Patents by Inventor Chi-Shen Lee

Chi-Shen Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11476404
    Abstract: An ultrasonic sensing device includes a housing, a piezoelectric assembly, a board and a plurality of fixing members. The housing includes a bottom wall, a top wall and a surrounding side wall connected between the top wall and the bottom wall. The piezoelectric assembly includes an encapsulating body and a piezoelectric sheet, wherein at least a portion of the piezoelectric sheet is enclosed by the encapsulating body and has a sensing surface exposed to the encapsulating body and facing the bottom wall. The board is disposed on the top wall of the housing and has a pressing surface facing the encapsulating body and the top wall. The plurality of fixing members is configured to fix the board to the top wall of the housing to press the board to the encapsulating body of the piezoelectric assembly, thereby pressing the sensing surface of the piezoelectric sheet to the bottom wall.
    Type: Grant
    Filed: February 20, 2020
    Date of Patent: October 18, 2022
    Assignee: Qian Jun Technology Ltd.
    Inventors: Chi-Shen Lee, Yu-Yen Fu, Po-Chun Yeh, Dong-Fu Chen, Chih-Wen Cheng, Chi-Lin Huang, Yu-Ping Yen
  • Publication number: 20200395529
    Abstract: An ultrasonic sensing device includes a housing, a piezoelectric assembly, a board and a plurality of fixing members. The housing includes a bottom wall, a top wall and a surrounding side wall connected between the top wall and the bottom wall. The piezoelectric assembly includes an encapsulating body and a piezoelectric sheet, wherein at least a portion of the piezoelectric sheet is enclosed by the encapsulating body and has a sensing surface exposed to the encapsulating body and facing the bottom wall. The board is disposed on the top wall of the housing and has a pressing surface facing the encapsulating body and the top wall. The plurality of fixing members is configured to fix the board to the top wall of the housing to press the board to the encapsulating body of the piezoelectric assembly, thereby pressing the sensing surface of the piezoelectric sheet to the bottom wall.
    Type: Application
    Filed: February 20, 2020
    Publication date: December 17, 2020
    Inventors: Chi-Shen Lee, Yu-Yen Fu, Po-Chun Yeh, Dong-Fu Chen, Chih-Wen Cheng, Chi-Lin Huang, Yu-Ping Yen
  • Patent number: 10017385
    Abstract: The present invention provides a catalyst composition for producing hydrogen and preparation method and use thereof, wherein the catalyst composition comprises a catalytic component and a supporter having a pyrochlore structure. By using the catalyst composition of the present invention, carbon deposition can be reduced and the oxidative steam reforming of ethanol could be operated for a long period of time with high ethanol conversion rate and selectivity of hydrogen.
    Type: Grant
    Filed: July 8, 2016
    Date of Patent: July 10, 2018
    Assignee: National Chiao Tung University
    Inventors: Chi-Shen Lee, Yuan-Chia Chang, Ho-Chen Hsieh
  • Publication number: 20170152138
    Abstract: The present invention provides a catalyst composition for producing hydrogen and preparation method and use thereof, wherein the catalyst composition comprises a catalytic component and a supporter having a pyrochlore structure. By using the catalyst composition of the present invention, carbon deposition can be reduced and the oxidative steam reforming of ethanol could be operated for a long period of time with high ethanol conversion rate and selectivity of hydrogen.
    Type: Application
    Filed: July 8, 2016
    Publication date: June 1, 2017
    Inventors: Chi-Shen Lee, Yuan-Chia Chang, Ho-Chen Hsieh
  • Patent number: 9623400
    Abstract: The present invention provides a catalyst for producing hydrogen and a preparing method thereof. The method includes the steps of adding a first metal source, a second metal source, a third metal source and a cerium source into a first organic solvent containing a surfactant to form a colloidal mixture, wherein a metal of the first metal source is a Group IIIB metal; a metal of the second metal source is selected from the group consisting of alkali metals, alkaline earth metals and Group IIIB metals, and a metal of the third metal source is a transition metal; calcining the colloidal mixture to form a metal solid solution; and allowing the metal solid solution to be carried on a carrier to obtain the catalyst. When the catalyst of the present invention is used for an ethanol oxidation reformation, the reaction temperature of the ethanol oxidation reformation can be significantly decreased.
    Type: Grant
    Filed: September 11, 2015
    Date of Patent: April 18, 2017
    Assignee: National Chiao Tung University
    Inventors: Chi-Shen Lee, Ping-Wen Tsai, Ho-Chen Hsieh, Yun-Sheng Chen, Yuan-Chia Chang, Sheng-Feng Weng
  • Publication number: 20160220984
    Abstract: The present invention provides a catalyst for producing hydrogen and a preparing method thereof. The method includes the steps of adding a first metal source, a second metal source, a third metal source and a cerium source into a first organic solvent containing a surfactant to form a colloidal mixture, wherein a metal of the first metal source is a Group IIIB metal; a metal of the second metal source is selected from the group consisting of alkali metals, alkaline earth metals and Group IIIB metals, and a metal of the third metal source is a transition metal; calcining the colloidal mixture to form a metal solid solution; and allowing the metal solid solution to be carried on a carrier to obtain the catalyst. When the catalyst of the present invention is used for an ethanol oxidation reformation, the reaction temperature of the ethanol oxidation reformation can be significantly decreased.
    Type: Application
    Filed: September 11, 2015
    Publication date: August 4, 2016
    Inventors: Chi-Shen Lee, Ping-Wen Tsai, Ho-Chen Hsieh, Yun-Sheng Chen, Yuan-Chia Chang, Sheng-Feng Weng
  • Patent number: 9079165
    Abstract: The instant disclosure relates to a preparation method of ethanol reforming catalyst, comprising the following steps. The first step is mixing a first metal precursor, a second metal precursor, and a third metal precursor with an organic medium to form a mixture. The next step is adding a surfactant to the mixture, and then allowing resting for 3 to 7 days to form a colloidal gel. The next step is calcining the colloidal gel for 1 to 5 hours in a first temperature region of 350° C. to 550° C., and then calcining the colloidal gel for 1 to 5 hours in a second temperature region of 800° C. to 1000° C. to form an ethanol reforming catalyst. The instant disclosure further provides an ethanol reforming catalyst composition.
    Type: Grant
    Filed: April 29, 2013
    Date of Patent: July 14, 2015
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Chi-Shen Lee, Sheng-Feng Weng, Yun-Sheng Chen, Yun-Hsin Wang
  • Publication number: 20140213440
    Abstract: The instant disclosure relates to a preparation method of ethanol reforming catalyst, comprising the following steps. The first step is mixing a first metal precursor, a second metal precursor, and a third metal precursor with an organic medium to form a mixture. The next step is adding a surfactant to the mixture, and then allowing resting for 3 to 7 days to form a colloidal gel. The next step is calcining the colloidal gel for 1 to 5 hours in a first temperature region of 350° C. to 550° C., and then calcining the colloidal gel for 1 to 5 hours in a second temperature region of 800° C. to 1000° C. to form an ethanol reforming catalyst. The instant disclosure further provides an ethanol reforming catalyst composition.
    Type: Application
    Filed: April 29, 2013
    Publication date: July 31, 2014
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: CHI-SHEN LEE, SHENG-FENG WENG, YUN-SHENG CHEN, YUN-HSIN WANG
  • Patent number: 7821017
    Abstract: The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.
    Type: Grant
    Filed: April 20, 2009
    Date of Patent: October 26, 2010
    Assignee: HUGA Optotech Inc.
    Inventors: Chi-Shen Lee, Su-Hui Lin
  • Patent number: 7737453
    Abstract: Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
    Type: Grant
    Filed: May 4, 2007
    Date of Patent: June 15, 2010
    Assignee: Huga Optotech Inc.
    Inventors: Tzong-Liang Tsai, Chi-Shen Lee, Ting-Kai Huang
  • Publication number: 20100140629
    Abstract: The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.
    Type: Application
    Filed: April 20, 2009
    Publication date: June 10, 2010
    Inventors: Chi-Shen LEE, Su-Hui LIN
  • Patent number: 7655575
    Abstract: The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: February 2, 2010
    Assignee: Atomic Energy Council - Institute of Nuclear Energy Research
    Inventors: Ming-Chang Lin, Yen-Chang Tzeng, Shan-Ming Lan, Chi-Shen Lee, Tsun-Neng Yang, Tsong-Yang Wei, Jyh-Perng Chiu, Li-Fu Lin, Der-Jhy Shieh, Ming-Chao Kuo
  • Patent number: 7632694
    Abstract: A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: December 15, 2009
    Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., AU Optronics Corp., Quanta Display Inc., Hannstar Display Corp., Chi Mei Optoelectronics Corp., Industrial Technology Research Institute, Toppoly Optoelectronics Corp.
    Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen
  • Publication number: 20070204905
    Abstract: The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.
    Type: Application
    Filed: October 25, 2006
    Publication date: September 6, 2007
    Inventors: Ming-Chang Lin, Yen-Chang Tzeng, Shan-Ming Lan, Chi-Shen Lee, Tsun-Neng Yang, Tsong-Yang Wei, Jyh-Perng Chiu, Li-Fu Lin, Der-Jhy Shieh, Ming-Chao Kuo
  • Publication number: 20070206651
    Abstract: Disclosed is a light emitting diode structure including a Constructive Oxide Contact Structure contact layer. The light emitting diode structure comprises a substrate, a buffer layer formed on the substrate, a lower confinement layer formed on the buffer layer, a light emitting layer formed on the lower confinement layer, an upper confinement layer formed on the light emitting layer, a Constructive Oxide Contact Structure contact layer formed on the upper confinement layer whose conducting type can be P-type, N-type, or I-type, a first electrode, and a second electrode (transparent electrode). The transparent electrode is formed on the Constructive Oxide Contact Structure contact layer as an anode of the light emitting diode. The first electrode is formed on the lower confinement layer and is spaced apart from the light emitting layer, the upper confinement layer, the contact layer, and the transparent electrode. The first electrode is used as a cathode of the light emitting diode.
    Type: Application
    Filed: May 4, 2007
    Publication date: September 6, 2007
    Inventors: Tzong-Liang Tsai, Chi-Shen Lee, Ting-Kai Huang
  • Patent number: 7211371
    Abstract: A method of manufacturing a TFT array panel for a LCD disclosers that the gate electrode wiring, transparent conducting electrode, and the first electrode of the storage capacity are formed while the first mask is processing. Then, the selective deposition method is used to process the growth of the first metal wiring. This, therefore, can reduce the numbers of the mask processes. Further, the metal deposition with photo-resist lift-off step is used to implement the layout of the second metal wiring for the consequent transmission lines in the manufacturing process. Finally, the process of the passivation layer deposition is used to implement associated circuits of a TFT array panel for a LCD. The TFT array panel for a LCD for manufacturing circuits can simplify the manufacturing process and reduce the cost.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: May 1, 2007
    Assignee: Industrial Technology Research Institute
    Inventors: Chi-Shen Lee, Yung-Fu Wu, Chi-Lin Chen, Cheng-Chung Chen
  • Publication number: 20060202203
    Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
    Type: Application
    Filed: March 15, 2006
    Publication date: September 14, 2006
    Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen
  • Patent number: 7060541
    Abstract: A method of fabricating a thin film transistor (TFT) array involves ion replacement by oxidation-reduction processes for implementing the metal wiring layout of TFT-LCDs. This can overcome metal etching difficulties and achieve automatic alignment. The method of the invention replaces traditional lithographic etching techniciues.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: June 13, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Chi-Shen Lee, Cheng-Chung Chen, Chi-Lin Chen, Chai-Yuan Sheu
  • Patent number: 7045817
    Abstract: The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
    Type: Grant
    Filed: October 15, 2004
    Date of Patent: May 16, 2006
    Assignees: Taiwan TFT LCD Association, Chunghwa Picture Tubes, Ltd., Au Optronics Corp, Quanta Display Inc., Hannstar Display Corp, Chi Mei Optoelectronics Corp., Industrial Technology Research Institute, Toppoly Optoelectronics Corp.
    Inventors: Cheng-Chung Chen, Yu-Chang Sun, Yi-Hsun Huang, Chien-Wei Wu, Shuo-Wei Liang, Chia-Hsiang Chen, Chi-Shen Lee, Chai-Yuan Sheu, Yu-Chi Lee, Te-Ming Chu, Cheng-Hsing Chen
  • Patent number: 7045441
    Abstract: A method for forming a, single-crystal silicon layer on a transparent substrate. A transparent substrate having an amorphous silicon layer formed thereon and a silicon wafer having a hydrogen ion layer formed therein are provided. The silicon wafer is then reversed and laminated onto the amorphous silicon layer so that a layer of single-crystal silicon is between the hydrogen ion layer and the amorphous silicon layer. The laminated silicon wafer and the amorphous silicon layer are then subjected to laser or infrared light to cause chemical bonding of the single crystal silicon layer and the amorphous silicon layer and inducing a hydro-cracking reaction thereby separating the silicon wafer is and the transparent substrate at the hydrogen ion layer, and leaving the single-crystal silicon layer on the transparent substrate.
    Type: Grant
    Filed: July 28, 2003
    Date of Patent: May 16, 2006
    Assignee: Industrial Technology Research Institute
    Inventors: Chich Shang Chang, Chi-Shen Lee, Shun-Fa Huang, Jung Fang Chang, Wen-Chih Hu, Liang-Tang Wang, Chai-Yuan Sheu