Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 48% to 55%. The conductive filler has a metal-ceramic compound.

Abstract: An over-current protection device includes a first metal layer, a second metal layer and a heat-sensitive layer laminated therebetween. The heat-sensitive layer exhibits a positive temperature coefficient (PTC) characteristic and includes a first polymer and a conductive filler. The first polymer consists of polyvinylidene difluoride (PVDF), and PVDF exists in different phases such as ?-PVDF, ?-PVDF and ?-PVDF. The total amount of ?-PVDF, ?-PVDF and ?-PVDF is calculated as 100%, and the amount of ?-PVDF accounts for 33% to 42%.

Abstract: An electronic device includes a casing, a circuit board and a grounding assembly. The circuit board has a first surface and a second surface, wherein an input terminal and an output terminal are disposed on the second surface. The grounding assembly comprises a conducting terminal, a first grounding element and a second grounding element. The conducting terminal is disposed on the first surface of the circuit board, and the first grounding element is disposed adjacent to the conducting terminal. The first grounding element penetrates the circuit board and electrically couples with the conducting terminal and the casing, and the second grounding element correspondingly penetrates the circuit board and the conducting element, so that a first portion of the second grounding element electrically couples with the input terminal and the output terminal of the circuit board, and a second portion of the second grounding element electrically couples with the conducting terminal.

Abstract: Disclosed is a powder atomic layer deposition equipment with a quick release function, comprising a vacuum chamber, a shaft sealing device, and a driving unit connected to the shaft sealing device. The vacuum chamber is connected to the shaft sealing device, and an enclosed space is formed between the vacuum chamber and the shaft sealing device. At least one air extraction line is located in the shaft sealing device and fluidly connected to the enclosed space, the air extraction line being used in pumping gas out from the enclosed space to fix the vacuum chamber to the shaft sealing device so that the drive unit rotates the vacuum chamber via the shaft sealing device to facilitate the formation of a uniform thin film on powder surface. When the pumping stops, the vacuum chamber can be quickly released from the shaft sealing device to improve the process efficiency and convenience of use.

Abstract: A semiconductor mixed material comprises an electron donor, a first electron acceptor and a second electron acceptor. The first electron donor is a conjugated polymer. The energy gap of the first electron acceptor is less than 1.4 eV. At least one of the molecular stackability, ?-?*stackability, and crystallinity of the second electron acceptor is smaller than the first electron acceptor. The electron donor system is configured to be a matrix to blend the first electron acceptor and the second electron acceptor. The present invention also provides an organic electronic device including the semiconductor mixed material.

Abstract: A hinge structure is configured to be disposed between a first body and a second body. The hinge structure includes a first shaft assembly, at least two guiding members, a second shaft assembly, and two supporting plates. Each guiding member includes a first end and a second end, the first end is bent to form a sliding groove. The second shaft assembly is disposed in the sliding groove. The two supporting plates are connected to the first body and the second body, respectively, one end of each supporting plate is sleeved on the first shaft assembly, and another end of each supporting plate is fixed to the second end of, when the first body and the second body are closed to or opened with each other, the second shaft assembly is displaced relative to the guiding member. An electronic device is provided according to the present disclosure.

Abstract: A hinge structure includes two hinge arms, two shaft gears, at least one first elastic piece, and at least one second elastic piece. Each hinge arm includes a central shaft. Each of the two shaft gears is connected to the central shaft, each shaft gear includes an extending portion, the groove is defined on the extending portion. Each first elastic piece includes two elastic arms, a first connecting portion, and two protrusions. The elastic arms are disposed on opposite sides of the first connecting portion, the elastic arms and the first connecting portion cooperatively form a first opening, the extending portion passes through the first opening, each protrusion is disposed on each elastic arm. Each second elastic piece is sleeved on the extending portion. The protrusions are configured to be accommodated in the groove. A terminal device is provided according to the present disclosure.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: A clothing pattern making management system, applicable to a server and used for allowing users to connect and manage a plurality of clothing pattern making data via a network, at least including a database and a login and authority management module, a search and viewing module, a connection and upload module, and a management and download module. Through the data connection to a business system, the system is able to facilitate the users to perform data upload and management in order to achieve proper preservation and management of a large quantity of pattern drawings for various styles of clothes and for all stages, and to achieve the effects of learning exchange and passing on of techniques.

Abstract: Management methods and systems for electric vehicle charging equipment are provided. A server is used to determine whether a specific electric vehicle charging equipment is in an abnormal state, wherein the specific electric vehicle charging equipment is bound to a specific account and can only accept a charging request from the specific account. When the specific electric vehicle charging equipment is in an abnormal state, the server activates a charging replacement mechanism for the specific account. The server sends an abnormality notification message to a mobile device corresponding to the specific account via a network, wherein the abnormality notification message is used to notify a specific user of the specific account that the specific electric vehicle charging equipment is currently abnormal, and the charging replacement mechanism for the specific account in a predetermined period.

Abstract: Management methods and systems for electric vehicle charging equipment are provided. An application program of a mobile device scans a quick response code of an electric vehicle charging equipment to send a binding request to a server via a first network. In response to the binding request, the server determines whether the electric vehicle charging equipment has been bound to any account. When the electric vehicle charging equipment is not bound to any account, the server provides an interface to the mobile device to set account information. The server creates a specific account based on the account information, and sets the electric vehicle charging equipment to only accept a charging request from the specific account, wherein the application program is linked to the specific account.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

Abstract: A connector device is provided, including a first housing, a circuit assembly, a second housing, and a connector. The circuit assembly is disposed on the first housing, and has a first connecting port and a second connecting port. The second housing is detachably engaged with the first housing. The connector is disposed on the second housing, and has an opening and a terminal. When the first housing is engaged with the second housing and the opening faces the first direction, the terminal is electrically connected to the first connecting port. When the first housing is engaged with the second housing and the opening faces the second direction, the terminal is electrically connected to the second connecting port. The first direction is different from the second direction.

Abstract: A high electron mobility transistor (HEMT) is disclosed. The HEMT includes a substrate, a first epitaxial layer disposed on the substrate, a second epitaxial layer disposed on the first epitaxial layer, a third epitaxial layer disposed on the second epitaxial layer, and a gate disposed on the third epitaxial layer. An upper portion of the first epitaxial layer has a plurality of first recesses. The second epitaxial layer partially fills the first recesses and surrounding a plurality of first air slits in the first recesses.

Abstract: A receiver front-end circuit and an operating method thereof are disclosed. The receiver front-end circuit includes a common-mode suppression circuit and a rear-stage circuit. The common-mode suppression circuit is used to receive an external input common-mode voltage signal and perform common-mode noise suppression processing on the external input common-mode voltage signal, and then output an internal input common-mode voltage signal. The rear-stage circuit is coupled to the common-mode suppression circuit and used to receive the internal input common-mode voltage signal. The dynamic swing of the internal input common-mode voltage signal is smaller than the dynamic swing of the external input common-mode voltage signal.

Abstract: An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Abstract: A clothing pattern making management system, applicable to a server and used and used for allowing users to connect and manage a plurality of clothing pattern making data via a network, at least includes a database and a login and authority management module, a search and viewing module, a connection and upload module, a management and download module. Through the data connection to a business system, the system is able to facilitate the users to perform data upload and management in order to achieve proper preservation and management of large quantity of pattern drawings for various styles of clothes and for all stages, and to achieve the effects of learning exchange and passing on of techniques.

Abstract: A connector device is provided, including a first housing, a circuit assembly, a second housing, and a connector. The circuit assembly is disposed on the first housing, and has a first connecting port and a second connecting port. The second housing is detachably engaged with the first housing. The connector is disposed on the second housing, and has an opening and a terminal. When the first housing is engaged with the second housing and the opening faces the first direction, the terminal is electrically connected to the first connecting port. When the first housing is engaged with the second housing and the opening faces the second direction, the terminal is electrically connected to the second connecting port. The first direction is different from the second direction.