Abstract: A modular pneumatic somatosensory device comprises a main body, a plurality of airbags, a plurality of inflating modules and a control module. The airbags are detachably disposed at different positions of the main body, and at least a part of the airbags have different sizes. The inflating modules are detachably disposed on the main body, and each inflating module is correspondingly connected with at least one of the airbags. The control module is detachably disposed on the main body and is electrically connected with the inflating modules. The control module controls the inflating modules to inflate the corresponding airbags according to a control signal.

Abstract: A first fin structure is disposed over a substrate. The first fin structure contains a semiconductor material. A gate dielectric layer is disposed over upper and side surfaces of the first fin structure. A gate electrode layer is formed over the gate dielectric layer. A second fin structure is disposed over the substrate. The second fin structure is physically separated from the first fin structure and contains a ferroelectric material. The second fin structure is electrically coupled to the gate electrode layer.

Abstract: A light emitting device includes a growth substrate, a light emitting component, a first conductive bump and a second conductive bump. The light emitting component is disposed on the growth substrate, including a first type semiconductor layer, a second type semiconductor layer, a light emitting layer, an ohmic contact layer, a first conductor layer, and a second conductor layer. The light emitting layer and the second type semiconductor layer are penetrated by a trench. The ohmic contact layer is disposed on the first type semiconductor layer and is disposed in the trench. The ohmic contact layer is electrically connected to the first type semiconductor layer. The first conductor layer is disposed on the first type semiconductor layer and is disposed in the trench. The first conductor layer covers the ohmic contact layer. The second conductor layer is disposed on the second type semiconductor layer, and is electrically connected to the second type semiconductor layer.

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

Abstract: A nitrogen-containing semiconductor device including a first type doped semiconductor layer, a multiple quantum well layer and a second type doped semiconductor layer is provided. The multiple quantum well layer includes barrier layers and well layers, and the well layers and the barrier layers are arranged alternately. The multiple quantum well layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer, and one of the well layers of the multiple quantum well layer is connected to the second type doped semiconductor layer.

Abstract: A nitrogen-containing semiconductor device including a substrate, a first AlGaN buffer layer, a second AlGaN buffer layer and a semiconductor stacking layer is provided. The first AlGaN buffer layer is disposed on the substrate, and the second AlGaN buffer layer is disposed on the first AlGaN buffer layer. A chemical formula of the first AlGaN buffer layer is AlxGa1-xN, wherein 0?x?1. The first AlGaN buffer layer is doped with at least one of oxygen having a concentration greater than 5×1017 cm?3 and carbon having a concentration greater than 5×1017 cm?3. A chemical formula of the second AlGaN buffer layer is AlyGa1-yN, wherein 0?y?1. The semiconductor stacking layer is disposed on the second AlGaN buffer layer.

Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

Abstract: A multiple quantum well structure includes a plurality of well-barrier sets arranged along a direction. Each of the well-barrier sets includes a barrier layer, at least one intermediate level layer, and a well layer. A bandgap of the barrier layer is greater than an average bandgap of the intermediate level layer, and the average bandgap of the intermediate level layer is greater than a bandgap of the well layer. The barrier layers, the intermediate level layers, and the well layers of the well-barrier sets are stacked by turns. Thicknesses of at least parts of the well layers in the direction gradually decrease along the direction, and thicknesses of at least parts of the intermediate level layers in the direction gradually increase along the direction. A method for manufacturing a multiple quantum well structure is also provided.

Abstract: A semiconductor structure includes a substrate, a first un-doped semiconductor layer, a second un-doped semiconductor layer and at least one doped insertion layer. The first un-doped semiconductor layer is disposed on the substrate. The second un-doped semiconductor layer is disposed on the first un-doped semiconductor layer. The doped insertion layer is disposed between the first un-doped semiconductor layer and the second un-doped semiconductor layer. A chemical formula of the doped insertion layer is InxAlyGa1-x-yN, wherein 0?x?1, 0?y?1.

Abstract: A patterned sapphire substrate manufacturing method uses two-section dip etching procedure to improve the lateral etching rate at each etching position, so as to produce a concave-convex pattern composed of a plurality of triangular pyramid structures protruded from a surface onto an upper surface of a sapphire substrate, such that less planar area of the sapphire substrate surface will remain, and a mixed solution of sulfuric acid and phosphoric acid is used in a first dip etching step, and pure phosphoric acid or a mixed solution of sulfuric acid and phosphoric acid is used in a second dip etching step for etching the sapphire substrate to control the inclination of each triangular pyramid structure precisely, and providing a better light extraction rate for later manufactured light emitting diodes.

Abstract: An interferometer receives an input optical signal and outputs a signal after changing at least the dispersion of said signal. At least portions of the interferometer are adjustable to adjust at least a first dispersion parameter. Examples of dispersion parameters which are adjustable include dispersion magnitude, center wavelengths and waveshapes or slopes. Preferably the dispersion in the output signal is substantially reduced or substantially eliminated, compared to the dispersion of the input signal. By providing for adjustability of one or more dispersion parameters, a dispersion compensator can be appropriately adjusted for use in a variety of applications.

Abstract: An optical device comprises a first birefringent crystal having a first length, a second birefringent crystal having a second length, and a dynamic polarization rotator. An optical signal propagating through the first and second birefringent crystals has an effective optical path length based, at least in part, upon the first length of the first birefringent crystal and the second length of the second birefringent crystal. The dynamic polarization rotator adjusts the effective optical path length of the optical signal in response to a control signal.

Abstract: An optical device comprises a first birefringent crystal having a first length, a second birefringent crystal having a second length, and a dynamic polarization rotator. An optical signal propagating through the first and second birefringent crystals has an effective optical path length based, at least in part, upon the first length of the first birefringent crystal and the second length of the second birefringent crystal. The dynamic polarization rotator adjusts the effective optical path length of the optical signal in response to a control signal.

Abstract: The present invention relates to a system and method for tunable dispersion compensation that uses a first reflective surface and a second reflective surface. The first reflective surface has a gradient reflective index and receives an input signal at an incident position. The first reflective surface and the second reflective surface process the input signal according to a dispersion function that is based at least in part upon the incident position of the input signal.

Abstract: component. 43.

Abstract: An interferometer receives an input optical signal and outputs a signal after changing at least the dispersion of said signal. At least portions of the interferometer are adjustable to adjust at least a first dispersion parameter. Examples of dispersion parameters which are adjustable include dispersion magnitude, center wavelengths and waveshapes or slopes. Preferably the dispersion in the output signal is substantially reduced or substantially eliminated, compared to the dispersion of the input signal. By providing for adjustability of one or more dispersion parameters, a dispersion compensator can be appropriately adjusted for use in a variety of applications.

Abstract: A stacked waveplate device that performs an optical wavelength filtering function is described which provides dispersion with a first magnitude and a first sign for a first optical path having a first output polarization and which provides a second dispersion with a substantially equal but oppositely-signed dispersion for a second optical path defining an output having an orthogonal polarization to the polarization of said first output path. Optical paths are configured to pass through first and second stacked waveplate devices sequentially with the optical dispersion of said second device having an approximately equal magnitude but opposite sign compared to the optical dispersion of the first optical stacked waveplate devices so as to provide canceling or compensation of optical dispersion.