Abstract: A read operation for a memory device. In response to an input address indicating to read data from a different page, a selected word line, first and second global bit lines and a selected first bit line group are precharged. A first cell current flowing through the selected word line, the first and the selected first bit line groups is generated. A first reference current flowing through the second global bit line group is generated. A first half page data is read based on the first cell current and the first reference current. The selected word line, the first and the second global bit lines are kept precharged. A second cell current flowing through the selected word line is generated. A second reference current is generated. A second half page data is read based on the second cell current and the second reference current.

Abstract: A sensing method for a memory is provided. The memory includes: a memory cell; a reference circuit generating a reference voltage and a clamp voltage; and a current supplying circuit receiving the clamp voltage to develop a cell current passing through the memory cell to form a cell voltage, wherein the cell voltage is used for incorporating with the reference voltage to determine the information stored in the memory.

Abstract: In a quick-release fixing structure for an electronic equipment, the electronic equipment includes a plurality of holes and a snap slot, and the quick-release fixing structure includes a substrate, a turning element and a plurality of fixing elements. The substrate includes a plurality of grooves and a port, and each groove includes a first groove hole and a second groove hole interconnected to the first groove hole, and the second groove hole is greater than the first groove hole. The turning element is coupled to the substrate and includes a bump exposed from the port and snapped into the snap slot. Each fixing element is passed through each first groove hole and fixed to each hole. The turning element can be turned to push the electronic equipment to move each fixing element into each second groove hole, and separate the electronic equipment from the substrate.

Abstract: The present invention relates to a filter device, the filter device includes a housing provided with a through-hole; and a filter structure includes a signal line; a wave filter connected to the signal line, the size of the periphery of the wave filter smaller than the diameter of the through-hole; a connecter connected to one end of the signal line and connected electrically with the wave filter; wherein the filter structure is arranged from the outside of the housing through the through-hole correspondingly, so that the signal line and the wave filter are arranged at the inside of the housing and the connecter is fixed at the through-hole. Hence, the filter structure is locked and fixed optionally from the outside or from the inside of the housing to increase the convenience of the whole assembly.

Abstract: A read operation for a memory device. In response to an input address indicating to read data from a different page, a selected word line, first and second global bit lines and a selected first bit line group are precharged. A first cell current flowing through the selected word line, the first and the selected first bit line groups is generated. A first reference current flowing through the second global bit line group is generated. A first half page data is read based on the first cell current and the first reference current. The selected word line, the first and the second global bit lines are kept precharged. A second cell current flowing through the selected word line is generated. A second reference current is generated. A second half page data is read based on the second cell current and the second reference current.

Abstract: A first redundant column is used to repair multiple defects in an array of memory cells. The defects include at least a first defect and a second defect in different main columns of a plurality of main columns in the array. However, all of the multiple defects repaired by the first redundant column are not required to be in different main columns. The array is arranged into a plurality of rows accessed by row addresses and the plurality of main columns accessed by column addresses.

Abstract: The present invention is related to a precursor for no-carrier-added fluorine-18 labeled ethacrynic acid, N-(4-[18F]fluorobutyl)-Ethacrynic amide([18F]FBuEA) and the preparation method for HPLC non-radioactive standards. Its chemical structure is shown in the following: In the precursor, R1 represents a protective group for the amide functional group; R2 represents leaving group; or R1 represents carboxyl group, R2 represents p-tosyloxy, methane sulfonyloxy group or trifluoromethane sulfonyloxy group or bromine (Br). For the HPLC non-radioactive standards, R1 represents a protective group for the amide functional group and hydrogen, R2 represents fluorine.

Abstract: A cellular phone. The cellular phone comprises a connector, a first memory module, a second memory module, and a controller. The connector is used for physically connecting the cellular phone to an external device. The first memory module stores phone data. The second memory module stores application data received from the external device. The controller determines whether the connector is connected to the external device. If the connector is not connected to the external device, access right of both the first and second memory modules is granted exclusively to the cellular phone. If the connector is connected to the external device, access right of the first memory is granted exclusively to the cellular phone, and access right of the second memory module is granted exclusively to the external device.

Abstract: A lightning arrestor apparatus is disclosed, which is comprised of a connecting piece, a first coaxial cable, a second coaxial cable and a grounding lead. Said connecting piece comprises a first connecting end and second connecting end on both sides of said connecting piece. Said first coaxial cable comprises the first terminal to connect said first connecting end for transmitting signal. Said second coaxial cable comprises the second terminal to connect said second connecting end for transmitting signal above-mentioned. Said grounding lead is installed under said connecting piece. The exteriors of said first terminal and said first connecting end have been further wrapped with a first protection coating. The exteriors of said second terminal and said second connecting end have been further wrapped with a second protection coating. Thereby the invention not only can reduce the transmission loss, but also can avoid inappropriate assembly and moisture intrusion.

Abstract: The present invention provides an electrochemical biosensor. The biosensor includes a substrate; a metal layer disposed on the substrate, wherein a first end of the metal layer is formed with a reaction region by a working electrode and a reference electrode provided on the metal layer, the reaction region is applied with an enzyme so that an electrical response is generated when the enzyme and a test sample form a chemical reaction, and a second end of the metal layer is provided with an integrated information unit to provide both test sample information and coding information.

Abstract: A memory circuit with relatively high reading speed and relatively low switching noise is provided. The memory circuit includes an output buffer device having a first input receiving a data signal having a first voltage level, a second input receiving a pre-set voltage having a second voltage level and an output outputting the data signal, and a pre-set circuit constructed by a pair of MOSFETs and providing the pre-set voltage to the second input before the output buffer device receives the data signal. The pre-set circuit receives a control signal activating the pair of MOSFETs at the same time, and when the output buffer device receives the data signal, a voltage level of the second input is swung from the second level to the first voltage level.

Abstract: Methods for managing mass storage devices are provided. An embodiment of a method for managing mass storage devices performed by an electronic device comprises the following steps. It is detected that the electronic device has connected to a computer system. One mass storage driver is selected from multiple mass storage drivers. Information regarding that the selection of the mass storage driver is transmitted to the computer system, thereby directing the computer system to activate the selected mass storage driver.

Abstract: A cellular phone. The cellular phone comprises a connector, a first memory module, a second memory module, and a controller. The connector is used for physically connecting the cellular phone to an external device. The first memory module stores phone data. The second memory module stores application data received from the external device. The controller determines whether the connector is connected to the external device. If the connector is not connected to the external device, access right of both the first and second memory modules is granted exclusively to the cellular phone. If the connector is connected to the external device, access right of the first memory is granted exclusively to the cellular phone, and access right of the second memory module is granted exclusively to the external device.

Abstract: A cellular phone. The cellular phone comprises a connector, a first memory module, a second memory module, and a controller. The connector is used for physically connecting the cellular phone to an external device. The first memory module stores phone data. The second memory module stores application data received from the external device. The controller determines whether the connector is connected to the external device. If the connector is not connected to the external device, access right of both the first and second memory modules is granted exclusively to the cellular phone. If the connector is connected to the external device, access right of the first memory is granted exclusively to the cellular phone, and access right of the second memory module is granted exclusively to the external device.

Abstract: Methods for selectively activating one of multiple functions provided by a mobile phone are provided. An embodiment of a method for selectively activating one of multiple functions comprises the following steps. That the mobile phone has been coupled to a computer system is detected. A first interface is displayed to facilitate selection of a first function from the functions. That the first function is selected is detected by the first interface. At least one software module is configured to activate the first function, thereby the computer system is directed to employ the mobile phone as a first external electronic device corresponding to the first function.

Abstract: Methods for selectively activating one of multiple functions provided by a mobile phone are provided. An embodiment of a method for selectively activating one of multiple functions comprises the following steps. The coupling of the mobile phone to a computer system is detected. A first interface is displayed to facilitate selection of a first function from the functions. The selection of the first function is detected by the first interface. At least one software module is configured to activate the first function, thereby the computer system is directed to employ the mobile phone as a first external electronic device corresponding to the first function.

Abstract: A memory circuit with relatively high reading speed and relatively low switching noise is provided. The memory circuit includes an output buffer device having a first input receiving a data signal having a first voltage level, a second input receiving a pre-set voltage having a second voltage level and an output outputting the data signal, and a pre-set circuit constructed by a pair of MOSFETs and providing the pre-set voltage to the second input before the output buffer device receives the data signal. The pre-set circuit receives a control signal activating the pair of MOSFETs at the same time, and when the output buffer device receives the data signal, a voltage level of the second input is swung from the second level to the first voltage level.

Abstract: A non-volatile memory and an operating method thereof. The non-volatile memory includes a memory cell array, a first dummy cell array, an address decoding unit and a synchronous programming circuit. The memory cell array includes a first memory cell, and the first dummy cell array includes a first dummy cell. The first dummy cell is adjacent to a first side of a memory cell array and corresponds to the first memory cell. The address decoding unit receives an address signal for decoding. When the address signal is a relative address of the first dummy cell, the synchronous programming circuit controls the first dummy cell and the first memory cell to be synchronously programmed.

Abstract: A light indicator includes a reflector element, a transparent element, and an emitting element. The transparent element includes a light incident surface and a light emitting surface. The emitting element is arranged symmetrically on two sides of the transparent element so that light beams emitted from the emitting element can enter into the transparent element though the light incident surface and the light emitting surface can emit uniform light beams. The reflector element surrounds the transparent element and the emitting element to ensure that part of light beams can enter into the transparent element through the light incident surface after being reflected one or more times. The light indicator of the invention has a uniform light distribution and a high utilization rate of light.

Abstract: A non-volatile memory and an operating method thereof. The non-volatile memory includes a memory cell array, a first dummy cell array, an address decoding unit and a synchronous programming circuit. The memory cell array includes a first memory cell, and the first dummy cell array includes a first dummy cell. The first dummy cell is adjacent to a first side of a memory cell array and corresponds to the first memory cell. The address decoding unit receives an address signal for decoding. When the address signal is a relative address of the first dummy cell, the synchronous programming circuit controls the first dummy cell and the first memory cell to be synchronously programmed.