Patents by Inventor Chia-En Lee

Chia-En Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11127723
    Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: September 21, 2021
    Assignee: Xiamen Sanan Optoelectronics Technology Co., Ltd.
    Inventors: Zhibai Zhong, Chia-En Lee, Jinjian Zheng, Jiansen Zheng, Chen-Ke Hsu, Junyong Kang
  • Patent number: 11120736
    Abstract: A pixel circuit including a driving transistor, a light emission element, a compensation circuit, a storage capacitor, and a writing circuit is provided. The light emission control circuit is configured to selectively conduct the light emission element to the driving transistor. The compensation circuit is coupled with the light emission control circuit and a control terminal of the driving transistor, and is configured to form a diode-connected structure with the driving transistor. The storage capacitor includes a first terminal and a second terminal. The first terminal of the storage capacitor is coupled with the control terminal of the driving transistor, and the light emission control circuit is configured to selectively conduct the second terminal of the storage capacitor to a first power terminal. The writing circuit is configured to provide different voltages to the first terminal of the storage capacitor and the second terminal of the storage capacitor.
    Type: Grant
    Filed: July 3, 2020
    Date of Patent: September 14, 2021
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Chia-En Wu, Ming-Hsien Lee, Wei-Chia Chiu, Kuan-Yu Chen
  • Publication number: 20210267047
    Abstract: A circuit board disclosed in the present invention includes a substrate and a circuit layer. The circuit layer is formed on a surface of the substrate and includes at least one test circuit line. The test circuit line includes a main segment and a branch segment connected with each other. The branch segment is provided to be contacted with a test equipment for electrical test so as to protect the main segment from breaking during electrical test.
    Type: Application
    Filed: September 25, 2020
    Publication date: August 26, 2021
    Inventors: Chia-En Fan, Hui-Yu Huang, Chih-Ming Peng, Chun-Te Lee
  • Patent number: 11101239
    Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: August 24, 2021
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zhibai Zhong, Chia-en Lee, Jinjian Zheng, Lixun Yang, Chen-ke Hsu, Junyong Kang
  • Patent number: 11043613
    Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: June 22, 2021
    Assignee: Xiamen San'An Optoelectronics Co., Ltd.
    Inventors: Zhibai Zhong, Jinjian Zheng, Lixun Yang, Chia-En Lee, Chen-Ke Hsu, Junyong Kang
  • Publication number: 20210159370
    Abstract: A micro light-emitting device includes a micro light-emitting diode and a light-emitting structure. The micro light-emitting diode includes a semiconductor light-emitting unit that emits an excitation light having a first wavelength. The light-emitting structure is disposed on the micro light-emitting diode, and is configured to be excited by the excitation light to emit an excited light having a second wavelength. The light-emitting structure is a multiple quantum well structure. A display including the micro light-emitting device is also disclosed.
    Type: Application
    Filed: January 6, 2021
    Publication date: May 27, 2021
    Inventors: Chen-ke Hsu, Chia-en Lee, Chun-Yi Wu, Shaohua Huang
  • Publication number: 20210066262
    Abstract: A light emitting assembly includes a substrate, an adhesive layer on the substrate, and a plurality of light emitting units on the adhesive layer. Each of the light emitting units includes a first-type semiconductor layer, a second-type semiconductor layer, an active layer disposed between the first-type and second-type semiconductor layers, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer. A light emitting apparatus including the light emitting assembly is provided. Methods for making the light emitting assembly and the light emitting apparatus are provided.
    Type: Application
    Filed: October 27, 2020
    Publication date: March 4, 2021
    Inventors: TUNG-KAI LIU, SHAO-YING TING, CHEN-KE HSU, CHIA-EN LEE
  • Publication number: 20210013388
    Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 14, 2021
    Inventors: Zhibai ZHONG, Chia-En LEE, Jinjian ZHENG, Zheng WU, Chen-Ke HSU, Junyong KANG
  • Publication number: 20210005782
    Abstract: A micro light-emitting device includes a support structure with a cavity and at least one micro light-emitting element that includes a semiconductor structure accommodated by the cavity, at least one bridge connection member disposed on the semiconductor structure to interconnect the semiconductor structure and the support structure, and a protruding contact member disposed on at least one of the semiconductor structure and the bridge connection member and protruding therefrom to be configured to contact with a transfer means. The device is configured to contact with the transfer means at the protruding contact member of the element. A transfer method using the device is also disclosed.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Shao-ying TING, Junfeng FAN, Chia-en LEE, Chen-ke HSU
  • Publication number: 20200381603
    Abstract: A light emitting device includes a light emitting structure, first and second electrodes, and a shielding layer. The light emitting structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer that are stacked along a stacking direction in such order. The first electrode is electrically connected to the first-type semiconductor layer. The second electrode is electrically connected to the second-type semiconductor layer. The shielding layer is connected to aside of the light emitting structure and is adapted to absorb or reflect incident laser light.
    Type: Application
    Filed: August 17, 2020
    Publication date: December 3, 2020
    Inventors: SHAO-YING TING, JUNFENG FAN, CHIA-EN LEE, CHEN-KE HSU
  • Publication number: 20200335383
    Abstract: A micro device transferring apparatus includes a first conveying mechanism, a carrier unit, a push device and a release device. The first conveying mechanism includes a release tape having a release adhesive, a first roller connected to an end of the release tape, and a conveying device connected to a horizontal section of the release tape to drive the release tape to move in a moving direction. The carrier unit includes a first carrier holding multiple micro devices, and a second carrier for receiving the micro devices. The push device is for pushing the release tape to pick up the micro devices with the release adhesive. The release device is for decomposing the release adhesive to release the micro devices.
    Type: Application
    Filed: June 17, 2020
    Publication date: October 22, 2020
    Inventors: CHEN-KE HSU, ZHIBAI ZHONG, CHIA-EN LEE, JINJIAN ZHENG, ZHENG WU, SHAO-YING TING
  • Publication number: 20200321392
    Abstract: Disclosed is a micro light-emitting component, a micro light-emitting diode, and a transfer layer. The transfer layer has a recess for receiving the micro light-emitting diode to permit the micro light-emitting diode to be retained by the transfer layer, and is transformable from a first state, in which the transfer layer is deformed by the micro light-emitting diode to form the recess, to a second state, in which the micro light-emitting diode received in the recess is retained by the transfer layer. Also disclosed are micro light-emitting component matrix and a method for manufacturing the micro light-emitting component matrix.
    Type: Application
    Filed: June 19, 2020
    Publication date: October 8, 2020
    Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.
    Inventors: Shao-Ying TING, Junfeng FAN, Chia-En LEE, Chen-Ke HSU
  • Publication number: 20200303595
    Abstract: Disclosed is a light-emitting diode including an epitaxial laminate, a first electrode, and a second electrode. The epitaxial laminate includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer. The first type semiconductor layer has an outer surface, and a recess extending inwardly from the outer surface. Also disclosed is a method for transferring the light-emitting diode.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Zheng WU, Chia-En LEE, Chen-Ke HSU
  • Publication number: 20200273848
    Abstract: A mass transfer method includes forming a photosensitive layer on a transfer substrate, heating the photosensitive layer at a temperature for the same to be in a partially cured state, disposing micro semiconductor elements on the photosensitive layer in the partially cured state, partially removing the photosensitive layer to form connecting structures, providing a package substrate and metallic support members, subjecting the metallic support members and the micro semiconductor elements to a eutectic process, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate, and removing the remaining connecting structures from the micro semiconductor elements.
    Type: Application
    Filed: May 15, 2020
    Publication date: August 27, 2020
    Inventors: ZHIBAI ZHONG, CHIA-EN LEE, JINJIAN ZHENG, JIANSEN ZHENG, CHEN-KE HSU, JUNYONG KANG
  • Publication number: 20200258861
    Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.
    Type: Application
    Filed: May 1, 2020
    Publication date: August 13, 2020
    Inventors: Zhibai ZHONG, Chia-en LEE, Jinjian ZHENG, Lixun YANG, Chen-ke HSU, Junyong KANG
  • Publication number: 20200227302
    Abstract: A method for transferring a micro semiconductor element includes the following steps. A substrate, a bonding layer disposed on the substrate, and a supporting member disposed on the bonding layer opposite to the substrate are provided. The supporting member is bonded to a micro semiconductor element for supporting the same. A through hole is provided to extend through the substrate, the bonding layer, and the supporting member so as to forma transfer structure. A separation force is applied via the through hole to separate the micro semiconductor element from the supporting member.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Inventors: ZHENG WU, SHAO-YING TING, CHIA-EN LEE, CHEN-KE HSU
  • Publication number: 20200220047
    Abstract: A micro-LED chip includes an epitaxial layered structure, and first and second electrodes. The epitaxial layered structure includes first-type and second-type semiconductor layers, and a light emitting layer sandwiched therebetween. The first and second electrodes are electrically connected to the first-type and second-type semiconductor layers, respectively. The micro-LED chip has a first distinctive region on an electrode surface of the first electrode. The first distinctive region has a surface morphology different from that of an adjacent region of the electrode surface of the first electrode. A method for manufacturing a micro-LED device including at least one micro-LED chip is also provided.
    Type: Application
    Filed: March 13, 2020
    Publication date: July 9, 2020
    Inventors: Chia-En Lee, Chen-Ke Hsu, Zheng Wu
  • Publication number: 20190319172
    Abstract: A light emitting diode (LED) device includes a light emitting epitaxial layer having opposite first and second surfaces and a plurality of microlenses formed on the first surface. The light emitting epitaxial layer includes a first type semiconductor layer defining the first surface, a second type semiconductor layer defining the second surface, and a light emitting layer disposed between the first and second type semiconductor layers and spaced apart from the first and second surfaces. The microlenses are formed on the first surface and formed of a light transmissible substrate for epitaxial growth of the light emitting epitaxial layer. A method for manufacturing the light emitting diode device is also disclosed.
    Type: Application
    Filed: June 28, 2019
    Publication date: October 17, 2019
    Inventors: ZHIBAI ZHONG, JINJIAN ZHENG, LIXUN YANG, CHIA-EN LEE, CHEN-KE HSU, JUNYONG KANG
  • Patent number: 10297733
    Abstract: A high-voltage light emitting diode and fabrication method thereof, in which, the liquid insulating material layer/the liquid conducting material layer, after curing, is used for insulating/connecting, making the isolated groove between the light emitting units extremely narrow (opening width ?0.4 ?m, such as ?0.3 ?m), which improves single chip output, expands effective light emitting region area and improves light emitting efficiency; the serial/parallel connection yield is improved for this method avoids easy disconnection of wires across a groove with extremely large height difference in conventional high-voltage light emitting diodes; in addition, the manufacturing cost is reduced for the LED can be directly fabricated at the chip fabrication end.
    Type: Grant
    Filed: December 27, 2016
    Date of Patent: May 21, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Hou-jun Wu, Jiansen Zheng, Chen-ke Hsu, Anhe He, Chia-en Lee
  • Patent number: 10283677
    Abstract: A light-emitting diode (LED) structure includes a substrate; a first semiconductor layer on the substrate; a light emitting layer on the first semiconductor layer; a second semiconductor layer on the light emitting layer; and an electrode on the semiconductor layer composed of a body and an extension body, wherein, the electrode extension portion is in a certain angle with the contacting semiconductor layer and separates the electrode body from the light emitted to its top surface and sides with a semi-wrapping structure.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: May 7, 2019
    Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
    Inventors: Xinghua Liang, Hongquan He, Chia-en Lee, Te-Ling Hsia, Su-hui Lin, Chen-ke Hsu