Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.

Abstract: Systems, methods, circuits, and apparatuses for managing integrated circuits in memory devices are provided. In one aspect of this disclosure, an integrated circuit includes: a latch circuit including a latch and a sensing transistor coupled to the latch, and a compensation circuit coupled to the sensing transistor. The sensing transistor includes a gate terminal coupled to a sensing node and an additional terminal coupled to the compensation circuit, and the compensation circuit is configured to apply a control voltage to the additional terminal to compensate for a variation of a threshold voltage of the sensing transistor.

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first semiconductor die, a second semiconductor die, a molding compound, a heat dissipation module and an adhesive material. The first and second semiconductor dies are different types of dies and are disposed side by side. The molding compound encloses the first and second semiconductor dies. The heat dissipation module is located directly on and in contact with the back sides of the first and second semiconductor dies. The adhesive material is filled and contacted between the heat dissipation module and the molding compound. The semiconductor package has a central region and a peripheral region surrounding the central region. The first and second semiconductor dies are located within the central region. A sidewall of the heat dissipation module, a sidewall of the adhesive material and a sidewall of the molding compound are substantially coplanar.

Abstract: A semiconductor package includes a substrate, a semiconductor device, and a ring structure. The semiconductor device disposed on the substrate. The ring structure disposed on the substrate and surrounds the semiconductor device. The ring structure includes a first portion and a second portion. The first portion bonded to the substrate. The second portion connects to the first portion. A cavity is between the second portion and the substrate.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

Abstract: The present invention provides a flow regulating assembly, including a mandrel, where a regulating chamber is provided in the mandrel; a first end portion of the mandrel is provided with a large air outlet, a side wall of the mandrel is provided with a small air outlet, and the large air outlet has an inner diameter less than that of the regulating chamber; a second end portion of the mandrel is connected to a front end of a J-T slot, and a rear end of the J-T slot is connected to a bypass pipe; a sealing member is arranged in the regulating chamber, and the sealing member has an outer diameter less than or equal to the inner diameter of the regulating chamber and greater than the inner diameter of the large air outlet; the sealing member is connected to one end of a traction member, and the other end of the traction member is led out through the bypass pipe.

Abstract: The disclosure presents a new computer based model framework to predict drug effects over multiple time and spatial scales from the drug chemistry to the cardiac rhythm. The disclosure presents a new computer based model framework to predict drug effects from the level of the receptor interaction to the cardiac rhythm.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first under-bump metallization (UBM) pattern, a first conductive via, and a first dielectric layer laterally covering the first UBM pattern and the first conductive via. Entireties of a top surface and a bottom surface of the first UBM pattern are substantially planar. The first conductive via landing on the top surface of the first UBM pattern includes a vertical sidewall and a top surface connected to the vertical sidewall, and a planarized mark is on the top surface of the first conductive via. A bottom surface of the first dielectric layer is substantially flush with the bottom surface of the first UBM, and a top surface of the first dielectric layer is substantially flush with the top surface of the first conductive via.

Abstract: A method includes dispensing a droplet into a vacuum chamber; firing a pre-pulse laser to the droplet; sensing a first image of a return beam of the pre-pulse laser from the droplet; after firing the pre-pulse laser, firing a main-pulse laser to the droplet, wherein when the main-pulse laser hits the droplet, the droplet is vaporized into a plasma that emits extreme ultraviolet radiation; after sensing the first image and firing the main-pulse laser, sensing a second image of a return beam of the main-pulse laser from the droplet; and adjusting a plasma position in the vacuum chamber according to at least the second image.

Abstract: A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.

Abstract: The present disclosure relates to compositions and methods for the treatment of diseases or disorders (e.g., cancer) with bi-steric inhibitors of mTOR in combination with RAS inhibitors. Specifically, in some embodiments this disclosure includes compositions and methods for inducing apoptosis of tumor cells and/or for delaying, preventing, or treating acquired resistance to RAS inhibitors using bi-steric mTOR inhibitors.

Abstract: A light source for EUV radiation is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel to generate plasma as the EUV radiation. The controller is configured to provide the control signal according to the temperature of the source vessel and droplet positions of the target droplets. When the temperature of the source vessel exceeds a temperature threshold value and a standard deviation of the droplet positions of the target droplets exceeds a first standard deviation threshold value, the controller is configured to provide the control signal to the laser generator, so as to stop providing the first laser pulses.

Abstract: A semiconductor package includes a substrate, a semiconductor device, and a ring structure. The semiconductor device disposed on the substrate. The ring structure disposed on the substrate and surrounds the semiconductor device. The ring structure includes a first portion and a second portion. The first portion bonded to the substrate. The second portion connects to the first portion. A cavity is between the second portion and the substrate.

Abstract: The present invention provides an electrode material and production method thereof. The electrode material comprises: an electrode active material; and an elastic layer coated on the electrode active material, wherein the elastic layer comprises the elements of C, H, O, N, S and the electrode material has the characteristic peaks at mass-to-charge ratio (m/z) 261±0.5, (m/z) 155±0.5, (m/z) 80±0.5, (m/z) 32±0.5, and (m/z) 14±0.5 using TOF-SIMS with the primary ion of Bi1+.

Abstract: The present invention provides a double-layer cryogenic inflatable balloon including an inflatable balloon assembly and a cryogenic balloon assembly. The inflatable balloon assembly includes an inflatable balloon, an outer catheter and a liquid-filling cavity provided with a liquid-filling chamber, the inflatable balloon, the outer catheter and the liquid-filling cavity being communicated with each other. The cryogenic balloon assembly includes a cryogenic balloon, an inner catheter and a fluid-diverting cavity provided with a gas return chamber as well as a gas inlet pipe and an inflation assembly, the cryogenic balloon, the inner catheter and the fluid-diverting cavity being communicated with each other, wherein the cryogenic balloon is located in the inflatable balloon, and the inner catheter is located in the outer catheter.

Abstract: A control system for a vehicle may include one or more processors configured to execute instructions to receive, by one or more modules of the vehicle control system, a request to pair an accessory with the vehicle and determine, by the one or more modules of the vehicle control system, whether the accessory is preconfigured for pairing with the vehicle. In response to determining that the accessory is preconfigured for pairing with the vehicle, the one or more processors are configured to execute instructions to pair, by the one or more modules of the vehicle control system, the accessory with the vehicle and cause, by the one or more modules of the vehicle control system, a display of the vehicle to display a user interface customized for the accessory as paired with the vehicle.

Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.

Abstract: A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.

Abstract: The present disclosure provides methods of fabricating a semiconductor device. A method according to one embodiment includes forming, on a substrate, a first fin formed of a first semiconductor material and a second fin formed of a second semiconductor material different from the first semiconductor material, forming a semiconductor cap layer over the first fin and the second fin, and annealing the semiconductor cap layer at a first temperature while at least a portion of the semiconductor cap layer is exposed.