Abstract: A light-emitting device, including: a semiconductor stack generating a first light; and a filter formed on the stack, including a first surface facing the stack and a second surface opposite to the first surface. The filter includes pairs of layers with different refractive indexes alternately stacked, and a portion of the first light is transmitted by the filter. The light emitting device emits a second light including the portion of the first light, and the second light includes a first directional part with a first FWHM and a second directional part with a second FWHM. The first directional part has a first angle with a normal direction of the second surface in a range of 45-90 degrees, the second directional part has a second angle with the normal direction of the second surface in a range of 0-30 degrees, and the second FWHM is smaller than the first FWHM.

Abstract: A touch display device includes a printed circuit board and a cover. The printed circuit board has a top surface, a bottom surface and soldering points. The printed circuit board includes a first printed circuit, a light element and a second printed circuit. A part of the first printed circuit is on the top surface or the bottom surface and connected with the corresponding soldering point. The light emitting element is on the top surface and electrically connected to the first printed circuit. On the top surface, the second printed circuit does not overlap with the first printed circuit. The cover covers the printed circuit board. The cover has light transmission areas which are aligned with the light elements. The second printed circuit is configured to provide a capacitance value coupled to a capacitive sensing element coupled between the second printed circuit and the cover.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

Abstract: The present disclosure provides a semiconductor light-emitting device and a semiconductor light-emitting component. The semiconductor light-emitting device includes a substrate, a first semiconductor contact layer, a semiconductor light-emitting stack including an active layer, a first-conductivity-type contact structure, a second semiconductor contact layer, a second-conductivity-type contact structure and a first electrode pad. The first-conductivity-type contact structure is electrically connected to the first semiconductor contact layer. The second-conductivity-type contact structure is electrically connected to the second semiconductor contact layer. The first-conductivity-type contact structure has a first bottom surface and a first top surface, and the active layer has a second bottom surface and a second top surface.

Abstract: A semiconductor light-emitting device includes: a substrate; a semiconductor stack on the substrate including a first semiconductor contact layer including an upper surface; a light-emitting stack including an active layer on the upper surface; a second semiconductor contact layer on the light-emitting stack; and a recessed region including part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on the substrate and the light-emitting stack; and a first and a second electrode pad on the substrate and electrically connected to the first semiconductor contact layer and the transparent electrode via first and second openings of the protective layer. A ratio of an area of the substrate to an area of the transparent electrode ranges from 2 to 100. A ratio of an operating current of the semiconductor light-emitting device to the area of the transparent electrode ranges from 10 mA/mm2 to 1000 mA/mm2.

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.

Abstract: A light-emitting device includes: a substrate, including a first edge, a second edge, a third edge and a fourth edge; a semiconductor stack formed on the substrate, comprising a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, comprising a first pad electrode; and a second electrode formed on the second semiconductor layer, comprising a second pad electrode and a second finger electrode; wherein in a top view, the first pad electrode is adjacent to a corner of the substrate that is intersected by the first and the second edges; the second finger electrode is not parallel with the third and the first edges; and a distance between the second finger electrode and the first edge increases along a direction from an end of the second finger electrode that connects the second pad electrode toward the second edge.

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions regularly formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions includes a first portion and a second portion formed on the first portion and the first portion is integrated with the base portion; and wherein the base portion includes a first material and the first portion includes the first material.

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

Abstract: A touch display device includes a printed circuit board and a cover. The printed circuit board has a top surface, a bottom surface and soldering points. The printed circuit board includes a first printed circuit, a light element and a second printed circuit. A part of the first printed circuit is on the top surface or the bottom surface and connected with the corresponding soldering point. The light emitting element is on the top surface and electrically connected to the first printed circuit. On the top surface, the second printed circuit does not overlap with the first printed circuit. The cover covers the printed circuit board. The cover has light transmission areas which are aligned with the light elements. The second printed circuit is configured to provide a capacitance value coupled to a capacitive sensing element coupled between the second printed circuit and the cover.

Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 ?m; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

Abstract: A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

Abstract: A light-emitting element, includes a first edge, a second edge, a third edge and a fourth edge; a substrate; a semiconductor stack formed on the substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a transparent conductive layer, formed on the second semiconductor layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode extending from the first pad electrode; and a second electrode formed on the first second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; wherein the first finger electrode is disposed at and along the first edge; and wherein in top view, an overlapping portions of the first finger electrode and the second finger electrode are non-parallel.

Abstract: A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 ?m; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.