Patents by Inventor Chia-Fu Cheng

Chia-Fu Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10950394
    Abstract: A key switch includes a base, a key cap, a supporting mechanism, a link bar and a buffer member. The key cap is disposed above the base. The supporting mechanism is connected to the key cap and the base to allow the key cap to move relative to the base upwardly and downwardly. The link bar includes a lower linking end. The buffer member and the base are two independent components. The buffer member is disposed on the base and made of material softer than material of the base. A restraining structure is formed on the buffer member. The lower linking end movably passes through the restraining structure. When the key cap moves relative to the base upwardly and downwardly, the lower linking end is driven to move within the restraining structure correspondingly, so as to reduce noise during movement of the lower linking end relative to the base.
    Type: Grant
    Filed: June 16, 2019
    Date of Patent: March 16, 2021
    Assignee: DARFON ELECTRONICS CORP.
    Inventors: Pen-Hui Liao, Chin-Hung Lin, Yen-Hsiao Lin, Hsin-Hung Liu, Chia-Fu Cheng
  • Publication number: 20200403144
    Abstract: A magnetoresistive random access memory (MRAM) structure includes a magnetic tunnel junction (MTJ), and a top electrode which contacts an end of the MTJ. The top electrode includes a top electrode upper portion and a top electrode lower portion. The width of the top electrode upper portion is larger than the width of the top electrode lower portion. A bottom electrode contacts another end of the MTJ. The top electrode, the MTJ and the bottom electrode form an MRAM.
    Type: Application
    Filed: July 9, 2019
    Publication date: December 24, 2020
    Inventors: Kuo-Chih Lai, Yi-Syun Chou, Ko-Wei Lin, Pei-Hsun Kao, Wei Chen, Chia-Fu Cheng, Chun-Yao Yang, Chia-Chang Hsu
  • Patent number: 10756128
    Abstract: An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
    Type: Grant
    Filed: January 10, 2019
    Date of Patent: August 25, 2020
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Ko-Wei Lin, Chin-Fu Lin, Wei-Chuan Tsai, Chun-Yao Yang, Chia-Fu Cheng, Yi-Syun Chou, Wei Chen
  • Publication number: 20200212090
    Abstract: An integrated circuit device includes a complementary metal oxide semiconductor (CMOS) image sensor. The complementary metal oxide semiconductor (CMOS) image sensor includes a P-N junction photodiode, a transistor gate, a polysilicon plug and a stacked metal layer. The P-N junction photodiode is disposed in a substrate. The transistor gate and the polysilicon plug are disposed on the substrate, wherein the polysilicon plug is directly connected to the P-N junction photodiode. The stacked metal layer connects the polysilicon plug to the transistor gate, wherein the stacked metal layer includes a lower metal layer and an upper metal layer, and the lower metal layer includes a first metal silicide part contacting to the polysilicon plug. The present invention also provides a method of fabricating said integrated circuit device.
    Type: Application
    Filed: January 10, 2019
    Publication date: July 2, 2020
    Inventors: Kuo-Chih Lai, Shih-Min Chou, Ko-Wei Lin, Chin-Fu Lin, Wei-Chuan Tsai, Chun-Yao Yang, Chia-Fu Cheng, Yi-Syun Chou, Wei Chen
  • Publication number: 20190304717
    Abstract: A key switch includes a base, a key cap, a supporting mechanism, a link bar and a buffer member. The key cap is disposed above the base. The supporting mechanism is connected to the key cap and the base to allow the key cap to move relative to the base upwardly and downwardly. The link bar includes a lower linking end. The buffer member and the base are two independent components. The buffer member is disposed on the base and made of material softer than material of the base. A restraining structure is formed on the buffer member. The lower linking end movably passes through the restraining structure. When the key cap moves relative to the base upwardly and downwardly, the lower linking end is driven to move within the restraining structure correspondingly, so as to reduce noise during movement of the lower linking end relative to the base.
    Type: Application
    Filed: June 16, 2019
    Publication date: October 3, 2019
    Inventors: Pen-Hui Liao, Chin-Hung Lin, Yen-Hsiao Lin, Hsin-Hung Liu, Chia-Fu Cheng
  • Patent number: 10373779
    Abstract: A key switch includes a base, a key cap, a link bar and a buffer member. A first hook of a first extending arm of the base and a second hook of a second extending arm of the base extend toward opposite directions respectively. An upper linking end of the link bar is movably connected to the key cap. The buffer member is made of material softer than material of the base. When the first hook and the second hook engage with a first engaging portion and a second engaging portion of the buffer member respectively, a recess structure of the buffer member is adjacent to the base to form a restraining structure. A lower linking end of the link bar is movably disposed through the restraining structure. Therefore, the key switch of the present invention has noise reduction capability.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: August 6, 2019
    Assignee: DARFON ELECTRONICS CORP.
    Inventors: Pen-Hui Liao, Chin-Hung Lin, Yen-Hsiao Lin, Hsin-Hung Liu, Chia-Fu Cheng
  • Publication number: 20180350537
    Abstract: A key switch includes a base, a key cap, a link bar and a buffer member. A first hook of a first extending arm of the base and a second hook of a second extending arm of the base extend toward opposite directions respectively. An upper linking end of the link bar is movably connected to the key cap. The buffer member is made of material softer than material of the base. When the first hook and the second hook engage with a first engaging portion and a second engaging portion of the buffer member respectively, a recess structure of the buffer member is adjacent to the base to form a restraining structure. A lower linking end of the link bar is movably disposed through the restraining structure. Therefore, the key switch of the present invention has noise reduction capability.
    Type: Application
    Filed: May 31, 2018
    Publication date: December 6, 2018
    Inventors: Pen-Hui Liao, Chin-Hung Lin, Yen-Hsiao Lin, Hsin-Hung Liu, Chia-Fu Cheng