Abstract: The present invention discloses a resistor voltage-bearing type on-state voltage drop measurement circuit for junction temperature monitoring and a monitoring method. The measurement circuit includes a high-resistance series high-voltage resistor RL, switching diodes D1 and D2, a low-voltage MOSFET M1, an inverter U1, a three-state gate U2, an RC delay circuit consisting of a resistor R1 and a capacitor C1, current-limiting resistors R2 and R3, auxiliary voltage sources VDD and VCC, an operational amplifier U3, and an isolation operational amplifier U4. and the monitoring method includes: designing an on-state voltage drop sampling circuit based on the high-resistance resistor and selecting parameters according to an actual application scenario; measuring a collector current and an on-state voltage drop model at different junction temperatures under an offline condition, and providing a calculation model for online monitoring; and performing online monitoring on the junction temperature.

Abstract: The present invention discloses a resistor voltage-bearing type on-state voltage drop measurement circuit for junction temperature monitoring and a monitoring method. The measurement circuit includes a high-resistance series high-voltage resistor RL, switching diodes D1 and D2, a low-voltage MOSFET M1, an inverter U1, a three-state gate U2, an RC delay circuit consisting of a resistor R1 and a capacitor C1, current-limiting resistors R2 and R3, auxiliary voltage sources VDD and VCC, an operational amplifier U3, and an isolation operational amplifier U4. and the monitoring method includes: designing an on-state voltage drop sampling circuit based on the high-resistance resistor and selecting parameters according to an actual application scenario; measuring a collector current and an on-state voltage drop model at different junction temperatures under an offline condition, and providing a calculation model for online monitoring; and performing online monitoring on the junction temperature.