Patents by Inventor Chia-Chen Tsai

Chia-Chen Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210226208
    Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.
    Type: Application
    Filed: April 30, 2020
    Publication date: July 22, 2021
    Applicant: National Tsing Hua University
    Inventors: Tri-Rung Yew, Kai-Wei Lan, Chun-Te Ho, Chia-Tung Kuo, Tien-Chi Ji, Yi-Ting Lee, Yun-Chen Tsai
  • Patent number: 10930701
    Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: February 23, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
  • Patent number: 10607891
    Abstract: A manufacturing method of a semiconductor device includes following steps. First gate structures and second gate structures are formed on a first region and a second region of a semiconductor substrate respectively. A spacing distance between the second gate structures is larger than that between the first gate structures. A first ion implantation is preformed to form a first doped region between the first gate structures. A second ion implantation is performed to form a second doped region between the second gate structures. A tilt angle of the second ion implantation is larger than that of the first ion implantation. An implantation dose of the second ion implantation is lower than that of the first ion implantation. An etching process is performed to at least partially remove the first doped region to form a first recess and at least partially remove the second doped region to form a second recess.
    Type: Grant
    Filed: November 6, 2017
    Date of Patent: March 31, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jiun-Lin Yeh, Hsueh-Chih Tseng, Chia-Chen Tsai, Ta-Kang Lo
  • Patent number: 10418513
    Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: September 17, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
  • Publication number: 20190252459
    Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Inventors: Chen OU, Chun-Wei CHANG, Chih-Wei WU, Sheng-Chih WANG, Hsin-Mei TSAI, Chia-Chen TSAI, Chuan-Cheng CHANG
  • Patent number: 10319780
    Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.
    Type: Grant
    Filed: August 11, 2017
    Date of Patent: June 11, 2019
    Assignee: EPISTAR CORPORATION
    Inventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
  • Publication number: 20190115259
    Abstract: A manufacturing method of a semiconductor device includes following steps. First gate structures and second gate structures are formed on a first region and a second region of a semiconductor substrate respectively. A spacing distance between the second gate structures is larger than that between the first gate structures. A first ion implantation is preformed to form a first doped region between the first gate structures. A second ion implantation is performed to form a second doped region between the second gate structures. A tilt angle of the second ion implantation is larger than that of the first ion implantation. An implantation dose of the second ion implantation is lower than that of the first ion implantation. An etching process is performed to at least partially remove the first doped region to form a first recess and at least partially remove the second doped region to form a second recess.
    Type: Application
    Filed: November 6, 2017
    Publication date: April 18, 2019
    Inventors: Jiun-Lin Yeh, Hsueh-Chih Tseng, Chia-Chen Tsai, Ta-Kang Lo
  • Publication number: 20190027643
    Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first crack surface is inclined to the first deteriorated surface or the second deteriorated surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
    Type: Application
    Filed: September 27, 2018
    Publication date: January 24, 2019
    Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
  • Patent number: 10134947
    Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
    Type: Grant
    Filed: January 16, 2018
    Date of Patent: November 20, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
  • Publication number: 20180158980
    Abstract: A compound semiconductor device includes a substrate, including a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface includes a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein a convex region or a concave region is formed by the first deteriorated surface, the first crack surface and the second crack surface, or the second deteriorated surface, the first crack surface and the third crack surface; and wherein the second crack surface or the third crack surface is substantially perpendicular to the top surface or the bottom surface.
    Type: Application
    Filed: January 16, 2018
    Publication date: June 7, 2018
    Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
  • Patent number: 9893231
    Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: February 13, 2018
    Assignee: EPISTAR CORPORATION
    Inventors: Chia Chen Tsai, Chen Ou, Chi Ling Lee, Chi Shiang Hsu
  • Patent number: 9887320
    Abstract: A light-emitting element, includes a substrate; a light-emitting stack formed on the substrate, including a triangular upper surface parallel to the substrate, having three sides and three vertexes; a first electrode formed on the light-emitting stack and located near a first vertex of the three vertexes of the triangular upper surface; and a second electrode formed on the light-emitting stack; including two second electrode pads respectively located near other two vertexes of the three vertexes; and a second electrode extending part extending from the second electrode pads, disposed along the three sides of the triangular upper surface.
    Type: Grant
    Filed: November 3, 2016
    Date of Patent: February 6, 2018
    Assignee: Epistar Corporation
    Inventors: Hsin-Ying Wang, De-Shan Kuo, Wen-Hung Chuang, Tsun-Kai Ko, Chia-Chen Tsai, Chyi-Yang Sheu, Chun-Chang Chen
  • Publication number: 20170365637
    Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.
    Type: Application
    Filed: August 11, 2017
    Publication date: December 21, 2017
    Inventors: Chen OU, Chun-Wei CHANG, Chih-Wei WU, Sheng-Chih WANG, Hsin-Mei TSAI, Chia-Chen TSAI, Chuan-Cheng CHANG
  • Patent number: 9779998
    Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: October 3, 2017
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Publication number: 20170271547
    Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.
    Type: Application
    Filed: March 31, 2017
    Publication date: September 21, 2017
    Inventors: Chia Chen TSAI, Chen OU, Chi Ling LEE, Chi Shiang HSU
  • Patent number: 9768227
    Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.
    Type: Grant
    Filed: August 27, 2014
    Date of Patent: September 19, 2017
    Assignee: EPISTAR CORPORATION
    Inventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
  • Patent number: 9737607
    Abstract: A polymer and a pharmaceutical composition employing the same are disclosed. The polymer includes a first repeating unit, a second repeating unit, and a third repeating unit. In particular, the first repeating unit is the second repeating unit is wherein R1 is C1-6 alkyl group; and the third repeating unit is wherein X is and Y is a hydrophilic polymeric moiety.
    Type: Grant
    Filed: December 24, 2015
    Date of Patent: August 22, 2017
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Jui-Hsiang Chen, Yu-Hua Chen, Chia-Chen Tsai, Tse-Min Teng, Ting-Yu Shih, Chia-Chun Wang, Chia-wei Hong, Jennline Sheu, Hui-Ling Cheng, Shu-Feng Chen, Hung-Jui Huang, Shu-Ling Wang
  • Publication number: 20170221766
    Abstract: A method of manufacturing a semiconductor device is provided in the present invention. Multiple spacer layers are used in the invention to form spacers with different predetermined thickness on different active regions or devices, thus the spacing between the strained silicon structure and the gate structure (SiGe-to-Gate) can be properly controlled and adjusted to achieve better and more uniform performance for various devices and circuit layouts.
    Type: Application
    Filed: March 6, 2017
    Publication date: August 3, 2017
    Inventors: Chia-Chen Tsai, Hung-Chang Chang, Ta-Kang Lo, Tsai-Fu Chen, Shang-Jr Chen
  • Patent number: 9708310
    Abstract: A phenanthroindolizidine and phenanthroquinolizidine alkaloid having a hydroxyl group on the phenanthrene ring thereof was synthesized, which exhibits potent activity as an anticancer agent against, such as breast cancer, lung cancer, and prostate cancer.
    Type: Grant
    Filed: February 4, 2016
    Date of Patent: July 18, 2017
    Assignee: CHINA MEDICAL UNIVERSITY
    Inventors: Ta-Hsien Chuang, Chien-Fu Li, Chia-Chen Tsai, Chi-Fen Chang, Chieh-Yu Peng
  • Publication number: 20170152257
    Abstract: A phenanthroindolizidine and phenanthroquinolizidine alkaloid having a hydroxyl group on the phenanthrene ring thereof was synthesized, which exhibits potent activity as an anticancer agent against, such as breast cancer, lung cancer, and prostate cancer.
    Type: Application
    Filed: February 4, 2016
    Publication date: June 1, 2017
    Applicant: CHINA MEDICAL UNIVERSITY
    Inventors: TA-HSIEN CHUANG, CHIEN-FU LI, CHIA-CHEN TSAI, CHI-FEN CHANG, CHIEH-YU PENG