Abstract: Provided is a method for generating a knowledge graph for a topic. First, a set of documents may be received. A user may then provide an indication of exemplary entities associated with a topic of interest. Then, using one or more artificial intelligence models, a plurality of textual entities may be extracted from the documents. A quality level of each extracted textual entity may be determined. Each quality level may indicate a degree of similarity between a textual entity and each exemplary entity of the one or more exemplary entities. Next, a plurality of high-quality textual entities may be identified and categorized according to one or more sub-topics associated with the topic. Connection information indicating relationships between the sub-topics may be determined. Finally, a knowledge graph for the topic that represents the sub-topics in the documents and the relationships between said sub-topics may be generated.

Abstract: An image sensor includes a pixel and an isolation structure. The pixel includes a photosensitive region and a circuitry region next to the photosensitive region. The isolation structure is located over the pixel, where the isolation structure includes a conductive grid and a dielectric structure covering a sidewall of the conductive grid, and the isolation structure includes an opening or recess overlapping the photosensitive region. The isolation structure surrounds a peripheral region of the photosensitive region.

Abstract: A memory device is provided. The memory device comprises a memory cell, a first power rail and a suppressing circuit. The memory cell is coupled to a word line. The first power rail transmits a first supply voltage. The suppressing circuit comprises a first transistor and a second transistor. The first transistor is diode-connected, coupled to the word line, and disposed at a first layer. The second transistor is diode-connected coupled between the first transistor and the first power rail, and disposed at a second layer under the first layer. The first transistor and the second transistor overlap with each other in a layout view.

Abstract: In at least one embodiment, an audio limiter system is provided. The system includes a first limiter block, a second limiter block, and a third limiter block. The first limiter block receives an incoming audio signal having a plurality of first frequencies and limits the incoming audio signal with the plurality of first frequencies based on at least a first gain threshold to generate at least a first high audio output signal. The second limiter block receives the incoming audio signal having a plurality of second frequencies and limits the incoming audio signal with the plurality of second frequencies based on at least a second gain threshold to generate at least a first low audio output signal. The third limiter block receives the first high audio output signal and/or the first low audio output signal and limits the first high audio output signal and/or the first low audio output signal.

Abstract: A display substrate and a display apparatus. The display substrate includes a display area provided with pixel circuits arranged in an array and a non-display area provided with M light emitting driving circuits, M control driving circuits and M reset driving circuits. Odd-numbered light emitting driving circuits are electrically connected with first and second light emitting clock signal lines, and even-numbered light emitting driving circuits are connected with third and fourth light emitting clock signal lines; and/or, odd-numbered control driving circuits are electrically connected with first and second control clock signal lines, and even-numbered control driving circuits are connected with third and fourth control clock signal lines; and/or, odd-numbered reset driving circuits are electrically connected with first and second reset clock signal lines, and even-numbered reset driving circuits are connected with third and fourth reset clock signal lines.

Abstract: Disclosed are a device and a method for transferring the semiconductor component, which aims to accurately measure the movement accuracy of a transfer stamp when transferring semiconductor components using a transfer stamp, thereby improving the alignment accuracy between the transfer stamp and the semiconductor component, ensuring the yield rate of the prepared products, and solving the problem in the related art that after the transfer stamp is aligned with a temporary carrier or a drive circuit backplane, the semiconductor components cannot be guaranteed by only relying on the large stroke up and down movement of the guide rail. The precise picking up of LED chips or accurate placement of them at the predetermined position on the driver circuit backplane results in a decrease in the transfer yield, affecting the technical issues of subsequent related processes.

Abstract: A light-emitting panel and a manufacturing method thereof, and a light-emitting apparatus are provided, which relate to the technical field of photoelectric technology. The light-emitting panel includes: a light-emitting substrate including a light-emitting area and a non-light-emitting area surrounding the light-emitting area; a first packaging layer disposed at a light emitting side of the light-emitting substrate; a low refractive index layer disposed at a side of a first packaging layer away from the light-emitting substrate, the low refractive index layer being arranged around the light-emitting area; a high refractive index layer disposed at sides of the low refractive index layer and the first packaging layer away from the light-emitting substrate, an orthographic projection of the high refractive index layer on the light-emitting substrate covering the light-emitting area, and the high refractive index layer covering a side surface of the low refractive index layer facing the light-emitting area.

Abstract: A wrist-mounted system for tracking hand poses includes one or more cameras mounted to a wearable band. In some examples, the one or more cameras are low profile and may be located less than 15 mm, and preferably less than 10 mm, of the wrist of the user. In some examples, a system includes a wearable band and one or more imaging sensors. The one or more imaging sensors are disposed to have a field of view that is anatomically distal when the wearable band is coupled to an arm of the user. The one or more imaging sensors each define an optical axis spaced from the wearable band of less than 15 mm, and preferably less than 10 mm. The image data may come from a single camera mounted on the back of the wrist which captures images of the surface contours of the back of the hand to infer hand poses and gestures.

Abstract: A method for calculating a surface relaxation rate of a shale includes: a relaxation time T distribution curve and a pore throat radius r distribution curve are obtained through experiments; abscissas of the two distribution curves are standardized, and the abscissa of the relaxation time T distribution curve is expanded or shrunk to ensure an abscissa value corresponding to a maximum ordinate value in the transformed relaxation time T distribution curve is same as an abscissa value corresponding to a maximum ordinate value in the pore throat radius r distribution curve; straight lines with a number of N parallel to a y-axis of a combined curve graph including the two distribution curves are drawn and a ? value corresponding to each straight line is calculated; and ? value with the number of N are processed to obtain a final surface relaxation rate ??.

Abstract: A method and system for providing tone detection for a content may include receiving a request to detect a tone for a content, retrieving user data and data about the content, detecting a content environment for the content based on at least one of the user data and the data about the content, detecting the tone for the content based on the content and the content environment, inputting the content and the detected tone into a machine-learning (ML) model for modifying the tone from the detected tone to a modified tone, obtaining at least one rephrased content segment as an output from the ML model, the rephrased content segment modifying the tone of the content from the detected tone to the modified tone, and providing at least one of the detected tone or the at least one rephrased content segment for display.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.

Abstract: An embedded circuit board, made without gas bubbles or significant internal gaps according to a manufacturing method which is provided, includes an inner layer assembly, an embedded element, and first and second insulating elements. The inner layer assembly comprises a first main portion with opposing first and second surfaces and a first groove not extending to the second surface is positioned at the first surface. A first opening penetrates the second surface, and the first opening and the first groove are connected. The first groove carries electronic elements for embedment. The first insulating element covers the first surface and a surface of the embedded element away from the second surface. The second insulating element covers the second surface and extends into the first opening to be in contact with the embedded element.

Abstract: A semiconductor structure includes a semiconductor substrate, an interconnection structure, a color filter, and a first isolation structure. The semiconductor substrate includes a first surface and a second surface opposite to the first surface. The interconnection structure is disposed over the first surface, and the color filter is disposed over the second surface. The first isolation structure includes a bottom portion, an upper portion and a diffusion barrier layer surrounding a sidewall of the upper portion. A top surface of the upper portion of the first isolation structure extends into and is in contact with a dielectric layer of the interconnection structure.

Abstract: Embodiments of this application provide application processing methods and apparatuses. One method includes: receiving a startup request from a first client device, where the startup request is used to start an application. Loading, in a high-level language execution environment of an enclave, a manifest file of the application and a dependency relationship between an enclave entrypoint function of the application and a static dependency class, and loading a static dependency class of the enclave entrypoint function of the application based on the manifest file and the dependency relationship between the enclave entrypoint function and the static dependency class.

Abstract: A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a passivation layer and a dielectric capping layer. The interconnect structure has a conductive pad located at a top of the interconnection structure. The passivation layer is disposed on the interconnection structure. The passivation layer has a first opening to expose a portion of the conductive pad. The dielectric capping layer is conformally formed on the passivation layer and extends into the first opening. The dielectric capping layer has a second opening to expose the portion of the conductive pad.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A lens module in a head-mounted device may include a fluid-filled chamber, a semi-rigid lens element that at least partially defines the fluid-filled chamber, and at least one actuator configured to selectively bend the semi-rigid lens element. The semi-rigid lens element may become rigid along a first axis when the lens element is curved along a second axis perpendicular to the first axis. Six actuators that are evenly distributed around the periphery of the semi-rigid lens element may be used to control the curvature of the semi-rigid lens element. The semi-rigid lens element may initially be planar or non-planar. For example, the semi-rigid lens element may initially have a spherically convex surface and a spherically concave surface. A tunable spherical lens may be incorporated into the lens module to offset a parasitic spherical lens power from the semi-rigid lens element.

Abstract: In a pattern formation method, a photoresist layer is formed over a substrate by combining a first precursor and a second precursor in a vapor state to form a photoresist material. The first precursor is an organometallic having a formula MaRbXc, where M is one or more selected from the group consisting of Sn, Bi, Sb, In, and Te, R is an alkyl group that is substituted by different EDG and/or EWG, X is a halide or sulfonate group, and 1?a?2, b?1, c?1, and b+c?4. The second precursor is water, an amine, a borane, and/or a phosphine. The photoresist material is deposited over the substrate, and selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.