Abstract: A method and a sensor for detecting L-cystine are disclosed. The method is implemented by assembling a sodium 3,3?-dithiodipropane sulfonate (SPS) membrane on a surface of Au membrane layer of an Au electrode and using an extended gate of field effect transistor (FET) and in-situ signal amplification of the FET to detect L-cystine sensitively. The polyanion of the SPS membrane adsorbs and binds a positively charged target L-cystine through electrostatic interaction, thus forming an electric double layer structure to generate a membrane potential identifying a monovalent organic ammonium ion. The sensor includes the FET, wherein a gate-extended gold electrode is arranged on the FET, and the SPS membrane is assembled on the surface of the Au membrane layer of the gate-extended gold electrode. The sensor has an excellent Nernst response to L-cystine.

Abstract: Provided are a mercapto group-loaded layered double hydroxide (LDH)-based magnetic composite particle, and a preparation method and use thereof. The method includes: dissolving a water-soluble divalent magnesium salt and a water-soluble trivalent aluminum salt in water to obtain a mixed salt solution; pumping ammonia water into the mixed salt solution, and performing reaction I under stirring, subjecting an obtained product to centrifugation, and washing product obtained with deionized water; mixing the product with water, ethanol, and a coupling agent KH-580 to obtain a mixture, subjecting the mixture to reaction II while stirring to obtain mercapto group-loaded LDH; mixing the mercapto group-loaded LDH with ferroferric oxide and sodium alginate, adding deionized water thereto, and stirring to obtain a homogeneous mixed solution; adding the homogeneous mixed solution into a calcium chloride solution dropwise to form a magnetic bead; and leaving the magnetic bead to harden, and then washing and drying.

Abstract: Provided are a computer program product, system, and method for training and using a vector encoder to determine vectors for sub-images of text in an image to subject to optical character recognition. A vector encoder is trained to encode images representing text into vectors in a vector space. Vectors of images representing similar text have a high degree of cohesion in the vector space. Vectors of images representing dissimilar text have a low degree of cohesion in the vector space. An input image is processed to determine sub-images of the input image that bound text represented in the input image. The sub-images are inputted to the vector encoder to output sub-image vectors. The vector encoder generates a search vector for search text. Optical character recognition is applied to at least one region of the input image including the sub-images having sub-image vectors matching the search vector.

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: Doping techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and performing a knock-on implantation process to drive a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming a doped feature. The doped amorphous layer includes a non-crystalline form of a material. In some implementations, the knock-on implantation process crystallizes at least a portion of the doped amorphous layer, such that the portion of the doped amorphous layer becomes a part of the fin structure. In some implementations, the doped amorphous layer includes amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.

Abstract: A model for predicting bioavailability of arsenic in site soil and a construction method and an application thereof, includes steps of: leveling soil after selecting a measuring point, vertically placing a measuring sleeve, fully supplying water to site soil to be measured, balancing for 20-40 min, measuring a water content in a soil volume not less than 40%, placing a piston DGT device into the measuring sleeve and pressing the device into soil, covering a top of the measuring sleeve with a wind shield, cleaning the piston DGT device after the measurement, analyzing a concentration of available arsenic by ICP-MS, and measuring available arsenic of soil; linearly fitting the available arsenic measured by a DGT method with human bioavailable arsenic measured by a UBM method, and obtaining a model for predicting bioavailability of arsenic in site soil.

Abstract: Described herein are T cells engineered to express a chimeric antigen receptor (CAR), such as an anti-mesothelin CAR alone or in combination with a follicle-stimulating hormone receptor (FSHR) binding domain and/or a dominant negative transforming growth factor-? receptor II (dnTGF?RII) for the treatment of diseases associated with mesothelin expression. Also described are T cells engineered to express a modified T cell receptor (TCR).

Abstract: A fan includes a fan frame and a driving device. The fan frame includes a base, a frame shell and static blades arranged on the periphery of the base. The driving device includes a stator structure and a rotor structure. The stator structure includes a stator magnetic pole group and a bushing. The rotor structure includes a bearing, a shaft, a rotor shell, a magnetic structure, a magnetic shell and blades. The shaft is connected with the rotor shell and disposed through the bearing. The stator magnetic pole group magnetically drives the magnetic structure to rotate the rotor shell. Two ends of the frame shell are configured with two turning portions, respectively. The two turning portions are disposed between parts of the frame shell with different curvatures. A curvature of the first turning portion is larger than a curvature of the second turning portion.

Abstract: A semiconductor structure includes a dielectric layer over a substrate, a via conductor over the substrate and in the dielectric layer, and a first graphene layer disposed over the via conductor. In some embodiments, a top surface of the via conductor and a top surface of the dielectric layer are level. In some embodiments, the first graphene layer overlaps the via conductor from a top view. In some embodiments, the semiconductor structure further includes a second graphene layer under the via conductor and a third graphene layer between the dielectric layer and the via conductor. In some embodiments, the second graphene layer is between the substrate and the via conductor.

Abstract: The present disclosure provides a method and device for intelligent control of heating furnace combustion based on a big data cloud platform, which relates to the technical field of artificial intelligence control. The method includes: construction of big data cloud platform based on production and operation parameters of the heating furnace; identification of key factors in the production process of the heating furnace by using big data mining technology; independent deployment of traditional heating furnace combustion control systems based on the mechanism model; and integration of cloud platform big data expert knowledge base and the heating furnace combustion intelligent control system.

Abstract: A logic cell structure includes a first portion, a second portion and a third portion. The first portion, arranged to be a first layout of a first semiconductor element, is placed in a first cell row of a substrate area extending in a first direction. The second portion, arranged to be a second layout of a second semiconductor element, is placed in a second cell row of the substrate area. The third portion is arranged to be a third layout of an interconnecting path used for coupling the first semiconductor element and the second semiconductor element. The first, second and third portions are bounded by a bounding box with a height in a second direction and a width in the first direction. Respective centers of the first portion and the second portion are arranged in a third direction different from each of the first direction and the second direction.

Abstract: Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.

Abstract: A display device and a manufacturing method thereof are disclosed. The display device includes a base substrate and at least one pixel circuit provided on the base substrate. The pixel circuit includes a driving transistor, a first transistor, and a second transistor; the driving transistor includes a control electrode, a first electrode, and a second electrode; a direction from a first electrode of the first transistor to a second electrode of the first transistor is a first direction, a direction from a first electrode of the second transistor to a second electrode of the second transistor is a second direction, a direction from the first electrode of the driving transistor to the second electrode of the driving transistor is a fourth direction, and at least one of the first direction and the second direction intersects with the fourth direction.

Abstract: Disclosed are a special fertilizer for intercropping maize and peanuts and a cultivation method for maintaining soil organic carbon (SOC) balance, belonging to the technical field of SOC balance. The special fertilizer for intercropping maize and peanuts includes the following raw materials: coated urea, heavy superphosphate, ammonium sulfate, fermented soybean meal, bentonite, sodium molybdate, borax, humic acid, ammonium dihydrogen phosphate, plant ash and zinc sulfate heptahydrate. The cultivation method includes the steps of land selection, land preparation, fertilizing, sowing, field management, and rotation.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: In a method, in response to an interface a computer-implemented analysis assistant initiates a presentation of inefficiency results, determined an efficiency analyzer based on a mapping of a dataflow program to execute on hardware of a computing system. The assistant receives an inefficiency included among the inefficiency results and composes formatted inefficiency results comprising a presentation format of the inefficiency to assist a developer of the dataflow program to interpret the inefficiency. The analysis assistant outputs the formatted inefficiency results to an interface, which can comprise an interface to output the formatted inefficiency results for use by the developer to improve the dataflow program in association with the inefficiency. In implementations the presentation can comprise an interactive presentation with a developer of the dataflow program. A computer program product and a computing system can implement the method.

Abstract: Disclosed in the present application are switching of a search space set group of a target cell, and a control method and apparatus thereof. In the present application, a terminal is flexibly instructed by means of downlink control signaling carrying a user dedicated instruction to perform search space set group switching, so as to implement search space set group switching for service features of different users and improve the energy-saving performance of the terminal. The method comprises: receiving control signaling that is sent by a network side and carries a user dedicated instruction, the user dedicated instruction being used for instructing a terminal to switch at least one target cell from a current search space set group to a target search space set group; and switching the at least one target cell from the current search space set group to the target search space set group according to the control signaling.

Abstract: A manufacturing method of a multi-screen display is provided. The manufacturing method includes the following steps. A first panel is provided. A second panel is provided. The first panel and the second panel are spliced. The first color coordinate of the first panel includes a first horizontal coordinate and a first vertical coordinate, and the second color coordinate of the second panel includes a second horizontal coordinate and a second vertical coordinate. The difference between the horizontal coordinate and the second horizontal coordinate is ?x, the difference between the first vertical coordinate and the second vertical coordinate is ?y, and ?x and ?y satisfy the following relationship: ?=arctan(?x/?y), 46 degrees???126 degrees.

Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Abstract: A keyswitch structure includes a keycap support mechanism and a keycap that is supported by the keycap support mechanism in a vertical direction. The keycap support mechanism includes a base and two supports. The base has two sliding slots. Each sliding slot has an opening in a horizontal direction and an obstruction block at the opening. The horizontal direction is perpendicular to the vertical direction. Each support has a sliding portion and a linkage portion. The sliding portions slide parallel to the horizontal direction in the sliding slots correspondingly. The obstruction block prevents the corresponding sliding portion from disengaging from the corresponding sliding slot. The two linkage portions push against each other in line contact, so that the two supports are mutually driven through the two linkage portions.