Abstract: A compressed powder body comprises metal particles and an interposed substance which is interposed between the metal particles. Each of the metal particles is made of FeSiAl-based soft magnetic alloy and has a flat shape when seen along a predetermined direction. The metal particles include one or more of the metal particles each of which is formed with one or more predetermined holes. Each of the predetermined holes passes through the metal particle in the predetermined direction. Each of the predetermined holes has a maximum width in a predetermined plane perpendicular to the predetermined direction the maximum width being equal to or larger than a thickness of the metal particle with the predetermined hole in the predetermined direction.

Abstract: There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 ?m to 1.3 ?m.

Abstract: A vibration detection system comprises a battery-less vibration sensor and an interrogator. The sensor comprises a single port surface acoustic wave resonator. The interrogator continuously transmits a carrier wave signal to the resonator while receiving a wave signal reflected from the resonator. The reflected wave signal includes components other than the transmitted carrier wave signal if the sensor senses a vibration event. Based the reflected wave signal, the interrogator judges whether the vibration event occurs.

Abstract: There is provided a semiconductor wafer treatment member in which the occurrence of slippage thereof is prevented and which has an adequate cohesiveness onto the semiconductor wafer and an excellent durability. The semiconductor wafer treatment member A of the present invention has at least a surface formed with a silicon carbide (SiC) film thereon, comprising a support portion for receiving a semiconductor wafer, said support portion being composed of salients with which said semiconductor wafer substantially comes into contact; and depressions formed with the silicon carbide (SiC) film to provide a coverage area between said salients, said salients being formed with top surfaces having a surface roughness Ra of 0.05 &mgr;m to 1.3 &mgr;m.