Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: An IC device includes first through third rows of fin field-effect transistors (FinFETs), wherein the second row is between and adjacent to each of the first and third rows, the FinFETs of the first row are one of an n-type or p-type, the FinFETs of the second and third rows are the other of the n-type or p-type, the FinFETs of the first and third rows include a first total number of fins, and the FinFETs of the second row include a second total number of fins one greater or fewer than the first total number of fins.

Abstract: A substrate assembly is provided, including a first substrate, an active element layer, a plurality of first electrodes, a circuit substrate, and a plurality of second electrodes. The active element layer is disposed on the first substrate. The plurality of first electrodes are disposed on the first substrate and arranged along a first direction. The circuit substrate is partially overlapping the first substrate in a vertical projection direction. The plurality of second electrodes are disposed on the circuit substrate. A distance between the edge of one of the plurality of second electrodes and the edge of one of the plurality of first electrodes is greater than zero in the first direction, and a width of the one of the plurality of first electrodes is different from a width of the one of the plurality of second electrodes.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: Methods for manufacturing an electronic device are provided. A representative method includes providing a substrate. The substrate has an active layer, a first patterned metal layer passing through a passivation layer to electrically connected to the active layer, a second patterned metal layer passing through an insulating layer to electrically connected to the first patterned metal layer, and a metal layer under the second patterned metal layer. A part of the metal layer does not serve as a portion of a thin film transistor, and the part of the metal layer serves as a portion of a gate line. The method includes providing a carrier substrate supporting a plurality of elements, conducting a testing to the elements, transferring the elements from the carrier substrate to the second patterned metal layer of the substrate, and fixing the elements to the substrate.

Abstract: A substrate assembly is provided, including a first substrate and a circuit substrate. The first substrate comprising an edge. An active element layer is disposed on the first substrate. A plurality of first electrodes are disposed on the first substrate and between the edge and an edge of the active element layer, and arranged along a first direction. At least one of the plurality of first electrodes is electrically connected to the active element layer, a first register mark is disposed on the first substrate. The circuit substrate is partially overlapping the first substrate in a vertical projection direction, a plurality of second electrodes is disposed on the circuit substrate.

Abstract: A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.

Abstract: Methods for manufacturing an electronic device are provided. A representative method includes providing a substrate. The substrate has an active layer, a first patterned metal layer passing through a passivation layer to electrically connected to the active layer, a second patterned metal layer passing through an insulating layer to electrically connected to the first patterned metal layer, and a metal layer under the second patterned metal layer. A part of the metal layer does not serve as a portion of a thin film transistor, and the part of the metal layer serves as a portion of a gate line. The method includes providing a carrier substrate supporting a plurality of elements, conducting a testing to the elements, transferring the elements from the carrier substrate to the second patterned metal layer of the substrate, and fixing the elements to the substrate.

Abstract: A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate, the substrate having an insulating layer with an opening and having a metal layer under the opening, wherein a part of the metal layer does not serves as a portion of a thin film transistor; providing a carrier substrate supporting a plurality of light emitting diodes; conducting a testing to the plurality of LEDs on the carrier substrate; transferring at least one of the plurality of LEDs from the carrier substrate to the opening of the substrate; and fixing the at least one of the plurality of LEDs to the substrate.

Abstract: A substrate assembly is provided, including a first substrate and a circuit substrate. The first substrate comprising an edge. An active element layer is disposed on the first substrate. A plurality of first electrodes are disposed on the first substrate and between the edge and an edge of the active element layer, and arranged along a first direction. At least one of the plurality of first electrodes is electrically connected to the active element layer, a first register mark is disposed on the first substrate. The circuit substrate is partially overlapping the first substrate in a vertical projection direction, a plurality of second electrodes is disposed on the circuit substrate.

Abstract: A touch device is provided, including a first substrate and a circuit substrate. The first substrate includes a touch sensing structure and a plurality of first electrodes. The touch sensing structure is disposed on the first substrate. The first electrodes are arranged along a first direction. The first electrodes are disposed on the first substrate and electrically connected to the touch sensing structure, a first gap is formed between two adjacent first electrodes, and a minimum distance between the two adjacent first electrodes is a gap distance. The circuit substrate is partially overlapping the substrate in a vertical projection direction, the circuit substrate including a plurality of second electrodes corresponding to the first electrodes. One of the two adjacent first electrodes has a first electrode side edge facing the first gap. One of the second electrodes has a second electrode side edge located in the first gap.

Abstract: A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.

Abstract: A touch device is provided, including a first substrate and a circuit substrate. The first substrate includes a touch sensing structure and a plurality of first electrodes. The touch sensing structure is disposed on the first substrate. The first electrodes are arranged along a first direction. The first electrodes are disposed on the first substrate and electrically connected to the touch sensing structure, a first gap is formed between two adjacent first electrodes, and a minimum distance between the two adjacent first electrodes is a gap distance. The circuit substrate is partially overlapping the substrate in a vertical projection direction, the circuit substrate including a plurality of second electrodes corresponding to the first electrodes. One of the two adjacent first electrodes has a first electrode side edge facing the first gap. One of the second electrodes has a second electrode side edge located in the first gap.

Abstract: A display apparatus is provided. The display apparatus includes a substrate, a transistor, a metal layer, and a light-emitting diode. The transistor is disposed on the substrate. The metal layer is disposed on the transistor and electrically connected to the transistor, wherein a first distance is between the upper surface of the metal layer and the substrate in a direction perpendicular to the substrate. The light-emitting diode is disposed on the metal layer, wherein the light-emitting diode includes a light-emitting diode body and an electrode, the light-emitting diode body is electrically connected to the metal layer via the electrode, the light-emitting diode body has a first surface and a second surface opposite to the first surface, the first surface and the second surface are parallel to the substrate, and in the direction above, a second distance is between the first surface and the second surface, wherein the ratio of the second distance to the first distance is greater than or equal to 0.

Abstract: A touch device is provided, including a first substrate, a touch sensing structure, a plurality of first electrodes, a first register mark and a circuit board. The touch sensing structure is disposed on the first substrate. The first electrodes are disposed on the first substrate and arranged along a first direction, wherein a portion of the first electrodes are electrically connected to the touch sensing structure. The first register mark is disposed on the first substrate. The circuit board is partially overlapping the first substrate in a vertical projection direction and electrically connected to the portion of the first electrodes.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate, the substrate having an insulating layer with an opening and having a metal layer under the opening, wherein a part of the metal layer does not serves as a portion of a thin film transistor; providing a carrier substrate supporting a plurality of light emitting diodes; conducting a testing to the plurality of LEDs on the carrier substrate; transferring at least one of the plurality of LEDs from the carrier substrate to the opening of the substrate; and fixing the at least one of the plurality of LEDs to the substrate.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate having a plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs); conducting a testing to at least one of the plurality of LEDs on the carrier substrate; transferring at least a portion of the plurality of LEDs from the carrier substrate to the substrate; fixing the portion of the plurality of LEDs to the substrate; providing an insulator over the substrate; and providing a first electrode electrically connected to at least one of the portion of the plurality of LEDs.

Abstract: Methods for manufacturing a display device are provided. A representative method includes: providing a substrate having a plurality of sub-pixel locations; providing a carrier substrate supporting a plurality of light emitting diodes (LEDs); conducting a testing to at least one of the plurality of LEDs on the carrier substrate; transferring at least a portion of the plurality of LEDs from the carrier substrate to the substrate; fixing the portion of the plurality of LEDs to the substrate; providing an insulator over the substrate; and providing a first electrode electrically connected to at least one of the portion of the plurality of LEDs.

Abstract: A touch light emitting diode display device includes: a first substrate having a first surface; a touch signal line projected on the first surface as a touch region; and a first color unit and a second color unit. The first color unit and the second color unit are projected on the first surface as a first region and a second region respectively, wherein the first color unit and the second color unit are of different colors, and a portion of the touch region locates between the first region and the second region.