Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a fin disposed in a first region of the semiconductor device, channel members disposed in a second region of the semiconductor device and stacked in a vertical direction, first and second metal gates disposed on a top surface of the fin, a third metal gate wrapping around each of the channel members, a first implant region in the fin with a first conductivity type, and a second implant region in the fin with a second conductivity opposite the first conductivity type. The fin includes first and second type epitaxial layers alternatingly disposed in the vertical direction. The first and second type epitaxial layers have different material compositions. The first type epitaxial layers and the channel members have the same material composition.

Abstract: A base station (BS) and a method for wireless communication are provided. The method includes transmitting a first radio resource control (RRC) configuration that configures a radio link monitoring configuration that includes a beam failure detection (BFD) timer and a beam failure indication (BFI) count threshold. The first RRC configuration enables a user equipment (UE) to: start or restart the BFD timer by a medium access control (MAC) entity of the UE each time a BFI is received from a lower layer; and initiate a beam failure recovery (BFR) procedure upon determining that the number of the received BFIs is greater than or equal to the BFI count threshold. The method further includes transmitting a second RRC configuration that reconfigures the radio link monitoring configuration. The second RRC configuration enables the UE to set the BFI counter to zero in response to receiving the second RRC configuration.

Abstract: A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.

Abstract: A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.

Abstract: A cantilever force sensor with relatively lower On-Force is disclosed, which comprises a top stack, a bottom stack, and a spacer. The first spacer is configured between the top stack and the bottom stack and configured in a first side of the force sensor. A second side, opposite to the first side, of the top stack, is cantilevered from the bottom stack. When the force sensor is depressed from the top side, the second side of the top stack moves down using the first spacer as a fulcrum. Since the cantilevered side can be easily depressed down so that the On-Force for the force sensor is reduced and hence a force sensor with a relatively higher sensitivity is created.

Abstract: A cantilever force sensor with relatively lower On-Force is disclosed, which comprises a top stack, a bottom stack, and a spacer. The first spacer is configured between the top stack and the bottom stack and configured in a first side of the force sensor. A second side, opposite to the first side, of the top stack, is cantilevered from the bottom stack. When the force sensor is depressed from the top side, the second side of the top stack moves down using the first spacer as a fulcrum. Since the cantilevered side can be easily depressed down so that the On-Force for the force sensor is reduced and hence a force sensor with a relatively higher sensitivity is created.

Abstract: A method for rendering a multimedia data stream tamper-proof and of evidential value when recorded in a block chain system reads and decodes the multimedia data stream to obtain multiple frames of data arranged in sequence, and calculates a hash value of each frame of data of the multimedia data stream. One or more items of data are selected from the multiple frames of data based on a predetermined rule and information as to properties of the one or more items of data is uploaded to the block chain system for recording purposes. A device for applying the method to a multimedia data stream is also disclosed.

Abstract: A semiconductor structure includes: a semiconductor substrate; a first source/drain feature and a second source/drain feature over the semiconductor substrate; and semiconductor layers extending longitudinally in a first direction and connecting the first source/drain feature and the second source/drain feature. The semiconductor layers are spaced apart from each other in a second direction perpendicular to the first direction. The semiconductor structure further includes inner spacers each between two adjacent semiconductor layers; metal oxide layers interposing between the inner spacers and the semiconductor layers; and a gate structure wrapping around the semiconductor layers and the metal oxide layers.

Abstract: A cantilever force sensor with relatively lower On-Force is disclosed, which comprises a top stack, a bottom stack, and a spacer. The first spacer is configured between the top stack and the bottom stack and configured in a first side of the force sensor. A second side, opposite to the first side, of the top stack, is cantilevered from the bottom stack. When the force sensor is depressed from the top side, the second side of the top stack moves down using the first spacer as a fulcrum. Since the cantilevered side can be easily depressed down so that the On-Force for the force sensor is reduced and hence a force sensor with a relatively higher sensitivity is created.

Abstract: A method for rendering a multimedia data stream tamper-proof and of evidential value when recorded in a block chain system reads and decodes the multimedia data stream to obtain multiple frames of data arranged in sequence, and calculates a hash value of each frame of data of the multimedia data stream. One or more items of data are selected from the multiple frames of data based on a predetermined rule and information as to properties of the one or more items of data is uploaded to the block chain system for recording purposes. A device for applying the method to a multimedia data stream is also disclosed.

Abstract: A currency trading method based on blockchain applied in an electronic device sets up a smart contract on the blockchain to receive a first setting instruction and a quantity of first transactions from a transacting sender, and receives a second setting instruction and a quantity of second transactions from a transacting receiver. The smart contract further generates target transactions according to a first exchange rate, the quantity of the first transactions, and a second exchange rate and the quantity of the second transactions, and sends the target transactions to a third-party platform for mediation of the target transactions. In response to a redemption instruction sent by the third-party platform, the smart contract sends the second tokens corresponding to the quantity of the first transactions to the transacting sender to a transacting receiver according to the quantity of the second transactions and the second exchange rate.

Abstract: A method for establishing a link for a keyword within a page or document being currently displayed includes detecting at least one keyword in the current display of the electronic device, and uploading the at least one keyword to a server. The method further includes receiving a link of relevant data of each keyword from the server, and displaying the link of the relevant data corresponding to each keyword in the currently displayed page of the display screen.

Abstract: The present invention relates to a camera, comprising: a base; a cylindrical hollow main body mounted to the base; an electric motor supported on a support, with an external gear being mounted on an output shaft of the electric motor; a camera head assembly, comprising a cylindrical housing, a lens module, and a motherboard for controlling the electric motor and the lens module; and an internal gear meshed with the external gear. One of the support and the internal gear is mounted in a fixed manner to the base or in the hollow main body, and the other one is mounted in a fixed manner to the camera head assembly.

Abstract: A fast response force sensor is disclosed. The fast response force sensor comprises a solid-state bonding (SSB) spacer and piezo material therein. The SSB spacer is sandwiched between a top stack and a bottom stack of the force sensor. The SSB spacer maintains a fixed relative position between a top stack and a bottom stack of the force sensor when a fixed force is applied or removed. The SSB spacer is in solid state and shall not be significantly deformed while being depressed by a user, and therefore the response time of an output signal is vastly determined by the properties of the piezo material of the force sensor when a force is applied against the force sensor. Therefore, a fast response force sensor can respond quickly to a force applied against it.

Abstract: A fast response force sensor is disclosed. The fast response force sensor comprises a solid-state bonding (SSB) spacer and piezo material therein. The SSB spacer is sandwiched between a top stack and a bottom stack of the force sensor. The SSB spacer maintains a fixed relative position between a top stack and a bottom stack of the force sensor when a fixed force is applied or removed. The SSB spacer is in solid state and shall not be significantly deformed while being depressed by a user, and therefore the response time of an output signal is vastly determined by the properties of the piezo material of the force sensor when a force is applied against the force sensor. Therefore, a fast response force sensor can respond quickly to a force applied against it.

Abstract: A force sensing structure and a force sensing device including the same are provided. The force sensing structure is configured to detect a proximity of an object to the force sensor from an upside and a force applied by the object to the force touch sensor. The force sensing structure includes a first electrode and a first capacitance material layer. The first capacitance material layer is disposed adjacent to the first electrode. When the object approaches the force touch sensor, the force touch sensor is configured to detect the proximity of the object according to a first capacitance variation, and when the object contacts the force sensor and deforms of the first capacitance material layer, the force touch sensor is configured to detect the force applied by the object according to a second capacitance variation.

Abstract: A force sensing module is disclosed. One of the embodiments disclosed a first force sensor, and a second force sensor stacked on a top surface of the first force sensor; a signal processing circuit electrically coupled to the first signal force sensor and the second force sensor; when a force is applied on a top surface of the stack, a corresponding force signal is generated; wherein a strength of the force signal is related to an amount of the force applied against the stack.

Abstract: An embedded button without having gap is disclosed according to the present invention. The button area just bends to operate instead of moving back and forth to operate within a through hole so that no water, vapor, or dust shall enter into the device. One of the embodiment comprises an inner bump configured on an inner side of an outer frame; a pressure switch is configured under the inner bump and touches the bottom surface of the bump; and an activating electrical signal is triggered when the button area is pressed by user with a force exceeding a threshold force level from outside surface of the outer frame of the electronic device.

Abstract: A green headphone is disclosed. A force sensor is configured between a speaker cover and a cushion of the headphone. The headphone switches on automatically to play audio when a user puts the headphone on his head. The headphone switches off automatically to stop playing audio when a user puts the headphone off his head, the power consumption is saved.