Patents by Inventor Chien-Chang Chao

Chien-Chang Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9245758
    Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: January 26, 2016
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventors: Wei-Yang Ma, Chien-Chang Chao, Guan-Lin Chen, Tsun-Neng Yang
  • Publication number: 20150072468
    Abstract: A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.
    Type: Application
    Filed: July 14, 2014
    Publication date: March 12, 2015
    Inventors: WEI-YANG MA, CHIEN-CHANG CHAO, GUAN-LIN CHEN, TSUN-NENG YANG
  • Patent number: 8852995
    Abstract: The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: October 7, 2014
    Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
    Inventors: Yu-Han Su, Tsun-Neng Yang, Wei-Yang Ma, Chien-Chang Chao, Shan-Ming Lan