Patents by Inventor Chia-Chi Hsiao
Chia-Chi Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240339467Abstract: Some embodiments relate to an IC device, including a first chip comprising a plurality of pixel blocks respectively including one of a first plurality of conductive pads, the plurality of pixel blocks arranged in rows extending in a first direction and columns extending in a second direction perpendicular to the first direction; a second chip bonded to the first chip at a bonding interface, where the second chip comprises a second plurality of conductive pad recessed and contacting the first plurality of conductive pads along the bonding interface; and a first corrugated shield line having outermost edges set-back along the second direction from outermost edges of a first row of the plurality of pixel blocks, the first corrugated shield line being arranged within a first dielectric layer and laterally separating neighboring ones of the first plurality of conductive pads within the first row of the plurality of pixel blocks.Type: ApplicationFiled: April 7, 2023Publication date: October 10, 2024Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Chia-Chi Hsiao, Kuan-Chieh Huang, Wei-Cheng Hsu, Hao-Lin Yang, Yi-Han Liao, Chen-Jong Wang, Dun-Nian Yaung
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Publication number: 20240290811Abstract: The present disclosure relates to an image sensor integrated chip structure. The image sensor integrated chip structure includes one or more logic devices disposed within a first substrate and coupled to a first interconnect structure on the first substrate. A plurality of pixel support devices are disposed along a first-side of a second substrate and coupled to a second interconnect structure on the second substrate. The first substrate is bonded to the second substrate. A plurality of image sensing elements are disposed within a third substrate in pixel regions respectively including two or more of the plurality of image sensing elements. A plurality of transfer gates and a third interconnect structure are disposed on a first-side of the third substrate. The third interconnect structure includes interconnect wires and vias confined between the first-side of second substrate and the first-side of the third substrate.Type: ApplicationFiled: July 3, 2023Publication date: August 29, 2024Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Chia-Chi Hsiao, Chen-Jong Wang, Dun-Nian Yaung
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Publication number: 20240290810Abstract: Various embodiments of the present disclosure are directed towards an image sensor comprising a pixel with a dual-PD layout for enhanced scaling down. The pixel spans a first integrated circuit (IC) die and a second IC die stacked with the first IC die. The pixel comprises a plurality of photodetectors in the first IC die, and further comprises a plurality of pixel transistors split amongst the first IC die and the second IC die. The plurality of photodetectors are grouped into one or more pairs, each having the dual-PD layout. A DTI structure completely and individually surrounds the plurality of photodetectors, and further extends completely through a substrate within which the plurality of photodetectors are arranged. As such, the DTI structure completely separates the plurality of photodetectors from each other.Type: ApplicationFiled: May 26, 2023Publication date: August 29, 2024Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Chia-Chi Hsiao, Chen-Jong Wang, Dun-Nian Yaung
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Publication number: 20240250098Abstract: An integrated chip including a first semiconductor substrate. The first semiconductor substrate includes a doped region. A first photodetector and a second photodetector are in the first semiconductor substrate. A trench isolation layer at least partially surrounds the first photodetector and the second photodetector and extends between the first photodetector and the second photodetector. The trench isolation layer has a first pair of sidewalls. The first semiconductor substrate extends from the first photodetector, between the first pair of sidewalls, to the second photodetector. The doped region is between the first pair of sidewalls. The first photodetector and a first gate partially form a first transistor. The second photodetector and a second gate partially form a second transistor. A second semiconductor substrate is over the first gate and the second gate. A third transistor is along the second semiconductor substrate. The third transistor is coupled to the first transistor.Type: ApplicationFiled: May 22, 2023Publication date: July 25, 2024Inventors: Chi-Hsien Chung, Tzu-Jui Wang, Chia-Chi Hsiao, Chun-Hao Chuang, Chen-Jong Wang, Dun-Nian Yaung
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Publication number: 20230362709Abstract: A method of deriving packet filter component of derived QoS rule and evaluating of packet when there are multiple C-TAGs and/or S-TAGs in Ethernet frame header is proposed. In one novel aspect, for a derived QoS rule, when a DL packet carries multiple C-TAGs or S-TAGs, the UE derives packet filter component of the QoS rule derived from the outermost C-TAG and/or the outermost S-TAG of the DL packet. In another novel aspect, when evaluating a data packet carrying multiple C-TAGs or S-TAGs, the UE/NW evaluates the outermost C-TAG and/or the outermost S-TAG of the data packet, the UE/NW then send the data packet on the corresponding QoS rule of the matched packet filter.Type: ApplicationFiled: April 20, 2023Publication date: November 9, 2023Inventors: Yu-Hsin Lin, Ting-Ying Li, Chia-Chi Hsiao, I-Feng Chen
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Patent number: 9543355Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.Type: GrantFiled: August 10, 2015Date of Patent: January 10, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shou-Shu Lu, Hsun-Ying Huang, Hsin-Jung Huang, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Publication number: 20150349009Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.Type: ApplicationFiled: August 10, 2015Publication date: December 3, 2015Inventors: Shou-Shu Lu, Hsun-Ying Huang, Hsin-Jung Huang, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Patent number: 9142709Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.Type: GrantFiled: August 19, 2014Date of Patent: September 22, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shou-Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
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Patent number: 9123616Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.Type: GrantFiled: July 3, 2014Date of Patent: September 1, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shou-Shu Lu, Hsun-Ying Huang, Hsin-Jung Huang, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Publication number: 20140357010Abstract: A method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface, forming a light sensing region at the first surface of the substrate, forming a doped layer at the second surface of the substrate using a laser annealing process, and performing a chemical mechanical polishing process on the annealed, doped layer.Type: ApplicationFiled: August 19, 2014Publication date: December 4, 2014Inventors: Shou-Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
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Publication number: 20140322857Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.Type: ApplicationFiled: July 3, 2014Publication date: October 30, 2014Inventors: Shou-Shu Lu, Hsun-Ying Huang, Huang-Hsin Jung, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Patent number: 8815723Abstract: A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.Type: GrantFiled: December 22, 2011Date of Patent: August 26, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
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Patent number: 8772895Abstract: Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.Type: GrantFiled: November 28, 2011Date of Patent: July 8, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shou-Shu Lu, Hsun-Ying Huang, Hsin-Jung Huang, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Publication number: 20130134542Abstract: Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.Type: ApplicationFiled: November 28, 2011Publication date: May 30, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shou-Shu Lu, Hsun-Ying Huang, Hsin-Jung Huang, Chun-Mao Chiu, Chia-Chi Hsiao, Yung-Cheng Chang
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Publication number: 20130082342Abstract: The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, a method includes providing a substrate having a first surface and a second surface, the first surface being opposite the second surface; forming a light sensing region at the first surface of the substrate; forming a doped layer at the second surface of the substrate; and after forming the doped layer, polishing the second surface of the substrate.Type: ApplicationFiled: September 30, 2011Publication date: April 4, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang
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Publication number: 20130084660Abstract: A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.Type: ApplicationFiled: December 22, 2011Publication date: April 4, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shou Shu Lu, Hsun-Ying Huang, I-Chang Lin, Chia-Chi Hsiao, Yung-Cheng Chang