Patents by Inventor Chia-Ta Chang

Chia-Ta Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11502661
    Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: November 15, 2022
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Chun-Ju Wei, Kuo-Lung Weng
  • Publication number: 20220216053
    Abstract: Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration.
    Type: Application
    Filed: March 22, 2022
    Publication date: July 7, 2022
    Inventors: Cheng-Ta Wu, Chia-Ta Hsieh, Kuo Wei Wu, Yu-Chun Chang, Ying Ling Tseng
  • Publication number: 20220209741
    Abstract: A bulk acoustic wave resonator and a formation method thereof are provided. The method for forming the bulk acoustic wave resonator includes forming a sacrificial structure on a substrate. A seed layer is formed on the sacrificial structure. A bottom electrode is formed on the seed layer. A piezoelectric layer is formed on the bottom electrode. A top electrode is formed on the piezoelectric layer. The sacrificial structure is removed to form a cavity. The seed layer is etched through the cavity.
    Type: Application
    Filed: December 28, 2020
    Publication date: June 30, 2022
    Inventors: Kuo-Lung WENG, Chia-Ta CHANG, Tzu-Sheng HSIEH, Chun-Ju WEI
  • Publication number: 20220209502
    Abstract: A vertical-cavity surface-emitting laser includes a substrate. A first mirror is disposed on the substrate. An active layer is disposed on the first mirror. An oxide layer is disposed on the active layer. An aperture is disposed on the active layer. The aperture is surrounded by the oxide layer. A second mirror is disposed on the aperture and the oxide layer. A high-contrast grating is disposed on the second mirror. The high-contrast grating includes a first grating element and a second grating element, and the first grating element and the second grating element are spaced apart from each other with an air gap therebetween. A passivation layer is disposed on the high-contrast grating. A first thickness of the passivation layer on a top surface of the first grating element is greater than a second thickness of the passivation layer on a first sidewall of the first grating element.
    Type: Application
    Filed: November 16, 2021
    Publication date: June 30, 2022
    Inventors: Yu-Chun CHEN, Yu-Hsuan HUANG, Chia-Ta CHANG
  • Publication number: 20220202442
    Abstract: A computer-assisted needle insertion system and a computer-assisted needle insertion method are provided. The computer-assisted needle insertion method includes: obtaining a first machine learning (ML) model and a second ML model; obtaining a computed tomography (CT) image and a needle insertion path, generating a suggested needle insertion path according to the first ML model, the CT image, and the needle insertion path, and instructing a needle to approach a needle insertion point on a skin of a target, wherein the needle insertion point is located on the suggested needle insertion path; obtaining a breath signal of the target, and estimating whether a future breath state of the target is normal according to the second ML model and the breath signal; and outputting a suggested needle insertion period according to the breath signal in response to determining that the future breath state is normal.
    Type: Application
    Filed: November 23, 2021
    Publication date: June 30, 2022
    Applicant: Industrial Technology Research Institute
    Inventors: Po-An Hsu, Chih-Chi Chang, Chih-Wei Chien, Chia-Pin Li, Kun-Ta Wu, Wei-Zheng Lu
  • Publication number: 20210281233
    Abstract: A bulk acoustic wave filter comprises a substrate, an insulating layer disposed on the substrate and having a first cavity and a second cavity formed therein, a first bulk-acoustic-wave-resonance-structure disposed on the first cavity and a second bulk-acoustic-wave-resonance-structure disposed on the second cavity. The first bulk-acoustic-wave-resonance-structure comprises a first bottom electrode disposed on the first cavity, a first top electrode disposed on the first bottom electrode, a first piezoelectric layer portion sandwiched between the first top electrode and the first bottom electrode, and a first frequency tuning structure disposed between the first cavity and the first bottom electrode. The second bulk-acoustic-wave-resonance-structure comprises a second bottom electrode disposed on the second cavity, a second top electrode disposed on the second bottom electrode, a second piezoelectric layer portion sandwiched between the second top electrode and the second bottom electrode.
    Type: Application
    Filed: May 26, 2021
    Publication date: September 9, 2021
    Inventors: CHIA-TA CHANG, CHUN-JU WEI, KUO-LUNG WENG
  • Patent number: 11070185
    Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.
    Type: Grant
    Filed: February 3, 2020
    Date of Patent: July 20, 2021
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Chun-Ju Wei, Kuo-Lung Weng
  • Publication number: 20200177148
    Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.
    Type: Application
    Filed: February 3, 2020
    Publication date: June 4, 2020
    Inventors: CHIA-TA CHANG, CHUN-JU WEI, KUO-LUNG WENG
  • Publication number: 20200169238
    Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.
    Type: Application
    Filed: February 3, 2020
    Publication date: May 28, 2020
    Inventors: CHIA-TA CHANG, CHUN-JU WEI, KUO-LUNG WENG
  • Patent number: 10608608
    Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: March 31, 2020
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Chun-Ju Wei, Kuo-Lung Weng
  • Patent number: 10594286
    Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: March 17, 2020
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Chun-Ju Wei, Kuo-Lung Weng
  • Patent number: 10256329
    Abstract: A HBT on a GaAs substrate is presented, wherein its base comprises a first base layer comprising IniGa1-iAs with an Indium content i with a slope s1 and a second base layer on the emitter side comprising InjGa1-jAs with an Indium content j with a slope s2, and an average of s1 is half of the average of s2 or smaller; or the base comprises a first base layer comprising InmGa1-mAs with an Indium content m and a second base layer on the emitter side comprising InnGa1-nAs with an Indium content n, and an average of n is larger than the m at a second base layer side; or the base comprises a first base layer pseudomorphic to GaAs with a bulk lattice constant larger than GaAs, and the emitter comprises a first emitter layer pseudomorphic to GaAs with a bulk lattice constant smaller than GaAs.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: April 9, 2019
    Assignee: Win Semiconductors Corp.
    Inventors: Shinichiro Takatani, Jui-Pin Chiu, Chia-Ta Chang
  • Patent number: 10250228
    Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.
    Type: Grant
    Filed: February 10, 2017
    Date of Patent: April 2, 2019
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Chih-Feng Chiang, Tzu-Sheng Hsieh
  • Patent number: 10097156
    Abstract: A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: October 9, 2018
    Assignee: WIN SEMICONDUCTORS CORP.
    Inventors: Chia-Ta Chang, Re Ching Lin, Yung-Chung Chin, Chih-Feng Chiang
  • Publication number: 20180191327
    Abstract: A method for forming cavity of bulk acoustic wave resonator comprising following steps of: forming a sacrificial epitaxial structure mesa on a compound semiconductor substrate; forming an insulating layer on the sacrificial epitaxial structure mesa and the compound semiconductor substrate; polishing the insulating layer by a chemical-mechanical planarization process to form a polished surface; forming a bulk acoustic wave resonance structure on the polished surface, which comprises following steps of: forming a bottom electrode layer on the polished surface; forming a piezoelectric layer on the bottom electrode layer; and forming a top electrode layer on the piezoelectric layer, wherein the bulk acoustic wave resonance structure is located above the sacrificial epitaxial structure mesa; and etching the sacrificial epitaxial structure mesa to form a cavity, wherein the cavity is located under the bulk acoustic wave resonance structure.
    Type: Application
    Filed: April 3, 2017
    Publication date: July 5, 2018
    Inventors: CHIA-TA CHANG, CHUN-JU WEI, KUO-LUNG WENG
  • Publication number: 20180191322
    Abstract: A method for fabricating bulk acoustic wave resonator with mass adjustment structure, comprising following steps of: forming a sacrificial structure mesa on a substrate; etching the sacrificial structure mesa such that any two adjacent parts have different heights, a top surface of a highest part of the sacrificial structure mesa is coincident with a mesa top extending plane; forming an insulating layer on the sacrificial structure mesa and the substrate; polishing the insulating layer to form a polished surface; forming a bulk acoustic wave resonance structure including a top electrode, a piezoelectric layer and a bottom electrode on the polished surface; etching the sacrificial structure mesa to form a cavity; the insulating layer between the polished surface and the mesa top extending plane forms a frequency tuning structure, the insulating layer between the mesa top extending plane and the cavity forms a mass adjustment structure.
    Type: Application
    Filed: August 23, 2017
    Publication date: July 5, 2018
    Inventors: CHIA-TA CHANG, CHUN-JU WEI, KUO-LUNG WENG
  • Publication number: 20180109240
    Abstract: A bulk acoustic wave resonator with a mass adjustment structure comprises a supporting layer, a lower metal layer, a piezoelectric layer, an upper metal layer and a mass adjustment structure. The supporting layer is formed on a substrate. The supporting layer has a cavity, and the cavity has a top-inner surface. The lower metal layer is formed on the supporting layer. The piezoelectric layer is formed on the lower metal layer. The upper metal layer is formed on the piezoelectric layer. An acoustic wave resonance region is defined by an overlapping region of projections of the upper metal layer, the piezoelectric layer, the lower metal layer, the supporting layer and the cavity. The acoustic wave resonance region is divided into a peripheral region and a central region. The mass adjustment structure comprises a peripheral mass adjustment structure formed on the top-inner surface within the peripheral region.
    Type: Application
    Filed: February 10, 2017
    Publication date: April 19, 2018
    Inventors: Chia-Ta CHANG, Chih-Feng CHIANG, Tzu-Sheng HSIEH
  • Publication number: 20170294893
    Abstract: A resonance structure of bulk acoustic wave resonator comprises a bottom electrode, a dielectric layer and a top electrode, wherein the dielectric layer is formed on the bottom electrode; the top electrode is formed on the dielectric layer. A resonance area is defined by the overlapping area of the projection of the bottom electrode, the dielectric layer and the top electrode. The resonance area has a contour. The contour includes at least three curved edges and is formed by connecting the at least three curved edges. Each curved edge is concave to a geometric center of the contour.
    Type: Application
    Filed: August 4, 2016
    Publication date: October 12, 2017
    Inventors: Chia-Ta CHANG, Re Ching LIN, Yung-Chung CHIN, Chih-Feng CHIANG
  • Publication number: 20170069739
    Abstract: A HBT on a GaAs substrate is presented, wherein its base comprises a first base layer comprising IniGa1-iAs with an Indium content i with a slope s1 and a second base layer on the emitter side comprising IniGa1-jAs with an Indium content j with a slope s2, and an average of s1 is half of the average of s2 or smaller; or the base comprises a first base layer comprising InmGa1-mAs with an Indium content m and a second base layer on the emitter side comprising InnGa1-nAs with an Indium content n, and an average of n is larger than the m at a second base layer side; or the base comprises a first base layer pseudomorphic to GaAs with a bulk lattice constant larger than GaAs, and the emitter comprises a first emitter layer pseudomorphic to GaAs with a bulk lattice constant smaller than GaAs.
    Type: Application
    Filed: September 4, 2015
    Publication date: March 9, 2017
    Inventors: SHINICHIRO TAKATANI, JUI-PIN CHIU, CHIA-TA CHANG
  • Patent number: D705458
    Type: Grant
    Filed: May 27, 2013
    Date of Patent: May 20, 2014
    Assignees: United Win (China) Technology Ltd, Wintek Corporation
    Inventors: Ming-Chuan Lin, Hsuan Wang, Bo Yu, Zhi-Ting Ye, Yu-Liang Chow, Chang-Wei Yu, Chia-Ta Chang, Chin-Wen Lo, Tso-Wei Liao, Wen-Hsiao Huang, Shih-Cheng Wang, Ju-Fen Yang