Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to one embodiment includes an active region including a channel region and a source/drain region adjacent the channel region, a gate structure over the channel region of the active region, a source/drain contact over the source/drain region, a dielectric feature over the gate structure and including a lower portion adjacent the gate structure and an upper portion away from the gate structure, and an air gap disposed between the gate structure and the source/drain contact. A first width of the upper portion of the dielectric feature along a first direction is greater than a second width of the lower portion of the dielectric feature along the first direction. The air gap is disposed below the upper portion of the dielectric feature.

Abstract: Techniques and mechanisms for operating a ferroelectric (FE) circuit element as a cell of a crossbar memory array. In an embodiment, the crossbar memory array comprises a bit line, a word line, and a data storage cell which includes a circuit element that extends to each of the bit line and the word line. The data storage cell is a FE circuit element which comprises terminals, each at a different respective one of the bit line or the word line, and one or more material layers between said terminals. One such layer comprises a FE nitride or a FE oxide. The FE circuit element is operable to selectively enable, or disable, operation as a diode. In another embodiment, the memory array is coupled to circuitry which corresponds a given mode of operation of the FE circuit element to a particular data bit value.

Abstract: Techniques and mechanisms for storing data with a memory cell which comprises a ferroelectric (FE) resistive junction. In an embodiment, a memory cell comprises a transistor and a FE resistive junction structure which is coupled to the transistor. The FE resistive junction structure comprises electrode structures, and a layer of a material which is between said electrode structures, wherein the material is a FE oxide or a FE semiconductor. The FE resistive junction structure selectively provides any of various levels of resistance, each to represent a respective one or more bits. A current flow through the FE resistive junction structure is characterized by thermionic emission through a Schottky barrier at an interface with one of the electrode structures. In another embodiment, the FE resistive junction structure further comprises one or more dielectric layers each between the layer of material and a different respective one of the electrode structures.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

Abstract: A computing device can include a housing defining an opening, a base layer, and a button mechanism positioned in the opening. The button mechanism can include a keycap movable relative to the base layer between an undepressed state and a depressed state, and a dome contacting the keycap, the dome including a first surface and a second surface, opposite the first surface. In the undepressed state, the first surface can be concave and the second surface can be convex. In a partially depressed state, a first portion of the first surface can be convex and a second portion of the first surface can be concave. In the depressed state, the first surface can be convex and the second surface can be concave.

Abstract: The present disclosure concerns methods and compositions related to adoptive cell therapy and its efficacy related to the gut microbiome. In specific cases, it may be determined for an individual whether or not a chimeric antigen receptor (CAR) T-cell therapy will be effective for an individual based on their gut microbiome. An individual may be provided a composition comprising one or more particular microbe compositions based on analysis of the gut microbiome of the individual and prior to administration of CAR T-cell therapy, in specific embodiments.

Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.

Abstract: A method, comprising: detecting an outage of at least one functionality in a live streaming; performing an first operation toward a second user terminal; storing data of the first operation in a database of the first user terminal; and displaying an effect corresponding to the first operation during the outage. The present disclosure may store the data of operation performed by the user terminal during outage and process the operation after the outage is recovered. Therefore, the streamers and viewers may feel interested and satisfied, instead of feeling anxious, and the user experience may be enhanced.

Abstract: A system may include a first acoustic event detection (AED) component configured to detect a predetermined set of acoustic events, and include a second AED component configured to detect custom acoustic events that a user configures a device to detect. The first and second AED components are configured to perform task-specific processing, and may receive as input the same acoustic feature data corresponding to audio data that potentially represents occurrence of one or more events. Based on processing by the first and second AED components, a device may output data indicating that one or more acoustic events occurred, where the acoustic events may be a predetermined acoustic event and/or a custom acoustic event.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiment, a semiconductor device includes a gate structure sandwiched between and in contact with a first spacer feature and a second spacer feature, a top surface of the first spacer feature and a top surface of the second spacer feature extending above a top surface of the gate structure, a gate self-aligned contact (SAC) dielectric feature over the first spacer feature and the second spacer feature, a contact etch stop layer (CESL) over the gate SAC dielectric feature, a dielectric layer over the CESL, a gate contact feature extending through the dielectric layer, the CESL, the gate SAC dielectric feature, and between the first spacer feature and the second spacer feature to be in contact with the gate structure, and a liner disposed between the first spacer feature and the gate contact feature.

Abstract: A system includes a processor, and a display, a reader, a switch, a scale, a memory device, intake-type buttons and output-type buttons that are connected to the processor. The processor controls the display to display an identification number obtained by using the reader to read an identifier. The switch is operated to enable the processor to operate in an intake mode or an output mode. When operating in the intake (output) mode, the processor controls the display to display a symbol corresponding to one of the intake-type (output-type) buttons that is determined to be pressed, and in response to receipt of weight data from the scale, controls the display to display a value of pre-intake (post-output) weight obtained based on the weight data, and stores the value of pre-intake (post-output) weight in the memory device.

Abstract: A display apparatus includes a wireless transmission unit and a display panel. The display panel includes a substrate, a plurality of pixel units and a signal line. The substrate includes a display region and a periphery region. The periphery region surrounds the display region. The pixel units are disposed on the display region. Each of the pixel units includes an active device and a pixel electrode. The active device is electrically connected to the pixel electrode. The signal line is on the periphery region. As viewed from a top view, the signal line has an annular shape having a gap and surrounds the display region.

Abstract: A steam cooking device which includes a pressure accumulating steam boiler and a steaming cabinet is disclosed. The pressure accumulating steam boiler heats liquid water and accumulates a steam having a pressure between 1.1 and 5.0 times atmospheric pressure. The steaming cabinet receives the steam from the pressure accumulating steam boiler to cook a foodstuff contained therein. To raise the temperature of a foodstuff accommodating chamber within the steaming cabinet from a room temperature to a cooking temperature, a WH1 amount of energy is consumed by an electricity-heat conversion unit in the pressure accumulating steam boiler. A foodstuff accommodating chamber within the steaming cabinet has a volume of V1. The steam cooking device satisfies V1/WH1>160. The cooking temperature is between 101° C. and 150° C. and is lower than or equal to the temperature of the steam when the steam is outputted from the pressure accumulating steam boiler.

Abstract: A method for generating stimulation parameters, an electrical stimulation control apparatus and an electrical stimulation system are provided. After receiving a brainwave signal, the brainwave signal is decomposed to obtain a first sub-signal and a second sub-signal. Then, the first sub-signal is analyzed to obtain an intrinsic frequency series, and the second sub-signal is converted to a Boolean signal. Subsequently, the intrinsic frequency series and the Boolean signal, which serve as a set of stimulation parameters, are outputted to the stimulator, enabling the stimulator to generate a stimulus signal.

Abstract: A display apparatus includes a wireless transmission unit and a display panel. The display panel includes a substrate, a plurality of pixel units and a signal line. The substrate includes a display region and a periphery region. The periphery region surrounds the display region. The pixel units are disposed on the display region. Each of the pixel units includes an active device and a pixel electrode. The active device is electrically connected to the pixel electrode. The signal line is on the periphery region. As viewed from a top view, the signal line has an annular shape having a gap and surrounds the display region.

Abstract: The present invention discloses a brain activity analysis method and apparatus, which is based on a nonlinear waveform decomposition technology, wherein the changes of the intrinsic features in brain waves are decomposed and demodulated to extract the modulation signals of the components, including the frequency-modulation signals and the amplitude-modulation signals. The present invention further uses a feature mask to determine whether to proceed further decomposition and demodulation of the extracted modulation signals. If not, the multidimensional changes of the intrinsic features are obtained according to the feature mask. Then, quantitation and identification is performed to obtain the status of brain function. The present invention not only effectively increases the accuracy of the identification but also uses the feature mask to obviously reduce the complexity and the load of computation.

Abstract: A display panel including horizontal signal lines, vertical signal lines intersecting the horizontal signal lines, first transmission lines and second transmission lines is provided. The horizontal signal lines are divided into a first horizontal signal line group and an adjacent second horizontal signal line group. Each of the first and second horizontal signal line groups includes N horizontal lines, wherein N is a positive integer. The first transmission lines are positioned at a first side of the vertical signal lines and respectively connected to the N horizontal signal lines in the first horizontal signal line group in a first tendency. The second transmission lines are positioned at a second, opposite side of the vertical signal lines and respectively connected to the N horizontal signal lines in the second horizontal signal line group in a second tendency. The first tendency is opposite to the second tendency.

Abstract: A method and a system for processing an electroencephalogram (EEG) signal are provided. The method for processing the EEG signal includes: performing a spike detection on the EEG signal to obtain a spike distribution waveform, performing an instantaneous frequency oscillation energy analysis on the EEG signal to obtain multiple energy distribution waveforms; performing a complexity analysis on the EEG signal to obtain a complexity change waveform, obtaining a determination result of a specified neural waveform based on the spike distribution waveform, the energy distribution waveforms, and the complexity change waveform, and outputting the determination result.