Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.

Abstract: An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, a coupling element, a dielectric substrate, and a switchable circuit. The metal mechanism element has a slot. The feeding radiation element extends across the slot. A coupling gap is formed between the feeding radiation element and the coupling element. The feeding radiation element and the coupling element are disposed on the dielectric substrate. The switchable circuit includes a first metal element, a second metal element, a reactance element, a capacitor, and a diode. The first metal element is coupled to the coupling element. The reactance element is embedded in the first metal element. The second metal element is coupled through the capacitor to the ground element. The diode is coupled between the first metal element and the second metal element. The diode is turned on or off according to the control voltage difference.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: An antenna structure includes a metal mechanism element, a ground element, a feeding radiation element, a coupling element, a dielectric substrate, and a switchable circuit. The metal mechanism element has a slot. The feeding radiation element extends across the slot. A coupling gap is formed between the feeding radiation element and the coupling element. The feeding radiation element and the coupling element are disposed on the dielectric substrate. The switchable circuit includes a first metal element, a second metal element, a reactance element, a capacitor, and a diode. The first metal element is coupled to the coupling element. The reactance element is embedded in the first metal element. The second metal element is coupled through the capacitor to the ground element. The diode is coupled between the first metal element and the second metal element. The diode is turned on or off according to the control voltage difference.

Abstract: An electronic device includes a flexible substrate and a conductive wire. The flexible substrate includes a first bending region and a side region connected to the first bending region. The conductive wire is disposed on the flexible substrate and includes a metal portion and a plurality of openings disposed in the metal portion. A ratio of a total width of the metal portion disposed in the first bending region to a total width of the metal portion disposed in the side region is in a range from 0.8 to 1.2, and a length of one of the openings in the first bending region is less than or equal to a length of one of the openings in the side region.

Abstract: A portable electronic device is provided and includes a first display module, a second display module, a keyboard device, a sensing unit and a control unit. The second display module is pivotally connected to the first display module. The sensing unit is configured to sense a position of the keyboard device relative to the second display module to output a sensing signal. The control unit is configured to control a displaying image of the second display module according to the sensing signal.

Abstract: An electronic device is disclosed. The electronic device includes a wireless module configured to emit a first radar signal and receive a second radar signal, which is the first radar signal reflected by a user; a gravity sensor configured to sense a status of the electronic device to generate a sensing result; and a control unit coupled to the wireless module and the gravity sensor, and configured to control the wireless module to emit the first radar signal when the sensing result conforms to an emitting condition and determine a physiological status of the user according to the second radar signal received by the wireless module.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: The present disclosure relates to a method for fabricating a semiconductor structure. The method includes providing a substrate with a gate structure, an insulating structure over the gate structure, and a S/D region; depositing a titanium silicide layer over the S/D region with a first chemical vapor deposition (CVD) process. The first CVD process includes a first hydrogen gas flow. The method also includes depositing a titanium nitride layer over the insulating structure with a second CVD process. The second CVD process includes a second hydrogen gas flow. The first and second CVD processes are performed in a single reaction chamber and a flow rate of the first hydrogen gas flow is higher than a flow rate of the second hydrogen gas flow.

Abstract: A mobile device performs a method for proximity-based redirection of data associated with web traffic. The method includes detecting a beacon signal from an external device when in proximity to the external device. The beacon signal contains a resource locator. The method also includes using the resource locator to redirect, to a redirecting device, data associated with web traffic requested by the mobile device from a website. The method further includes discontinuing the redirecting of the data associated with the web traffic when the beacon signal is no longer detected.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: The present invention provides a sustained release oral dosage form containing dalfampridine that can be administered once daily. The dosage form includes dalfampridine as the active pharmaceutical ingredient and the excipients comprising osmotic agents in a tablet core. The sustained release oral dosage form of the present invention can be administrated once daily and can provide a proper fluctuation index to reduce undesired adverse effect, prevent alcohol-induced dose dumping and release drug at a rate sufficient to maintain certain drug plasma concentration.

Abstract: An apparatus includes a first source and a common drain and on opposite sides of a first gate surrounded by a first gate spacer, a second source and the common drain on opposite sides of a second gate surrounded by a second gate spacer, a first protection layer formed along a sidewall of the first gate spacer, wherein a top surface of the first protection layer has a first slope, a second protection layer formed along a sidewall of the second gate spacer, wherein a top surface of the second protection layer has a second slope, a lower drain contact between the first gate and the second gate and an upper drain contact over the lower drain contact and between the first gate and the second gate, wherein at least a portion of the upper drain contact is in contact with the first slope and the second slope.

Abstract: A method includes forming a first transistor and a second transistor over a substrate, wherein the first transistor and the second transistor share a drain/source region formed between a first gate of the first transistor and a second gate of the second transistor, forming a first opening in an interlayer dielectric layer and between the first gate and the second gate, depositing an etch stop layer in the first opening and on a top surface of the interlayer dielectric layer, depositing a dielectric layer over the etch stop layer, applying a first etching process to the dielectric layer until the etch stop layer is exposed, performing a second etching process on the etch stop layer until an exposed portion of the etch stop layer and portions of the dielectric layer have been removed.

Abstract: A method includes forming a first transistor and a second transistor over a substrate, wherein the first transistor and the second transistor share a drain/source region formed between a first gate of the first transistor and a second gate of the second transistor, forming a first opening in an interlayer dielectric layer and between the first gate and the second gate, depositing an etch stop layer in the first opening and on a top surface of the interlayer dielectric layer, depositing a dielectric layer over the etch stop layer, applying a first etching process to the dielectric layer until the etch stop layer is exposed, performing a second etching process on the etch stop layer until an exposed portion of the etch stop layer and portions of the dielectric layer have been removed.

Abstract: A quantum dot nanocrystal structure includes: a core of a compound M1A1, wherein M1 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and A1 is an element selected from Se, S, Te, P, As, N, I, and O; an inner shell having a composition containing a compound M1xM21-xA1yA21-y, wherein M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, A2 is an element selected from Se, S, Te, P, As, N, I and O; and a multi-pod-structured outer shell of a compound M1A2 or M2A2 enclosing the inner shell and having a base portion and protrusion portions extending from the base portion.

Abstract: An electronic device has a method capable of automatically executing angle rotation. A second body is rotatably connected to a first body of the electronic device. A hinge mechanism is disposed between the first body and the second body. The hinge mechanism includes a hinge component, a motor unit, a coupling component and an angle detecting unit. The first body and the second body are connected to the hinge component. The motor unit is electrically connected to a controller of the electronic device. The coupling component is connected between the hinge component and the motor unit. The angle detecting unit is connected to the hinge component or the coupling component to read its rotary angle. The controller drives the motor unit to rotate the hinge component via the coupling component, and the second body can be moved relative to the first body and be fixed at a predetermined position.