Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

Abstract: An electronic device that facilitate locating connection port thereof is described. The main portion has a lateral surface. The connection port is disposed on the lateral surface. The identification symbol is disposed on the lateral surface. The light source is disposed within the main portion and operable to emit light through the identification symbol so as to project a pattern of the identification symbol on a surface, which supports the main portion. The connection port on a lateral surface of the electronic device is located according to where the pattern of the identification symbol is located.

Abstract: A foldable electronic device includes a main portion, a display portion, a gear set, a saw teeth member and a connection member. The main portion has a top surface. A keyboard is pivotally connected with the top surface of the main portion. The display portion is pivotally connected with the main portion by a rotation shaft such that the display portion is operable to be folded against or unfolded away the top surface. The rotation shaft drives the gear set. The saw teeth member engages with the gear set. The connection member has an end pivotally connected with a bottom surface of the keyboard and an opposite end pivotally connected with the saw teeth member. When the display portion swivels relative to the main portion, the rotation shaft drives the gear set, the saw teeth member and the connection member to move simultaneously so as to swivel the keyboard relative to the top surface.

Abstract: A utility tub is provided with a sink area having support surfaces for removably supporting a tray. The tray may hold items that are drying. In addition, the utility tub may be provided with an enlarged area for supporting other items, and various accessories such as a towel rack or towel pegs.

Abstract: The invention relates to a substrate with slot. The substrate of the invention comprises an active surface and a plurality of metal plates. The metal plates are formed on the active surface. Each metal plate has a first surface and a second surface. The first surface is connected to the active surface. At least one metal plate has at least one slot formed on the second surface. Therefore, according to the substrate with slot of the invention, a resin for connecting a chip and the metal plates can entirely seal sides and corners of the chip so as to prevent water or dust from entering the chip and protect the chip.

Abstract: A method of selectively hydrogenating a conjugated diene by using a supported ionic liquid nano-palladium catalyst. The supported ionic liquid nano-palladium catalyst, hydrogen and a reactant having the conjugated diene react at a temperature ranging from 40 to 120° C. and a pressure ranging from 100 to 400 psig. A ratio of the catalyst to the reactant ranges from 1/20 to 1/250 (g/ml).

Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.