Patents by Inventor Chia-Feng Huang

Chia-Feng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10538545
    Abstract: Disclosed herein are novel compounds of formula (I) and (II), each of which may serve as a reagent to deliver nitric oxide (NO) and a therapeutic agent to treat NO-associated diseases. Also disclosed are a pharmaceutical composition comprising the compound of formula (I) or (II), a composite material comprising the compound of formula (I) or (II), and the uses thereof.
    Type: Grant
    Filed: January 24, 2017
    Date of Patent: January 21, 2020
    Assignee: Chung Yuan Christian University
    Inventors: Tsai-Te Lu, Hsiao-Wen Huang, Chia-Her Lin, Yu-Ting Tseng, Wen-Feng Liaw, Hsi-Ya Huang, Show-Jen Chiou
  • Patent number: 10529711
    Abstract: A method for manufacturing a semiconductor device includes forming one or more fins extending in a first direction over a substrate. The one or more fins include a first region along the first direction and second regions on both sides of the first region along the first direction. A dopant is implanted in the first region of the fins but not in the second regions. A gate structure overlies the first region of the fins and source/drains are formed on the second regions of the fins.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Fu-Huan Tsai, Hsieh-Hung Hsieh, Tzu-Jin Yeh, Han-Min Tsai, Hong-Lin Chu
  • Patent number: 10529911
    Abstract: A piezoelectric actuator includes a suspension plate, a piezoelectric ceramic plate, an outer frame and a bracket. The suspension plate is permitted to undergo a curvy vibration from a middle portion to a periphery portion. The piezoelectric ceramic plate is attached on the suspension plate. When a voltage is applied to the piezoelectric ceramic plate, the suspension plate is driven to undergo the curvy vibration. The outer frame is arranged around the suspension plate. The bracket is connected between the suspension plate and the outer frame for elastically supporting the suspension plate, and includes an intermediate part formed in a vacant space between the suspension plate and the outer frame and in parallel with the outer frame and the suspension plate, a first connecting part arranged between the intermediate part and the suspension plate, and a second connecting part arranged between the intermediate part and the outer frame.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: January 7, 2020
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Publication number: 20200006507
    Abstract: A junction gate field-effect transistor (JFET) includes a substrate, a source region formed in the substrate, a drain region formed in the substrate, a channel region formed in the substrate, and at least one gate region formed in the substrate. The channel region connects the source and drain regions. The at least one gate region contacts one of the source and drain regions at an interface, and the at least one gate region is isolated from the other of the source and drain regions. A dielectric layer covers the interface while exposing portions of the gate region and the one of the source and drain regions.
    Type: Application
    Filed: September 13, 2019
    Publication date: January 2, 2020
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang
  • Patent number: 10522534
    Abstract: Disclosed is a FinFET varactor with low threshold voltage and methods of making the same. A disclosed method includes receiving a semiconductor layer over a substrate and having channel, source, and drain regions. The method includes forming a well in the semiconductor layer to have a first dopant, and implanting a second dopant into the well. The first and second dopants are of opposite doping types. A first portion of the well has a higher concentration of the second dopant than the first dopant. A second portion of the well under the first portion has a higher concentration of the first dopant than the second dopant. The method further includes forming a gate stack over the channel region, and forming source and drain features in the source and drain regions. The first portion of the well electrically connects the source and drain features.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Huan Tsai, Han-Min Tsai, Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang
  • Patent number: 10522535
    Abstract: FinFET varactors having low threshold voltages and methods of making the same are disclosed herein. An exemplary FinFET varactor includes a fin and a gate structure disposed over a portion of the fin, such that the gate structure is disposed between a first source/drain feature and a second source/drain feature that include a first type dopant. The portion of the fin includes the first type dopant and a second type dopant. A dopant concentration of the first type dopant and a dopant concentration of the second type dopant vary from an interface between the fin and the gate structure to a first depth in the fin. The dopant concentration of the first type dopant is greater than the dopant concentration of the second type dopant from a second depth to a third depth in the fin, where the second depth and the third depth are less than the first depth.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Huan Tsai, Han-Min Tsai, Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang
  • Publication number: 20190387825
    Abstract: A head mounted device for a helmet includes a connection module, a flexible bracket, a power supply seat and a function module. While the flexible bracket is moved relative to the connection module, a position of the power supply seat relative to the helmet is adjusted. While the function module is moved relative to the power supply seat, an orientation of the function unit is adjusted.
    Type: Application
    Filed: September 27, 2018
    Publication date: December 26, 2019
    Inventors: Chia-Feng Lee, Chang-Tse Lee, Kai-Wen Cheng, Wei-Lung Huang
  • Publication number: 20190384269
    Abstract: A device and a method for analyzing a manufacturing apparatus are provided. The device includes a storing unit, a detecting unit, a calculating unit and a determining unit. The storing unit is for storing a supply amount of material. The detecting unit is for continuously detecting the manufacturing apparatus once the material is used during whole of a process to obtain a total usage. The calculating unit is for calculating a usage ratio of the total usage to the supply amount. The determining unit is for determining whether the manufacturing apparatus is operated in a usage trouble operation according to the usage ratio.
    Type: Application
    Filed: June 14, 2018
    Publication date: December 19, 2019
    Inventors: Chih-Ping YEN, Te-Sung HUNG, Ming-Kuan KAO, Ming-Feng WANG, Chieh-Ming CHIU, Chin-Hsin HUANG, Pin-Kuei LEE, Chia-Fan TSAI
  • Publication number: 20190377444
    Abstract: A metal mesh touch module that alters the position of at least one auxiliary line disposed at the periphery of mesh units and conceals the auxiliary line by an ink layer that hides the auxiliary line. The display module is partitioned by a first partition line into a function zone and a border zone, the border zone having an ink layer. A touch electrode is disposed on the display module and comprises a plurality of mesh units. A protective covering is disposed on the touch electrode and partitioned by a second partition line into a visible zone and a bezel ink zone, the bezel ink zone comprising a light-blocking material. At least one auxiliary line is disposed on the periphery of the mesh units, electrically connected to the mesh units, and disposed on the touch electrode between the first partition line and the second partition line.
    Type: Application
    Filed: July 18, 2018
    Publication date: December 12, 2019
    Inventors: Chia-Chi YEH, Yue-Feng Yang, Po-Lin Chen, Ya-Yin Cheng, Yen-Heng Huang
  • Patent number: 10504896
    Abstract: A method of determining the reliability of a high-voltage PMOS (HVPMOS) device includes determining a bulk resistance of the HVPMOS device, and evaluating the reliability of the HVPMOS device based on the bulk resistance.
    Type: Grant
    Filed: June 1, 2018
    Date of Patent: December 10, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Feng Huang, Chia-Chung Chen, Tse-Hua Lu
  • Patent number: 10492556
    Abstract: A head mounted device for a helmet includes a connection module, a flexible bracket, a power supply seat and a function module. While the flexible bracket is moved relative to the connection module, a position of the power supply seat relative to the helmet is adjusted. While the function module is moved relative to the power supply seat, an orientation of the function unit is adjusted.
    Type: Grant
    Filed: September 27, 2018
    Date of Patent: December 3, 2019
    Assignee: PRIMAX ELECTRONICS LTD.
    Inventors: Chia-Feng Lee, Chang-Tse Lee, Kai-Wen Cheng, Wei-Lung Huang
  • Publication number: 20190359852
    Abstract: A resin composition comprises a modified polyimide compound, an epoxy resin, and a solvent. The modified polyimide compound has a chemical structural formula of the Ar? represents a group selected from a group consisting of phenyl having a chemical structural formula of diphenyl ether having a chemical structural formula of biphenyl having a chemical structural formula of hexafluoro-2,2-diphenylpropane having a chemical structural formula of benzophenone having a chemical structural formula of and diphenyl sulfone having a chemical structural formula of and any combination thereof, the modified polyimide compound has a degree of polymerization n of about 1 to about 50, the epoxy resin and the modified polyimide compound are in a molar ratio of about 0.1:1 to about 1:1. A modified polyimide compound and a polyimide film are also provided.
    Type: Application
    Filed: August 7, 2019
    Publication date: November 28, 2019
    Inventors: MING-JAAN HO, MAO-FENG HSU, SHOU-JUI HSIANG, NAN-KUN HUANG, YU-WEN KAO, CHIA-YIN TENG, CHING-HSUAN LIN
  • Patent number: 10487821
    Abstract: A miniature fluid control device includes a piezoelectric actuator and a housing. The piezoelectric actuator comprises a suspension plate, an outer frame, at least one bracket and a piezoelectric ceramic plate. The piezoelectric ceramic plate is attached on a first surface of the suspension plate and has a length not larger than that of the suspension plate. The housing includes a gas collecting plate and a base. The gas collecting plate is a frame body with a sidewall and comprises a plurality of perforations. The base seals a bottom of the piezoelectric actuator and has a central aperture corresponding to the middle portion of the suspension plate. When the voltage is applied to the piezoelectric actuator, the suspension plate is permitted to undergo the curvy vibration, the fluid is transferred from the central aperture of the base to the gas-collecting chamber, and exited from the perforations.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: November 26, 2019
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Patent number: 10487820
    Abstract: A miniature pneumatic device includes a miniature fluid control device and a miniature valve device. The miniature fluid control device includes a gas inlet plate, a resonance plate, a piezoelectric actuator and a gas collecting plate. A first chamber is formed between the resonance plate and the piezoelectric actuator. After a gas is fed into the gas inlet plate, the gas is transferred to the first chamber through the resonance plate and then transferred downwardly. Consequently, a pressure gradient is generated to continuously push the gas. The miniature valve device includes a valve plate and a gas outlet plate. After the gas is transferred from the miniature fluid control device to the miniature valve device, the valve opening of the valve plate is correspondingly opened or closed and the gas is transferred in one direction. Consequently, a pressure-collecting operation or a pressure-releasing operation is selectively performed.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: November 26, 2019
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Publication number: 20190355817
    Abstract: Provided is a semiconductor device including a substrate having a first conductivity type, an isolation structure, a well region having the first conductivity type, a gate structure, and doped regions having a second conductivity type. The isolation structure is disposed in the substrate to form an active region of the substrate. The well region is disposed in the active region and surrounds sidewalls of the isolation structure to form a native region in the active region. The gate structure is disposed over the substrate in the native region. The doped regions are disposed respectively in the well region and the native region of the substrate at two sides of the gate structure. A method of fabricating the semiconductor device is also provided.
    Type: Application
    Filed: May 15, 2018
    Publication date: November 21, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Victor Chiang Liang, Chung-Hao Chu
  • Patent number: 10453809
    Abstract: A device includes a semiconductor substrate of a first conductivity type, and a deep well region in the semiconductor substrate, wherein the deep well region is of a second conductivity type opposite to the first conductivity type. The device further includes a well region of the first conductivity type over the deep well region. The semiconductor substrate has a top portion overlying the well region, and a bottom portion underlying the deep well region, wherein the top portion and the bottom portion are of the first conductivity type, and have a high resistivity. A gate dielectric is over the semiconductor substrate. A gate electrode is over the gate dielectric. A source region and a drain region extend into the top portion of the semiconductor substrate. The source region, the drain region, the gate dielectric, and the gate electrode form a Radio Frequency (RF) switch.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: October 22, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Chung Chen, Chi-Feng Huang, Shu Fang Fu, Tzu-Jin Yeh, Chewn-Pu Jou
  • Patent number: 10451051
    Abstract: A miniature pneumatic device includes a miniature fluid control device and a miniature valve device. The miniature fluid control device includes a gas inlet plate, a resonance plate, a piezoelectric actuator and a gas collecting plate. A first chamber is formed between the resonance plate and the piezoelectric actuator. After a gas is fed into the gas inlet plate, the gas is transferred to the first chamber through the resonance plate and then transferred downwardly. Consequently, a pressure gradient is generated to continuously push the gas. The miniature valve device includes a valve plate and a gas outlet plate. After the gas is transferred from the miniature fluid control device to the miniature valve device, the valve opening of the valve plate is correspondingly opened or closed and the gas is transferred in one direction. Consequently, a pressure-collecting operation or a pressure-releasing operation is selectively performed.
    Type: Grant
    Filed: December 28, 2016
    Date of Patent: October 22, 2019
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Shih-Chang Chen, Chi-Feng Huang, Yung-Lung Han, Jia-Yu Liao, Shou-Hung Chen, Che-Wei Huang, Hung-Hsin Liao, Chao-Chih Chen, Jheng-Wei Chen, Ying-Lun Chang, Chia-Hao Chang, Wei-Ming Lee
  • Patent number: 10444622
    Abstract: A method for generating masks for manufacturing of a semiconductor structure includes the following steps. First, a design pattern is provided to a processor. The design pattern includes at least one first pattern and at least two second patterns shorter than the first pattern, wherein two of the second patterns are arranged in a line along an extending direction of the patterns. Then, the second patterns are elongated by the processor such that the two second patterns arranged in the line are separated from each other by a distance equal to a minimum space of the design pattern. The design pattern is divided into a first set of patterns and a second set of patterns by the processor. A first mask is generated by the processor based on the first set of patterns. A second mask is generated by the processor based on the second set of patterns.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: October 15, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Tsung-Yeh Wu, Chia-Wei Huang, Yung-Feng Cheng
  • Patent number: 10428238
    Abstract: A resin composition comprises a modified polyimide compound, an epoxy resin, and a solvent. The modified polyimide compound has a chemical structural formula of the Ar? represents a group selected from a group consisting of phenyl having a chemical structural formula of diphenyl ether having a chemical structural formula of biphenyl having a chemical structural formula hexafluoro-2,2-diphenylpropane having a chemical structural formula of benzophenone having a chemical structural formula of and diphenyl sulfone having a chemical structural formula of and any combination thereof, the epoxy resin and the modified polyimide compound are in a molar ratio of about 0.1:1 to about 1:1. A polyimide film and a method for manufacturing the polyimide film using the resin composition are also provided.
    Type: Grant
    Filed: August 29, 2017
    Date of Patent: October 1, 2019
    Assignee: Zhen Ding Technology Co., Ltd.
    Inventors: Ming-Jaan Ho, Mao-Feng Hsu, Shou-Jui Hsiang, Nan-Kun Huang, Yu-Wen Kao, Chia-Yin Teng, Ching-Hsuan Lin
  • Patent number: 10431582
    Abstract: A semiconductor device includes a fin extending from a substrate, a first source/drain feature, a second source/drain feature, and a gate structure on the fin. A distance between the gate structure and the first source/drain feature is different from a distance between the gate structure and the second source/drain feature.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: October 1, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu Fang Fu, Chi-Feng Huang, Chia-Chung Chen, Victor Chiang Liang, Fu-Huan Tsai