Abstract: Disclosures of the present invention describe a current sensing device and method, wherein the current sensing device comprises: at least one magnetic sensor, a signal receiving unit and a microprocessor. Particularly, the present invention provides an environmental magnetic field filtering unit and an effective current calculation unit in the microprocessor, such that the microprocessor is able to calculate the value of a current flowing in a specific electrical cable with high accuracy based on a sensing magnetic field outputted from the magnetic sensor.

Abstract: A method for fabricating semiconductor device includes the steps of: forming an inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the IMD layer; forming a bottom electrode layer on the IMD layer, wherein the bottom electrode layer comprises a gradient concentration; forming a free layer on the bottom electrode layer; forming a top electrode layer on the free layer; and patterning the t op electrode layer, the free layer, and the bottom electrode layer to form a magnetic tunneling junction (MTJ).

Abstract: A security certificate management method for a vehicular network node is applied in a vehicular network. A message is received. Whether a certificate in the message is revoked is determined. If the certificate in the message is revoked, a regional certificate revocation list (RCRL) is generated or updated based on the revoked certificate by the vehicular network node, and the RCRL is transmitted into a communication range of the vehicular network node.

Abstract: The present invention discloses a battery internal resistance measuring device and a method thereof, wherein the battery internal resistance measuring device comprises a voltage detecting unit, at least one measurement resistor, at least one switch, and a measurement controller. By means of further explanation, the measurement controller at least comprises a differential value calculating unit for treating a differential value calculation or a slope calculation to each two of adjacent voltage sampling values on a waveform of a discharge voltage signal of the battery, such that the measurement controller can subsequently find out a discharge starting point and a discharge ending point according to data of the differential value calculations or the slope calculations. Eventually, the measurement controller calculates an internal resistance of the battery after picking up an open-circuit voltage and a short-circuit voltage from the discharge starting point and the discharge ending point.

Abstract: The invention discloses a power saving device capable of automatically sensing standby current, which is used in a power device such as a power outlet or other power supply devices for giving the power device ability of electricity saving. When the power saving device normally works, a threshold current setting unit of a controlling and processing module is configured to automatically calculate a threshold current based on current signals sensed by a current detecting unit under different operation modes of at least one electrical device electrically connected to the power device. Moreover, when at least one standby current sensed from the electrical device is determined to be lower than the threshold current, the controlling and processing module immediately switches a switch unit to an open-circuit state, thereby causing the electrical device unable to receive electricity from the power device. Consequently, the power device exhibits the ability of power saving.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A method for fabricating a semiconductor device is provided. A substrate having a dummy gate thereon is prepared. A spacer is disposed on a sidewall of the dummy gate. A source/drain region is disposed adjacent to the dummy gate. A sacrificial layer is then formed on the source/drain region. A cap layer is then formed on the sacrificial layer. A top surface of the cap layer is coplanar with a top surface of the dummy gate. A replacement metal gate (RMG) process is performed to transform the dummy gate into a replacement metal gate. An opening is then formed in the cap layer to expose a top surface of the sacrificial layer. The sacrificial layer is removed through the opening, thereby forming a lower contact hole exposing a top surface of the source/drain region. A lower contact plug is then formed in the lower contact hole.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: In view of drivers cannot equip their vehicles with conventional intelligent battery monitoring system by themselves because the wire connections of the intelligent battery monitoring system are complex, the present invention particularly discloses a non-contact intelligent battery sensing system showing the advantages of simple circuit framework and low manufacturing cost. Since the non-contact intelligent battery sensing system only comprises a magnetic field sensor and a sensor controlling module, it is very easy for the drivers to equip their vehicles with this non-contact intelligent battery sensing system by themselves. To apply the non-contact intelligent battery sensing system, the driver just needs to firstly dispose the magnetic field sensor at one position near to a power line of a battery to be sensed, and then install a sensor controlling application program in his smart phones. Apparently, the non-contact intelligent battery sensing system further shows the advantage of easy to be installed.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an isolation layer, a gate dielectric layer, a tantalum nitride layer, a tantalum oxynitride layer, an n type work function metal layer and a filling metal. The isolation layer is formed on a substrate, and the isolation layer has a first gate trench. The gate dielectric layer is formed in the first gate trench, the tantalum nitride layer is formed on the gate dielectric layer, and the tantalum oxynitride layer is formed on the tantalum nitride layer. The n type work function metal layer is formed on the tantalum oxynitride layer in the first gate trench, and the filling metal is formed on the n type work function metal layer in the first gate trench.

Abstract: A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.

Abstract: The present invention discloses a battery internal resistance measuring device and a method thereof, wherein the battery internal resistance measuring device comprises a voltage detecting unit, at least one measurement resistor, at least one switch, and a measurement controller. By means of further explanation, the measurement controller at least comprises a differential value calculating unit for treating a differential value calculation or a slope calculation to each two of adjacent voltage sampling values on a waveform of a discharge voltage signal of the battery, such that the measurement controller can subsequently find out a discharge starting point and a discharge ending point according to data of the differential value calculations or the slope calculations. Eventually, the measurement controller calculates an internal resistance of the battery after picking up an open-circuit voltage and a short-circuit voltage from the discharge starting point and the discharge ending point.

Abstract: In view of drivers cannot equip their vehicles with conventional intelligent battery monitoring system by themselves because the wire connections of the intelligent battery monitoring system are complex, the present invention particularly discloses a non-contact intelligent battery sensing system showing the advantages of simple circuit framework and low manufacturing cost. Since the non-contact intelligent battery sensing system only comprises a magnetic field sensor and a sensor controlling module, it is very easy for the drivers to equip their vehicles with this non-contact intelligent battery sensing system by themselves. To apply the non-contact intelligent battery sensing system, the driver just needs to firstly dispose the magnetic field sensor at one position near to a power line of a battery to be sensed, and then install a sensor controlling application program in his smart phones. Apparently, the non-contact intelligent battery sensing system further shows the advantage of easy to be installed.

Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.

Abstract: A method for fabricating a semiconductor device is provided. A substrate having a dummy gate thereon is prepared. A spacer is disposed on a sidewall of the dummy gate. A source/drain region is disposed adjacent to the dummy gate. A sacrificial layer is then formed on the source/drain region. A cap layer is then formed on the sacrificial layer. A top surface of the cap layer is coplanar with a top surface of the dummy gate. A replacement metal gate (RMG) process is performed to transform the dummy gate into a replacement metal gate. An opening is then formed in the cap layer to expose a top surface of the sacrificial layer. The sacrificial layer is removed through the opening, thereby forming a lower contact hole exposing a top surface of the source/drain region. A lower contact plug is then formed in the lower contact hole.

Abstract: A semiconductor process is described. A silicon-phosphorus (SiP) epitaxial layer is formed serving as a source/drain (S/D) region. A crystalline metal silicide layer is formed directly on the SiP epitaxial layer and thus prevents oxidation of the SiP epitaxial layer. A contact plug is formed over the crystalline metal silicide layer.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.

Abstract: A semiconductor device includes a substrate, a first gate structure on the substrate, a first spacer adjacent to the first gate structure, a lower contact plug adjacent to the first gate structure and contact the first spacer, and a first overhang feature disposed on an upper end of the first spacer.