Abstract: A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

Abstract: A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.

Abstract: A self-centering wafer carrier system for a chemical vapor deposition (CVD) reactor includes a wafer carrier comprising an edge. The wafer carrier at least partially supports a wafer for CVD processing. A rotating tube comprises an edge that supports the wafer carrier during processing. An edge geometry of the wafer carrier and an edge geometry of the rotating tube being chosen to provide a coincident alignment of a central axis of the wafer carrier and a rotation axis of the rotating tube during process at a desired process temperature.

Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

Abstract: A chemical vapor deposition reactor and a method of wafer processing are provided. The reactor can include a reaction chamber having an interior and an entry port for insertion and removal of substrates, a gas inlet manifold communicating with the interior of the chamber for admitting process gasses to form a deposit on substrates held within the interior, a shutter mounted to the chamber, and one or more cleaning elements mounted within the chamber. The shutter can be movable between (i) a run position in which the cleaning elements are remote from the exhaust channel and (ii) a cleaning position in which the one or more cleaning elements engage with the shutter so that the cleaning elements remove deposited particles from the shutter upon movement of the shutter to the cleaning position.

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.