Patents by Inventor Cheng Chin Lee

Cheng Chin Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11935957
    Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.
    Type: Grant
    Filed: August 9, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chung-Chiang Wu, Wei-Chin Lee, Shih-Hang Chiu, Chia-Ching Lee, Hsueh Wen Tsau, Cheng-Yen Tsai, Cheng-Lung Hung, Da-Yuan Lee, Ching-Hwanq Su
  • Patent number: 11935783
    Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20240088023
    Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.
    Type: Application
    Filed: November 20, 2023
    Publication date: March 14, 2024
    Inventors: Shao-Kuan LEE, Kuang-Wei YANG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Ting-Ya LO, Chi-Lin TENG, Hsin-Yen HUANG, Hsiao-Kang CHANG, Shau-Lin SHUE
  • Patent number: 11923243
    Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Yen Huang, Ting-Ya Lo, Shao-Kuan Lee, Chi-Lin Teng, Cheng-Chin Lee, Shau-Lin Shue, Hsiao-Kang Chang
  • Patent number: 11908792
    Abstract: A semiconductor device includes a first conductive feature, a second conductive feature, and a first dielectric layer positioned between the first conductive feature and the second conductive feature. An etch stop layer is over the first dielectric layer. A cap layer is over the first conductive feature, the second conductive feature, and the etch stop layer.
    Type: Grant
    Filed: November 29, 2021
    Date of Patent: February 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Shao-Kuan Lee, Hai-Ching Chen, Hsin-Yen Huang, Shau-Lin Shue, Cheng-Chin Lee
  • Patent number: 11901221
    Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.
    Type: Grant
    Filed: June 1, 2022
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shao-Kuan Lee, Hai-Ching Chen, Hsin-Yen Huang, Shau-Lin Shue, Cheng-Chin Lee
  • Patent number: 11894266
    Abstract: A method and structure for forming an enhanced metal capping layer includes forming a portion of a multi-level metal interconnect network over a substrate. In some embodiments, the portion of the multi-level metal interconnect network includes a plurality of metal regions. In some cases, a dielectric region is disposed between each of the plurality of metal regions. By way of example, a metal capping layer may be deposited over each of the plurality of metal regions. Thereafter, in some embodiments, a self-assembled monolayer (SAM) may be deposited, where the SAM forms selectively on the metal capping layer, while the dielectric region is substantially free of the SAM. In various examples, after selectively forming the SAM on the metal capping layer, a thermal process may be performed, where the SAM prevents diffusion of the metal capping layer during the thermal process.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Kuan Lee, Cheng-Chin Lee, Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20240038666
    Abstract: A semiconductor device includes a substrate and an interconnect layer disposed over the substrate. The interconnect layer includes a dielectric layer, an interconnect structure disposed in the dielectric layer, and an etch stop layer which is disposed on a lower end surface of the interconnect structure and which includes silicon carbonitride represented by a general formula of SixCyNz, wherein x is a silicon content ranging from 30 atomic % to 60 atomic %, y is a carbon content ranging from 25 atomic % to 60 atomic %, z is a nitrogen content ranging from 10 atomic % to 20 atomic %, and a sum of x, y, and z is 100 atomic %.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Fang CHENG, Cheng-Chin LEE, Yen-Ju WU, Hsin-Yen HUANG, Hsiao-Kang CHANG
  • Publication number: 20240038665
    Abstract: An interconnection structure is provided to include an interlayer dielectric (ILD) layer that is disposed over a substrate, a metal via that is disposed in the ILD layer, and a metal wire that is disposed over the metal via in the ILD layer and that is electrically connected to the metal via. The ILD layer includes silicon carbon nitride.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 1, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Fang CHENG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Yen-Ju WU, Hsiao-Kang CHANG
  • Publication number: 20240021517
    Abstract: In one embodiment, a self-aligned via is presented. In one embodiment, an inhibitor layer is selectively deposited on the lower conductive region. In one embodiment, a dielectric is selectively deposited on the lower conductive region. In one embodiment, the deposited dielectric may be selectively etched. In one embodiment, an inhibitor is selectively deposited on the lower dielectric region. In one embodiment, a dielectric is selectively deposited on the lower dielectric region. In one embodiment, the deposited dielectric over the lower conductive region has a different etch rate than the deposited dielectric over the lower dielectric region which may lead to a via structure that is aligned with the lower conductive region.
    Type: Application
    Filed: July 28, 2023
    Publication date: January 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shao-Kuan Lee, Hsin-Yen Huang, Cheng-Chin Lee, Hai-Ching Chen, SHAU-LIN SHUE
  • Patent number: 11854963
    Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.
    Type: Grant
    Filed: June 12, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shao-Kuan Lee, Kuang-Wei Yang, Cherng-Shiaw Tsai, Cheng-Chin Lee, Ting-Ya Lo, Chi-Lin Teng, Hsin-Yen Huang, Hsiao-Kang Chang, Shau-Lin Shue
  • Publication number: 20230386901
    Abstract: A method for forming an interconnect structure includes forming a first conductive layer over a dielectric layer, forming one or more openings in the first conductive layer to expose portions of dielectric surface of the dielectric layer and conductive surfaces of the first conductive layer, wherein the one or more openings separates the first conductive layer into one or more portions.
    Type: Application
    Filed: August 4, 2023
    Publication date: November 30, 2023
    Inventors: Ting-Ya LO, Cheng-Chin LEE, Shao-Kuan LEE, Chi-Lin TENG, Hsin-Yen HUANG, Hsiaokang CHANG, Shau-Lin SHUE
  • Publication number: 20230377954
    Abstract: Some embodiments relate to a semiconductor structure including a conductive wire disposed within a first dielectric structure. An etch stop layer overlies the first dielectric structure. A dielectric capping layer is disposed between an upper surface of the conductive wire and the etch stop layer. An upper dielectric layer is disposed along sidewalls of the conductive wire and an upper surface of the etch stop layer. The upper dielectric layer contacts an upper surface of the dielectric capping layer and has a top surface vertically above the etch stop layer.
    Type: Application
    Filed: August 2, 2023
    Publication date: November 23, 2023
    Inventors: Hsin-Yen Huang, Chi-Lin Teng, Hai-Ching Chen, Shau-Lin Shue, Shao-Kuan Lee, Cheng-Chin Lee, Ting-Ya Lo
  • Publication number: 20230369114
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.
    Type: Application
    Filed: July 26, 2023
    Publication date: November 16, 2023
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hsiang-Wei Liu, Tai-I Yang, Chia-Tien Wu, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 11810815
    Abstract: Some embodiments relate to a semiconductor structure including a conductive wire disposed within a first dielectric structure. An etch stop layer overlies the first dielectric structure. A dielectric capping layer is disposed between an upper surface of the conductive wire and the etch stop layer. An upper dielectric layer is disposed along sidewalls of the conductive wire and an upper surface of the etch stop layer. The upper dielectric layer contacts an upper surface of the dielectric capping layer and has a top surface vertically above the etch stop layer.
    Type: Grant
    Filed: April 26, 2022
    Date of Patent: November 7, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsin-Yen Huang, Chi-Lin Teng, Hai-Ching Chen, Shau-Lin Shue, Shao-Kuan Lee, Cheng-Chin Lee, Ting-Ya Lo
  • Patent number: 11769695
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a first metal feature in a dielectric layer and a capping layer over the first metal feature, selectively depositing a blocking layer over the capping layer, depositing an etch stop layer (ESL) over the workpiece, removing the blocking layer, and depositing a second metal feature over the workpiece such that the first metal feature is electrically coupled to the second metal feature. The blocking layer prevents the ESL from being deposited over the capping layer.
    Type: Grant
    Filed: February 22, 2021
    Date of Patent: September 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hsiang-Wei Liu, Tai-I Yang, Chia-Tien Wu, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20230290705
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate and a device region formed over the substrate. The semiconductor structure further includes an interconnect structure formed over the device region and a first passivation layer formed over the interconnect structure. The semiconductor structure also includes a metal pad formed over and extending into the first passivation layer and a second passivation layer formed over the first passivation layer. The second passivation layer includes a thermal conductive material, and the thermal conductivity of the thermal conductive material is higher than 4 W/mK.
    Type: Application
    Filed: March 14, 2022
    Publication date: September 14, 2023
    Inventors: Cheng-Chin LEE, Shau-Lin SHUE, Shao-Kuan LEE, Hsiao-Kang CHANG, Cherng-Shiaw TSAI, Kai-Fang CHENG, Hsin-Yen HUANG, Ming-Hsien LIN, Chuan-Pu CHOU, Hsin-Ping CHEN, Chia-Tien WU, Kuang-Wei YANG
  • Patent number: 11756878
    Abstract: In one embodiment, a self-aligned via is presented. In one embodiment, an inhibitor layer is selectively deposited on the lower conductive region. In one embodiment, a dielectric is selectively deposited on the lower conductive region. In one embodiment, the deposited dielectric may be selectively etched. In one embodiment, an inhibitor is selectively deposited on the lower dielectric region. In one embodiment, a dielectric is selectively deposited on the lower dielectric region. In one embodiment, the deposited dielectric over the lower conductive region has a different etch rate than the deposited dielectric over the lower dielectric region which may lead to a via structure that is aligned with the lower conductive region.
    Type: Grant
    Filed: March 5, 2021
    Date of Patent: September 12, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Shao-Kuan Lee, Hsin-Yen Huang, Cheng-Chin Lee, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20230260831
    Abstract: A method for manufacturing a semiconductor device includes: forming a first feature and a second feature extending in a normal direction transverse to a substrate; directionally depositing a dielectric material upon the features at an inclined angle relative to the normal direction so as to form a cap layer including a top portion disposed on a top surface of each of the features, and two opposite wall portions extending downwardly from two opposite ends of the top portion to partially cover two opposite lateral surfaces of each of the features, respectively, the cap layer on the first feature being spaced apart from the cap layer on the second feature; forming a sacrificial feature in a recess between the features; forming a sustaining layer to cover the sacrificial feature; and removing the sacrificial feature to form an air gap.
    Type: Application
    Filed: February 17, 2022
    Publication date: August 17, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Chin LEE, Ting-Ya LO, Chi-Lin TENG, Cherng-Shiaw TSAI, Shao-Kuan LEE, Kuang-Wei YANG, Gary LIU, Hsin-Yen HUANG, Hsiao-Kang CHANG, Shau-Lin SHUE
  • Publication number: 20230253286
    Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an electrical interconnect structure, a thermal interconnect structure, and a thermal passivation layer over a substrate. The electrical interconnect structure includes interconnect vias and interconnect wires embedded within interconnect dielectric layers. The thermal interconnect structure is arranged beside the electrical interconnect structure and includes thermal vias, thermal wires, and/or thermal layers. Further, the thermal interconnect structure is embedded within the interconnect dielectric layers. The thermal passivation layer is arranged over a topmost one of the interconnect dielectric layers. The thermal interconnect structure has a higher thermal conductivity than the interconnect dielectric layers.
    Type: Application
    Filed: April 18, 2023
    Publication date: August 10, 2023
    Inventors: Shao-Kuan Lee, Cherng-Shiaw Tsai, Ting-Ya Lo, Cheng-Chin Lee, Chi-Lin Teng, Kai-Fang Cheng, Hsin-Yen Huang, Hsiao-Kang Chang, Shau-Lin Shue