Patents by Inventor Cheng Horng
Cheng Horng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11935871Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.Type: GrantFiled: August 30, 2021Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hao-Yi Tsai, Cheng-Chieh Hsieh, Tsung-Hsien Chiang, Hui-Chun Chiang, Tzu-Sung Huang, Ming-Hung Tseng, Kris Lipu Chuang, Chung-Ming Weng, Tsung-Yuan Yu, Tzuan-Horng Liu
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Patent number: 11915994Abstract: A package structure is provided. The package structure includes a semiconductor die and a thermoelectric structure disposed on the semiconductor die. The thermoelectric structure includes P-type semiconductor blocks, N-type semiconductor blocks and metal pads. The P-type semiconductor blocks and the N-type semiconductor blocks are arranged in alternation with the metal pads connecting the P-type semiconductor blocks and the N-type semiconductor blocks. When a current flowing through one of the N-type semiconductor block, one of the metal pad, and one of the P-type semiconductor block in order, the metal pad between the N-type semiconductor block and the P-type semiconductor block forms a cold junction which absorbs heat generated by the semiconductor die.Type: GrantFiled: August 12, 2021Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Yen Hsieh, Chih-Horng Chang, Chung-Yu Lu
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Patent number: 9006704Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.Type: GrantFiled: February 11, 2011Date of Patent: April 14, 2015Assignee: Headway Technologies, Inc.Inventors: Guenole Jan, Ru Ying Tong, Witold Kula, Cheng Horng
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Patent number: 8673654Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: GrantFiled: October 23, 2009Date of Patent: March 18, 2014Assignee: Headway Technologies, Inc.Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Patent number: 8525280Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.Type: GrantFiled: July 26, 2011Date of Patent: September 3, 2013Assignee: Headway Technologies, Inc.Inventors: Tai Min, Cheng Horng, Po Kang Wang
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Patent number: 8268641Abstract: A method of forming a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.Type: GrantFiled: November 7, 2011Date of Patent: September 18, 2012Assignee: MagIC Technologies, Inc.Inventors: Yimin Guo, Cheng Horng, Ru-Ying Tong
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Publication number: 20120205758Abstract: A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.Type: ApplicationFiled: February 11, 2011Publication date: August 16, 2012Inventors: Guenole Jan, Ru Ying Tong, Witold Kula, Cheng Horng
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Patent number: 8178363Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.Type: GrantFiled: November 4, 2011Date of Patent: May 15, 2012Assignee: MagIC Technologies, Inc.Inventors: Po-Kang Wang, Yimin Guo, Cheng Horng, Tai Min, Ru-Ying Tong
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Publication number: 20120064640Abstract: A method of forming a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.Type: ApplicationFiled: November 7, 2011Publication date: March 15, 2012Inventors: Yimin Guo, Cheng Horng, Ru-Ying Tong
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Publication number: 20120058574Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.Type: ApplicationFiled: November 4, 2011Publication date: March 8, 2012Inventors: Po-Kang Wang, Yimin Guo, Cheng Horng, Tai Min, Ru-Ying Tong
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Publication number: 20110284977Abstract: An MRAM array of MTJ memory cells is provided wherein each such cell is a layered MTJ structure located at an intersection of a word and bit line and has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The array of MTJ memory cells so provided is far less sensitive to shape irregularities and edge defects of individual cells than arrays of the prior art.Type: ApplicationFiled: July 26, 2011Publication date: November 24, 2011Inventors: Tai Min, Cheng Horng, Po Kang Wang
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Patent number: 8062909Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.Type: GrantFiled: March 16, 2010Date of Patent: November 22, 2011Assignee: MagIC Technologies, Inc.Inventors: Po-Kang Wang, Yimin Guo, Cheng Horng, Tai Min, Ru-Ying Tong
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Patent number: 8058697Abstract: We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm.Type: GrantFiled: March 26, 2007Date of Patent: November 15, 2011Assignee: MagIC Technologies, Inc.Inventors: Yimin Guo, Cheng Horng, Ru-Ying Tong
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Patent number: 8039885Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.Type: GrantFiled: March 16, 2010Date of Patent: October 18, 2011Assignee: MagIC Technologies, Inc.Inventors: Po-Kang Wang, Yimin Guo, Cheng Horng, Tai Min, Ru-Ying Tong
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Patent number: 7999360Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer of NiCr, NiFe, or NiFeCr layer on the oc-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: GrantFiled: October 23, 2009Date of Patent: August 16, 2011Assignees: Headway Technologies, Inc., MagIC Technologies, Inc.Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Patent number: 7994596Abstract: An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.Type: GrantFiled: September 5, 2006Date of Patent: August 9, 2011Assignee: Headway Technologies, Inc.Inventors: Tai Min, Cheng Horng, Po Kang Wang
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Patent number: 7696548Abstract: An MRAM is disclosed that has a MTJ comprised of a ferromagnetic layer with a magnetization direction along a first axis, a super-paramagnetic (SP) free layer, and an insulating layer formed therebetween. The SP free layer has a remnant magnetization that is substantially zero in the absence of an external field, and in which magnetization is roughly proportional to an external field until reaching a saturation value. In one embodiment, a separate storage layer is formed above, below, or adjacent to the MTJ and has uniaxial anisotropy with a magnetization direction along its easy axis which parallels the first axis. In a second embodiment, the storage layer is formed on a non-magnetic conducting spacer layer within the MTJ and is patterned simultaneously with the MTJ. The SP free layer may be multiple layers or laminated layers of CoFeB. The storage layer may have a SyAP configuration and a laminated structure.Type: GrantFiled: August 9, 2005Date of Patent: April 13, 2010Assignee: MagIC Technologies, Inc.Inventors: Po-Kang Wang, Yimin Guo, Cheng Horng, Tai Min, Ru-Ying Tong
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Publication number: 20100047929Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: ApplicationFiled: October 23, 2009Publication date: February 25, 2010Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Publication number: 20100044680Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: ApplicationFiled: October 23, 2009Publication date: February 25, 2010Inventors: LIUBO HONG, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Patent number: 7611912Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: GrantFiled: June 30, 2004Date of Patent: November 3, 2009Assignee: Headway Technologies, Inc.Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong