers adjacent to the conductive gate are removed to form voids, and the voids are capped with a dielectric material to form air spacers.
    Type: Application
    Filed: May 1, 2019
    Publication date: June 4, 2020
    Inventors: Shu-Uei Jang, Chen-Huang Huang, Ryan Chia-Jen Chen, Shiang-Bau Wang, Shu-Yuan Ku
  • Publication number: 20200126868
    Abstract: In an embodiment, a device includes: a first fin extending from a substrate; a gate stack disposed on the first fin; a source/drain region disposed in the first fin; a contact etch stop layer (CESL) disposed over the source/drain region; a gate spacer extending along a side of the gate stack; and a dielectric plug disposed between the CESL and the gate spacer, where the dielectric plug, the CESL, the gate spacer, and the source/drain region collectively define a void physically separating the gate stack from the source/drain region.
    Type: Application
    Filed: June 3, 2019
    Publication date: April 23, 2020
    Inventors: Shiang-Bau Wang, Li-Wei Yin, Chen-Huang Huang, Ming-Jhe Sie, Ryan Chia-Jen Chen
  • Patent number: 10131539
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: November 20, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Han Meng, Chih-Hsien Hsu, Chia-Chi Chung, Yu-Pei Chiang, Wen-Chih Chen, Chen-Huang Huang, Zhi-Sheng Xu, Jr-Sheng Chen, Kuo-Chin Liu, Lin-Ching Huang
  • Publication number: 20180148324
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.
    Type: Application
    Filed: October 5, 2017
    Publication date: May 31, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Han MENG, Chih-Hsien HSU, Chia-Chi CHUNG, Yu-Pei CHIANG, Wen-Chih CHEN, Chen-Huang HUANG, Zhi-Sheng XU, Jr-Sheng CHEN, Kuo-Chin LIU, Lin-Ching HUANG