Abstract: A toilet bowl-mounted urinalysis unit (14) adapted to be readily mounted to a standard water closet bowl fixture (12) for sampling and analysis of urine at a toilet. The unit (14) includes a substantially self-contained housing (22) which is designed to be mounted on the upper surface of the standard bowl fixture (12) between the bowl (16) and the flushing water supply section (18). Hinged to the housing (22) is a toilet seat (24) to which is mounted a urine sampling device (26) designed such that urine excreted into the bowl (16) is sampled in mid-air within the inner space of the bowl. The housing (22) receives a urinalysis device (50) with a polarographic flow cell and a syringe pump (52) for transferring a urine sample to the flow cell together with a carrier liquid. The polarographic flow cell has a working electrode supporting an enzyme. In one embodiment, a reservoir for the carrier liquid is received within the housing (22).

Abstract: A method and an apparatus (26) for sampling urine at a toilet equipped with a standard water closet bowl fixture. An elongated urine sampling vessel (96) extending transversely of the bowl fixture is used. While supported in such a manner that the axis thereof extends horizontally and perpendicular to the vertical central plane of the bowl fixture, the urine sampling vessel (96) is moved along the inner surface of the bowl (16) of the fixture and is brought to an optimum sampling position in the bowl space (16A). As the urine sampling vessel is adapted to any fore-and aft and lateral deviation of the direction of urination of an individual, urine is effectively sampled even by a sampling vessel which is small in size. The sampling vessel (96) is mounted to an end of a swing arm (94) having a horizontal pivot axis. In a simplest form of embodiment, only rotational movement is imparted to the swing arm (94).

Abstract: A method and an apparatus (30) for sampling urine at a toilet (10) equipped with a standard water closet bowl fixture (12). An elongated, curved, urine sampling trough (32) having a U-shaped cross-section is used. For sampling of urine, the sampling trough (32) is positioned in the vertical central plane (46) of the toilet bowl fixture in such a manner that it extends obliquely between the upper front region and the bottom region of the inner space of the bowl (14). As the urine sampling trough (32) covers a substantial length in the vertical direction as well as in the fore-and-aft direction, the urine column hits on the sampling trough even when the trajectory of urine column is fluctuated in the vertical or fore-and-aft direction, whereby urine is effectively sampled. As the urine sampling trough is elongated and curved, it can be readily stored under the toilet seat when not in use.

Abstract: A dielectric ceramic for use in an electrostatic chuck, formed by firing in a reducing atmosphere a ceramic material mainly comprised of alumina, wherein said ceramic material comprises an alkaline earth metal in an amount of from 1.0 to 6.0% by weight in terms of oxide and a transition metal in an amount of from 0.5 to 6.0% by weight in terms of oxide, while controlling the dew point of atmosphere gas to be not more than 45.degree. C.Also disclosed is a method of making a dielectric ceramic for use in an electrostatic chuck, comprising firing a ceramic material mainly comprised of alumina and containing from 1.0 to 6.0% by weight of an alkaline earth metal in terms of oxide and from 0.5 to 6.0% by weight of a transition metal in terms of oxide, in a reducing atmosphere while controlling the dew point of atmosphere gas.

Abstract: The constituent members of a semiconductor element-manufacturing apparatus which are formed by depositing a silicon carbide layer on a carbon substrate, and wherein a peak X-ray diffraction on the (200) plane of the silicon carbide layer has a half value width of 0.35.degree. or less as measured by the C.sub.u --K.sub..alpha. ray used in the X-ray diffraction analysis.

Abstract: The constituent members of a semiconductor element-manufacturing apparatus which are formed by depositing a silicon carbide layer on a carbon substrate, and wherein a peak X-ray diffraction on the (200) plane of the silicon carbide layer has a half value width of 0.35.degree. or less as measured by the C.sub.u -K.sub..alpha. ray used in the X-ray diffraction analysis.