Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Semiconductor device and methods of forming the same are provided. A semiconductor device according to one embodiment includes a dielectric layer including a top surface, a plurality of magneto-resistive memory cells disposed in the dielectric layer and including top electrodes, a first etch stop layer disposed over the dielectric layer, a common electrode extending through the first etch stop layer to be in direct contact with the top electrodes, and a second etch stop layer disposed on the first etch stop layer and the common electrode. Top surfaces of the top electrodes are coplanar with the top surface of the dielectric layer.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A semiconductor device structure and a manufacturing method thereof are provided. The semiconductor device structure includes a semiconductor substrate, semiconductor channel sheets disposed over the semiconductor substrate, and source and drain regions located beside the semiconductor channel sheets. A gate structure is disposed between the source and drain regions and disposed over the semiconductor channel sheets. The gate structure laterally surrounds the semiconductor channel sheets. The gate structure includes a top gate electrode structure disposed above the semiconductor channel sheets, and lower gate electrode structures disposed between the semiconductor channel sheets. Sidewall spacers are disposed between the gate structure and source and drain regions, and the sidewall spacers located next to the top gate electrode structure have slant sidewalls.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: An antibody, or an antigen-binding fragment thereof, that binds specifically to human CSF-1R includes a heavy chain variable domain that contains a HCDR1 region having the sequence of SEQ ID NO: 4, a HCDR2 region having the sequence of SEQ ID NO: 5, and a HCDR3 region having the sequence of SEQ ID NO: 6; and a light chain variable domain that contains a LCDR1 region having the sequence of SEQ ID NO: 7, a LCDR2 region having the sequence of SEQ ID NO: 8, and a LCDR3 region having the sequence of SEQ ID NO: 9. The heavy chain variable domain comprises the sequence of SEQ ID NO: 2, and wherein the light chain variable domain comprises the sequence of SEQ ID NO: 3.

Abstract: A device includes: a piezoelectric transducer; a field effect transistor (FET) configured to provide a sub-threshold conduction path for leakage current across the piezoelectric transducer; wherein the FET comprises a gate; wherein each of a width and a length of the gate has a size in accordance with the sub-threshold conduction path being configured to substantially maintain an input voltage to the piezoelectric transducer across a path of the leakage current of the piezoelectric transducer.

Abstract: The disclosure provides an adjustable fixing assembly. The adjustable fixing assembly includes a base plate and a cover plate. The cover plate includes a plate portion and a protrusion portion protruding from the plate portion. The cover plate includes a first installation position and a second installation position. When the cover plate is in the first installation position, the protrusion portion extends away from the base plate, and the cover plate is spaced apart from the base plate by a first minimum distance. When the cover plate is in the second installation position, the protrusion portion extends towards the base plate, and the cover plate is spaced apart from the base plate by a second minimum distance, where the second minimum distance is smaller than the first minimum distance.

Abstract: A device includes: a piezoelectric transducer; a field effect transistor (FET) configured to provide a sub-threshold conduction path for leakage current across the piezoelectric transducer; wherein the FET comprises a gate; wherein each of a width and a length of the gate has a size in accordance with the sub-threshold conduction path being configured to substantially maintain an input voltage to the piezoelectric transducer across a path of the leakage current of the piezoelectric transducer.

Abstract: The disclosure provides an adjustable fixing assembly. The adjustable fixing assembly includes a base plate and a cover plate. The cover plate includes a plate portion and a protrusion portion protruding from the plate portion. The cover plate includes a first installation position and a second installation position. When the cover plate is in the first installation position, the protrusion portion extends away from the base plate, and the cover plate is spaced apart from the base plate by a first minimum distance. When the cover plate is in the second installation position, the protrusion portion extends towards the base plate, and the cover plate is spaced apart from the base plate by a second minimum distance, where the second minimum distance is smaller than the first minimum distance.

Abstract: A circuit board including electronic component and battery holder. Battery holder is fixed to circuit board and includes base, first conductive component and second conductive component. Base includes bottom portion and side portion. Bottom portion has top surface and bottom surface. Side portion stands on top surface. Side portion and bottom portion form accommodation space. First conductive component includes first contact part, first support part and first protruding part. First support part is connected to first contact part. First protruding part is located on first support part. First contact part is located in accommodation space. First support part extends outwards along normal direction of bottom surface. First protruding part extends along longitudinal direction of first support part, and side of first support part that is located away from first contact part is fixed to circuit board. Electronic component is located between bottom surface and circuit board.

Abstract: Provided is a method for preparing pimavanserin including reacting an intermediate compound represented by Formula (II) with N-(4-fluorobenzyl)-1-methylpiperidin-4-amine or a salt thereof, or reacting an intermediate compound represented by Formula (IV) with 4-isobutoxybenzylamine or a salt thereof, wherein L represents a heteroaryl group, —OR1 or halogen, and wherein R1 represents C1 to C10 alkyl or aryl. The present disclosure provides the method for preparing pimavanserin without the use of isocyanate intermediate.

Abstract: A steering wheel can include a rotation shaft, a hub, a periphery ring, and at least one arm. The latching portion is coupled to the rotation shaft. The hub is sleeved on the rotation shaft, and slidable along the rotation shaft. The button is positioned on the hub and configured to cooperate with the latching portion. The latching portion is configured to detachably couple the hub. The button is configure to push the latching portion to detach from the hub when being pressed. The periphery ring is made of flexible material. The at least one arm is pivoted to the hub and coupled to the periphery ring. The at least one arm is configured to be folded when the hub slides along the rotation shaft.

Abstract: A method of producing optically pure N-substituted-3-methoxy propionic acid is provided, which includes the steps of: reacting N-substituted-3-methoxy propionic acid represented by formula (III): with a chiral amine in a solvent to obtain a diastereomeric salt represented by formula (IV): subjecting the diastereomeric salt to a sequential washing process to obtain the optically pure N-substituted-3-methoxy propionic acid represented by one of formulae (Ia) and (Ib): wherein R1 is selected from the group consisting of C1-5 alkyl, C1-6 alkoxy and C6-10 aryloxy group, and R2 is selected from the group consisting of C2-5 alkyl, C6-8 cycloalkyl and C6-10 aryl.

Abstract: A vehicle securing system includes a steer wheel module. The steer wheel module has a steer wheel, a steer wheel shaft connected to the steer wheel, the steer wheel shaft having a plurality of joints, and an electric wire received in the steer wheel shaft. The steer wheel shaft is capable of bending at the joints. At least one of the plurality of the joints includes an electrical connector, and the electrical connector is configured to control the electric wire shift between conducting state and non-conducting state.

Abstract: Novel quinoline derivatives are disclosed. Also disclosed are synthesis and use thereof for treating neurodegenerative diseases.

Abstract: A vehicle securing system includes a steer wheel module. The steer wheel module has a steer wheel, a steer wheel shaft connected to the steer wheel, the steer wheel shaft having a plurality of joints, and an electric wire received in the steer wheel shaft. The steer wheel shaft is capable of bending at the joints. At least one of the plurality of the joints includes an electrical connector, and the electrical connector is configured to control the electric wire shift between conducting state and non-conducting state.

Abstract: A steering wheel can include a rotation shaft, a hub, a periphery ring, and at least one arm. The latching portion is coupled to the rotation shaft. The hub is sleeved on the rotation shaft, and slidable along the rotation shaft. The button is positioned on the hub and configured to cooperate with the latching portion. The latching portion is configured to detachably couple the hub. The button is configure to push the latching portion to detach from the hub when being pressed. The periphery ring is made of flexible material. The at least one arm is pivoted to the hub and coupled to the periphery ring. The at least one arm is configured to be folded when the hub slides along the rotation shaft.

Abstract: The invention relates to a light guide element and an optical device comprised thereof. The optical device includes a substrate, a light emitting element, a lid body, a light guide element, a support pad, and an indicator panel. The light emitting element is disposed on the substrate. The lid body is coupled to the substrate and contains a receiving groove on the surface. The light guide element is coupled to the inner side of the lid body and is substantially disposed above the light emitting element. The underside of the support pad is affixed to the receiving groove. The underside of the indicator panel is affixed to the surface of the support pad whereas the indicator panel includes a photic zone where light, emitted from the light emitting element and guided by the light guide element, passes through.