Abstract: Fast service discovery method and apparatus in a dynamic resource environment using hierarchical Bloom filters. The fast service discovery method includes when resources are discovered, hierarchically classifying the resources based on multiple levels, designing multiple hierarchical Bloom filters for respective pieces of level information to respectively correspond to the multiple levels, and transforming the resources into a resource coordinate system via the Bloom filters, and identifying an available service using the resource coordinate system.

Abstract: A method of manufacturing a window for a display apparatus according to the present invention includes: providing, on a stage, a substrate including a foldable part bending around a folding axis extending in a first direction, and forming a groove on the foldable part. The forming the groove includes: grinding the foldable part by using a first machining wheel; grinding the foldable part by using a second machining wheel; and machining the foldable part by using a polishing wheel. The groove has at least one radius of curvature. The first machining wheel includes first abrasive grains, and the second machining wheel includes second abrasive grains less in size than the first abrasive grains.

Abstract: Fast service discovery method and apparatus in a dynamic resource environment using hierarchical Bloom filters. The fast service discovery method includes when resources are discovered, hierarchically classifying the resources based on multiple levels, designing multiple hierarchical Bloom filters for respective pieces of level information to, respectively correspond to, the multiple levels, and transforming the resources into a resource coordinate system via the Bloom filters, and identifying an available service using the resource coordinate system.

Abstract: A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured by the same. The method includes the steps of growing a GaN film on a base substrate and separating the base substrate from the GaN film. The step of growing the GaN film includes forming pits in the GaN film, the pits inducing an inversion domain boundary to be formed inside the GaN film. The GaN substrate can have a predetermined thickness with which it can be handled during layer transfer (LT) processing, and the warping of the GaN substrate can be minimized, thereby preventing cracks due to warping.

Abstract: A method of manufacturing a gallium nitride (GaN) substrate and a GaN substrate manufactured thereby. The method includes the steps of growing an aluminum nitride nucleation layer on a base substrate, growing a first gallium nitride film on the base substrate on which the aluminum nitride nucleation layer has been grown, the first gallium nitride film having a first content ratio of nitrogen to gallium, and growing a second gallium nitride film on the first gallium nitride film, the second gallium nitride film having a second content ratio of nitrogen to gallium which is lower than the first content ratio. Self-separation between the base substrate and the GaN substrate is possible during the growth process, thereby precluding mechanical separation, increasing a self-separation area, and minimizing the occurrence of warping.

Abstract: A method of manufacturing a free-standing gallium nitride (GaN) substrate, by which a free-standing GaN substrate can be manufactured without warping or cracks. The method includes the steps of collecting polycrystalline GaN powder that is deposited in a reactor or on a susceptor in a process of growing single crystalline GaN, loading the collected polycrystalline GaN powder into a forming mold, preparing a polycrystalline GaN substrate by sintering the loaded polycrystalline GaN powder, and forming a single crystalline GaN layer by growing single crystalline GaN over the polycrystalline GaN substrate. It is possible to reduce warping and cracks that are caused, due to the difference in the coefficient of thermal expansion, during the growth or cooling of single crystalline GaN in the process of manufacturing the free-standing GaN substrate.

Abstract: A method of manufacturing a free-standing substrate includes the steps of growing a first thin film on a heterogeneous substrate, forming an ion implantation layer in the first thin film by implanting ions into the first thin film, dividing the first thin film into an upper thin film and a lower thin film with respect to the ion implantation layer, and growing a second thin film on the upper thin film. The free-standing substrate is manufactured without warping or cracking. No additional processes, such as a laser separation process, for separating the free-standing substrate from the heterogeneous substrate are required.

Abstract: Methods are disclosed for calculating the amount of voltage coupled to a device. In some embodiments, the method may comprise identifying a conductor that is coupled to a device, extracting information regarding the relationship between the conductor coupled to the device and adjacent conductors, extracting information regarding signals that are present in the adjacent conductors, partitioning the signal information into phases, calculating a voltage induced in the conductor coupled to the device during each phase of the partitioned signal, calculating an average voltage induced in the conductor coupled to the device and, flagging the device if the average voltage induced is above a predetermined threshold.

Abstract: A method and apparatus for orientation of block copolymer microdomains via rapid solidification. Rapid solidification from a solvent may include directional solidification and/or epitaxy to form patterns of microdomains in a film of block copolymer. Microdomains may include various structures formed by components of a block copolymer, such as vertical lamellae, in-plane cylinders, and vertical cylinders, and may depend on film thickness. Orientation of structures in microdomains may be controlled to be approximately uniform, and spatial arrangement of microdomains may be controlled.

Abstract: Methods are disclosed for calculating the amount of voltage coupled to a device. In some embodiments, the method may comprise identifying a conductor that is coupled to a device, extracting information regarding the relationship between the conductor coupled to the device and adjacent conductors, extracting information regarding signals that are present in the adjacent conductors, partitioning the signal information into phases, calculating a voltage induced in the conductor coupled to the device during each phase of the partitioned signal, calculating an average voltage induced in the conductor coupled to the device and, flagging the device if the average voltage induced is above a predetermined threshold.

Abstract: A method and apparatus for orientation of block copolymer microdomains via rapid solidification. Rapid solidification from a solvent may include directional solidification and/or epitaxy to form patterns of microdomains in a film of block copolymer. Microdomains may include various structures formed by components of a block copolymer, such as vertical lamellae, in-plane cylinders, and vertical cylinders, and may depend on film thickness. Orientation of structures in microdomains may be controlled to be approximately uniform, and spatial arrangement of microdomains may be controlled.