Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.

Abstract: A federated learning method includes: providing importance parameters and performance parameters by client devices respectively to a central device, performing a training procedure by the central device, wherein the training procedure includes: selecting target devices from the client devices according to a priority order associated with the importance parameters, dividing the target devices into training groups according to a similarity of the performance parameters, notifying the target devices to perform iterations according to the training groups respectively to generate trained models, transmitting the trained models to the central device, and updating a global model based on the trained models, performing the training procedure again or outputting the global model to the client devices based on a convergence value of the global model and the number of times of performing the training procedure.

Abstract: A transmission device includes a daisy chain structure composed of at least three daisy chain units arranged periodically and continuously. Each of the daisy chain units includes first, second and third conductive lines, and first and second conductive pillars. The first and second conductive lines at a first layer extend along a first direction and are discontinuously arranged. The third conductive line at a second layer extends along the first direction and is substantially parallel to the first and second conductive lines. The first conductive pillar extends in a second direction. The second direction is different from the first direction. A first part of the first conductive pillar is connected to the first and third conductive lines. The second conductive pillar extends in the second direction. A first part of the second conductive pillar is connected to the second and third conductive lines.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

Abstract: The present invention provides antibody or the antigen-binding portion thereof bind to carbohydrate antigen, such as Globo series antigens (e.g. Globo H, SSEA-4 or SSEA-3). Also disclosed herein are pharmaceutical compositions and methods for the inhibition of cancer cells in a subject in need thereof. The pharmaceutical compositions comprise an antibody or an antigen-binding portion thereof and at least one pharmaceutically acceptable carrier.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: A wafer storage device includes a wafer cassette and a carrier plate. The wafer cassette includes a housing and a plurality pairs of retaining members disposed on lateral walls of the housing. The carrier plate is placed into the housing, is supported by one pair of the retaining members, and includes a plate body carrying the wafer thereon, and having a periphery formed with two slots extending respectively in two different radial directions of the wafer. Two positioning members respectively and radially correspond in position to the slots, and abut against an outer rim of the wafer.

Abstract: A wafer storage device includes a wafer cassette and a carrier plate. The wafer cassette includes a housing and a plurality pairs of retaining members disposed on lateral walls of the housing. The carrier plate is placed into the housing, is supported by one pair of the retaining members, and includes a plate body carrying the wafer thereon, and having a periphery formed with two slots extending respectively in two different radial directions of the wafer. Two positioning members respectively and radially correspond in position to the slots, and abut against an outer rim of the wafer.

Abstract: A backlight module including a light source, an optical wavelength conversion film, a first group of optical films, and a second group of optical films is provided. The light source is adapted to emit a first light. The optical wavelength conversion film is adapted to convert the first light into a second light with a different wavelength. The first group of optical films is disposed between the light source and the optical wavelength conversion film. The optical wavelength conversion film is disposed between the first group of optical films and the second group of optical films, wherein a ratio of a transmittance of the second group of optical films for the second light to a transmittance of the first group of optical films for the first light is larger than or equal to 45%. Thus, the backlight module has a uniform light-emitting color.

Abstract: A backlight module includes a light source and an optical film group. The light source is suitable for emitting a first light. The optical film group includes an optical wavelength conversion film, which is adapted to receive the first light and to convert the first light into a second light with different wavelength. The optical wavelength conversion film includes a first portion and a second portion, wherein a quantity of the first light received per unit area of the first portion of the optical wavelength conversion film is greater than a quantity of the first light received per unit area of the second portion of the optical wavelength conversion film. Furthermore, an optical wavelength conversion efficiency of the first portion of the optical wavelength conversion film with respect to the first light is smaller than an optical wavelength conversion efficiency of the second portion of the optical wavelength conversion film with respect to the first light.

Abstract: A backlight module is provided, which includes a plurality of single color light-emitting diodes (LEDs), an optical control film and a plurality of wavelength converting layers. The display panel includes a substrate and circuit elements. The optical control film having a plurality of through holes and being located above the plurality of single color LEDs. The plurality of wavelength converting layers disposed between the optical control film and the plurality of single color LEDs, wherein each of the wavelength converting layers corresponds to one of the single color LEDs and converts a light emitted from the one of the single color LEDs to white light.

Abstract: A backlight module includes a light source and an optical film group. The light source is suitable for emitting a first light. The optical film group includes an optical wavelength conversion film, which is adapted to receive the first light and to convert the first light into a second light with different wavelength. The optical wavelength conversion film includes a first portion and a second portion, wherein a quantity of the first light received per unit area of the first portion of the optical wavelength conversion film is greater than a quantity of the first light received per unit area of the second portion of the optical wavelength conversion film. Furthermore, an optical wavelength conversion efficiency of the first portion of the optical wavelength conversion film with respect to the first light is smaller than an optical wavelength conversion efficiency of the second portion of the optical wavelength conversion film with respect to the first light.

Abstract: A backlight module including a light source, an optical wavelength conversion film, a first group of optical films, and a second group of optical films is provided. The light source is adapted to emit a first light. The optical wavelength conversion film is adapted to convert the first light into a second light with a different wavelength. The first group of optical films is disposed between the light source and the optical wavelength conversion film. The optical wavelength conversion film is disposed between the first group of optical films and the second group of optical films, wherein a ratio of a transmittance of the second group of optical films for the second light to a transmittance of the first group of optical films for the first light is larger than or equal to 45%. Thus, the backlight module has a uniform light-emitting color.

Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.

Abstract: An edge-type backlight module includes a light guide plate and at least one linear light source. The light guide plate has at least one light-incident sidewall, and the linear light source is substantially parallel to the light-incident sidewall. The linear light source includes a carrier and a plurality of solid-state light-emitting devices. The carrier is equally divided into a first, a second, a third, a fourth, and a fifth device mounting regions sequentially arranged along an extending direction of the carrier. The solid-state light-emitting devices are mounted on the device mounting regions and electrically connected to the carrier. An arrangement pitch of the solid-state light-emitting devices on the fourth device mounting region of the device mounting regions is greater than an arrangement pitch of the solid-state light-emitting devices on the other four device mounting regions.

Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.

Abstract: The present invention relates to an apparatus and method for a drop indicator having a magnet installed therein. The drop indicator according to the invention is used to determine whether a product has ever been dropped or impacted, either in delivery or in use, by inspecting changes in the original condition of the magnet caused by the interaction between the magnetic force and the acceleration of gravity, inertia force, and colliding force, etc. generated upon collision. Take a cell phone or a PDA, for example, changes in the indicative material of the drop indicator will help decide whether the faulty product has ever been dropped or impacted in delivery or in use, so that liability can be determined.

Abstract: A CMOS FinFET semiconductor device provides an NMOS FinFET device that includes a compressive stress metal gate layer over semiconductor fins and a PMOS FinFET device that includes a tensile stress metal gate layer over semiconductor fins. A process for forming the same includes a selective annealing process that selectively converts a compressive metal gate film formed over the PMOS device to the tensile stress metal gate film.

Abstract: A nano-indentation ultrasonic detecting system for detecting mechanical properties of a target material. An indentation device, disposed on a surface of the target material, generates an indentation on the surface, obtaining the relation between the Young's modulus and the Poisson's ratio of the target material. An ultrasonic generator is movably disposed on the surface of the target material, generating at least two different ultrasonic signals thereon. An ultrasonic receiver is disposed on the surface of the target material and separated from the ultrasonic generator, receiving the ultrasonic signals. The result of a nano-indentation experiment are applied in the ultrasonic theory and iterated by the ultrasonic experimental data and theory, obtaining the Young's modulus of the target material. The obtained Young's modulus of the target material is substituted back in the result of the nano-indentation experiment, obtaining the Poisson's ratio of the target material.