Patents by Inventor Chia-Wei Ho

Chia-Wei Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220384245
    Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
    Type: Application
    Filed: August 5, 2022
    Publication date: December 1, 2022
    Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen
  • Patent number: 11508807
    Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.
    Type: Grant
    Filed: November 25, 2020
    Date of Patent: November 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu Ho, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei Wu, Zhiqiang Wu
  • Publication number: 20220367612
    Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 17, 2022
    Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu Ho, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei Wu, Zhiqiang Wu
  • Publication number: 20220345141
    Abstract: The present invention discloses a DAC method having signal calibration mechanism is provided. Operation states of current sources are controlled to generate an output analog signal by a DAC circuit according to a codeword of an input digital signal. An echo signal is generated by an echo transmission circuit according to the output analog signal. The codeword is mapped to generate an offset signal by a calibration circuit according to a codeword offset mapping table. The offset signal is processed to generate an echo-canceling signal by an echo-canceling circuit. By a calibration parameter calculation circuit, offset amounts are generated according to a difference between the echo signal and the echo-canceling signal, the offset amounts are grouped to perform statistic operation according to the operation states and current offset values are calculated according to calculation among groups and converted to codeword offset values to update the codeword offset mapping table.
    Type: Application
    Filed: April 25, 2022
    Publication date: October 27, 2022
    Inventors: HSUAN-TING HO, LIANG-WEI HUANG, YUN-CHIH TSAI, CHIA-LIN CHANG
  • Patent number: 11482450
    Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: October 25, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen
  • Publication number: 20220321169
    Abstract: A method includes: generating a first signal according to a digital signal; filtering the first signal according to first filter coefficients of first filter to generate a second signal; adding a first reference signal with the second signal to generate a third signal; performing digital-to-analog conversion according to the first and third signals to generate and output an echo signal; performing analog-to-digital conversion according to the echo signal to generate a fourth signal; generating a fifth signal according to the digital signal and the fourth signal; and updating the first filter coefficients according to the fifth signal.
    Type: Application
    Filed: April 1, 2022
    Publication date: October 6, 2022
    Inventors: HSUAN-TING HO, LIANG-WEI HUANG, PO-HAN LIN, CHIA-LIN CHANG
  • Publication number: 20220311000
    Abstract: An anode material for a secondary battery is provided. The anode material for the secondary battery includes a metal oxide containing four or more than four elements, or an oxide mixture containing four or more than four elements. The metal oxide includes cobalt-copper-tin oxide, silicon-tin-iron oxide, copper-manganese-silicon oxide, tin-manganese-nickel oxide, manganese-copper-nickel oxide, or nickel-copper-tin oxide. The oxide mixture includes the oxide mixture containing cobalt, copper and tin, the oxide mixture containing silicon, tin and iron, the oxide mixture containing copper, manganese and silicon, the oxide mixture containing tin, manganese and nickel, the oxide mixture containing manganese, copper and nickel, or the oxide mixture containing nickel, copper and tin.
    Type: Application
    Filed: June 15, 2022
    Publication date: September 29, 2022
    Applicant: National Tsing Hua University
    Inventors: Tri-Rung Yew, Kai-Wei Lan, Chun-Te Ho, Chia-Tung Kuo, Tien-Chi Ji, Yi-Ting Lee, Yun-Chen Tsai
  • Publication number: 20220276690
    Abstract: Embodiments of a system, method, and memory storage device for managing performance optimization of applications executed by an Information Handling System (IHS) are described. In an illustrative, non-limiting embodiment, an IHS may include computer-executable instructions to receive telemetry data associated with an operating behavior of the IHS. Using the telemetry data, the IHS generates a profile recommendation from the received telemetry data using a machine learning (ML) service, and adjusts a core stall management mechanism of a second processor to optimize a performance of the IHS. The second processor performs at least a portion of the operating behavior of the IHS.
    Type: Application
    Filed: March 1, 2021
    Publication date: September 1, 2022
    Applicant: Dell Products, L.P.
    Inventors: Chia-Chi Ho, Thomas Alexander Shows, Ya-Chen Tsai, Chung-Wei Wang, Yi-Chung Cheng
  • Patent number: 11428586
    Abstract: The present invention is related to a non-contact infrared thermometer, which includes at least three infrared sensors, an indicating unit and a microprocessor. The at least three infrared sensors are arranged in serial to receive an infrared ray at a target area. The indicating unit is configured to emit visible light on the target area to indicate a received infrared region. The microprocessor is configured to receive and process the infrared ray measured by the at least three infrared sensors to provide at least three temperature values, thereby determining that the object to be measured is an organism.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: August 30, 2022
    Assignee: MICROLIFE CORPORATION
    Inventors: Chia-Chen Ho, Shih-Wei Huang
  • Publication number: 20220255583
    Abstract: An echo canceller system includes a data transmitter circuit and an echo canceller circuit. The data transmitter circuit is configured to receive a transmitted signal. The echo canceller circuit includes a first filter. The first filter is configured to generate a first filtered signal according to the transmitted signal and a filter coefficient vector. The filter coefficient vector is updated according to a high-frequency leakage process. The echo canceller circuit is further configured to generate an echo cancelling signal according to the first filtered signal. The data transmitter circuit is further configured to generate an output signal according to a received signal and the echo cancelling signal.
    Type: Application
    Filed: July 8, 2021
    Publication date: August 11, 2022
    Inventors: Hsuan-Ting HO, Liang-Wei HUANG, Kuei-Ying LU, Chia-Lin CHANG
  • Publication number: 20220246226
    Abstract: A power circuit is adapted for providing a programming voltage to an electronic fuse circuit, and includes a pass transistor of a P-type metal-oxide-semiconductor transistor, a buffer circuit, and a bulk voltage control circuit. The pass transistor includes a bulk electrode, a gate electrode, a first source/drain electrode receiving a system high voltage, and a second source/drain electrode connected to a bit line. The buffer circuit provides a control voltage to the gate electrode of the pass transistor. The pass transistor is turned on during a programming operation and turned off during a reading operation. The bulk voltage control circuit independently provides a bulk voltage to the bulk electrode. A last-stage buffer of the buffer circuit is also activated by the bulk voltage to control the pass transistor during the reading operation of the electronic fuse circuit. A method for providing power to an electronic fuse circuit is also provided.
    Type: Application
    Filed: April 7, 2021
    Publication date: August 4, 2022
    Applicant: United Microelectronics Corp.
    Inventors: Chia Wei Ho, Min Chia Wang, Chung Ming Lin, Jin Pang Chi
  • Patent number: 11373879
    Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.
    Type: Grant
    Filed: September 12, 2020
    Date of Patent: June 28, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Tung-Kai Chen, Ching-Hsiang Tsai, Kao-Feng Liao, Chih-Chieh Chang, Chun-Hao Kung, Fang-I Chih, Hsin-Ying Ho, Chia-Jung Hsu, Hui-Chi Huang, Kei-Wei Chen
  • Patent number: 11133247
    Abstract: A semiconductor device includes a first dielectric layer over a substrate, the first dielectric layer including a first dielectric material extending from a first side of the first dielectric layer distal from the substrate to a second side of the first dielectric layer opposing the first side; a second dielectric layer over the first dielectric layer; a conductive line in the first dielectric layer, the conductive line including a first conductive material, an upper surface of the conductive line being closer to the substrate than an upper surface of the first dielectric layer; a metal cap in the first dielectric layer, the metal cap being over and physically connected to the conductive line, the metal cap including a second conductive material different from the first conductive material; and a via in the second dielectric layer and physically connected to the metal cap, the via including the second conductive material.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: September 28, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Wei Ho, Chun-Wei Hsu, Chi-Hsiang Shen, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, William Weilun Hong, Liang-Guang Chen, Kei-Wei Chen
  • Publication number: 20210297620
    Abstract: A measurement apparatus for a camera module includes a constant current driver, a light emitting element, a resistor, a light receiving element, an amplifier, and a control unit. The constant current driver is coupled to the light emitting element. The light receiving element is coupled to the resistor for generating an output current. When the camera module moves toward the light receiving element and the light emitting element, the relative output current generated from the light receiving element will be changed according to a distance between the camera module and the light receiving element. The motor characteristics (e.g., posture difference, resonant frequency) of the camera module may be measured by such method as a result.
    Type: Application
    Filed: March 18, 2020
    Publication date: September 23, 2021
    Inventor: Chia-Wei Ho
  • Patent number: 11121028
    Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.
    Type: Grant
    Filed: September 13, 2019
    Date of Patent: September 14, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
  • Publication number: 20210272818
    Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
    Type: Application
    Filed: May 18, 2021
    Publication date: September 2, 2021
    Inventors: Yi-Sheng LIN, Chi-Jen LIU, Chi-Hsiang SHEN, Te-Ming KUNG, Chun-Wei HSU, Chia-Wei HO, Yang-Chun CHENG, William Weilun HONG, Liang-Guang CHEN, Kei-Wei CHEN
  • Patent number: 11094555
    Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: August 17, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wei Hsu, Chi-Jen Liu, Kei-Wei Chen, Liang-Guang Chen, William Weilun Hong, Chi-Hsiang Shen, Chia-Wei Ho, Yang-Chun Cheng
  • Publication number: 20210183688
    Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
    Type: Application
    Filed: February 26, 2021
    Publication date: June 17, 2021
    Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen
  • Patent number: 11037799
    Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.
    Type: Grant
    Filed: May 1, 2019
    Date of Patent: June 15, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Yi-Sheng Lin, Chi-Jen Liu, Kei-Wei Chen, Liang-Guang Chen, Te-Ming Kung, William Weilun Hong, Chi-Hsiang Shen, Chia-Wei Ho, Chun-Wei Hsu, Yang-Chun Cheng
  • Patent number: 10937691
    Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.
    Type: Grant
    Filed: September 3, 2019
    Date of Patent: March 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia Hsuan Lee, Chun-Wei Hsu, Chia-Wei Ho, Chi-Hsiang Shen, Li-Chieh Wu, Jian-Ci Lin, Chi-Jen Liu, Yi-Sheng Lin, Yang-Chun Cheng, Liang-Guang Chen, Kuo-Hsiu Wei, Kei-Wei Chen