Abstract: A Lamb wave resonator includes a piezoelectric material layer, a first finger electrode, a second finger electrode, at least two floating electrodes, and at least two gaps. The first finger electrode is disposed on one side of the piezoelectric material layer and includes a first main portion and first fingers. The second finger electrode is disposed on the side of the piezoelectric material layer and includes a second main portion and second fingers. The first fingers are parallel to and alternately arranged with the second fingers. The floating electrodes are disposed between each first finger and each second finger, and the gaps are disposed at two ends of each floating electrode, respectively.

Abstract: A Lamb wave resonator includes a piezoelectric material layer, a first finger electrode, a second finger electrode, at least two floating electrodes, and at least two gaps. The first finger electrode is disposed on one side of the piezoelectric material layer and includes a first main portion and first fingers. The second finger electrode is disposed on the side of the piezoelectric material layer and includes a second main portion and second fingers. The first fingers are parallel to and alternately arranged with the second fingers. The floating electrodes are disposed between each first finger and each second finger, and the gaps are disposed at two ends of each floating electrode, respectively.

Abstract: A capacitive biosensor is provided. The capacitive biosensor includes: a transistor, an interconnect structure on the transistor, and a passivation layer on the interconnect structure. The interconnect structure includes a first metal structure on the transistor, a second metal structure on the first metal structure, and a third metal structure on the second metal structure. The third metal structure includes a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The passivation has an opening exposing a portion of the third metal structure. The capacitive biosensor further includes a sensing region on the interconnect structure. The sensing region includes a first sensing electrode and a second sensing electrode. The first sensing electrode is formed of the third conductive layer, and the second sensing electrode is disposed on the passivation layer.

Abstract: A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Abstract: An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Abstract: A magnetoresistive device includes a magnetoresistor disposed over a substrate, a stress release structure covering a side surface of the magnetoresistor, an electrical connection structure disposed over the magnetoresistor, and a passivation layer disposed over the electrical connection structure and the stress release structure.

Abstract: A magnetoresistor device includes a magnetoresistor, a protection layer, a first conductive structure, and a second conductive structure. The magnetoresistor is disposed over a substrate. The protection layer is formed over a portion of the magnetoresistor. The first conductive structure is disposed over the protection layer and includes a lower barrier layer and a metal layer disposed over the lower barrier layer. The second conductive structure is disposed over the substrate and partially covers the magnetoresistor. The second conductive structure includes the lower barrier layer and the metal layer disposed over the lower barrier layer.

Abstract: An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Abstract: An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Abstract: A magnetoresistor device includes a magnetoresistor, a protection layer, a first conductive structure, and a second conductive structure. The magnetoresistor is disposed over a substrate. The protection layer is formed over a portion of the magnetoresistor. The first conductive structure is disposed over the protection layer and includes a lower barrier layer and a metal layer disposed over the lower barrier layer. The second conductive structure is disposed over the substrate and partially covers the magnetoresistor. The second conductive structure includes the lower barrier layer and the metal layer disposed over the lower barrier layer.

Abstract: An electrical contact structure and a method for forming the electrical contact structure are provided. The method includes forming a thin film material layer on a substrate, forming a first barrier layer on the thin film material layer and forming a metal layer on the first barrier layer. The method further includes patterning the metal layer to form a metal pattern, forming a spacer on a sidewall of the metal pattern and covering a portion of the first barrier layer. The method further includes etching the first barrier layer, wherein the portion of the first barrier layer located under the spacer is not completely etched. The method further includes removing the spacer and exposing the sidewall of the metal pattern to form an electrical contact structure on the thin film material layer, wherein the first barrier layer has a protrusion part exceeding the sidewall of the metal pattern.

Abstract: A high-solubility and high-adhesion poly(amide-imide-ester) resin prepared from a monomer composition comprising: (a) a diisocyanate such as diphenylmethane 4,4'diisocyanate; (b) a trimellitic anhydride; and (c) a bis-anhydride of trimellitic anhydride such as 1,2 bis(trimellitate)ethane dianhydride, dissolved in an appropriate solvent system. Each of the trimellitic anhydride and the bisanhydride of trimellitic anhydride constitutes 1 to 40%, on a molar basis, of the monomer composition and the amount of the diisocyanate is about 1.0 to 1.2 times, also on a molar basis, the sum of the trimellitic anhydride and the bis-anhydride of trimellitic anhydride. In an alternate embodiment, a fourth component (d) diacid such as isophthalic acid can be added to the monomer composition. After the polymerization reaction, the poly(amide-imide-ester) resin so produced can be diluted with a variety of organic solvents, such as xylene and dimethylacetamide, etc.

Abstract: It is disclosed a process for producing an easily removable polyimide film comprising the steps of:(1) coating on a substrate a first layer of polyamic acid resin;(2) coating on the first layer of polyamic acid resin a second layer of polyamic acid resin which is pre-mixed with a salt of Cu, Cr, Ni or Fe, and(3) baking the first layer and the second layer, whereby polyamic acid in both layers are cyclized to form a polyimide film.Easily removable polyimide film prepared by the above process is also disclosed.

Abstract: Disclosed is a polyester-imide prepared from a condensation polymerization of aromatic diacid, diimide diacid, and diol, having a carboxy to hydroxy equivalent molar ratio of 0.9:1 to 1.1:1. The disclosed polyester-imide has outstanding heat-resistance, remarkable filming ability, and high solubility in both phenol series and amide series solvents.

Abstract: A heat-resistant and high-transparence polyesterimide composition is disclosed which is prepared from the reaction of: (a) an imidihydroxycarboxylic acid represented by the following formula: ##STR1## (b) at least one dicarboxylic, such as terephthalic acid or isophthalic acid, or mixture thereof, and (c) at least one dihydroxy compound represented by the following formula: ##STR2## Wherein Y can be --C(CH.sub.3).sub.2 --, --SO.sub.2 --, --CH(CH.sub.3)--, --(CH.sub.2).sub.m --, where m in an integer of 1 to 10, --O--, or --S--; X can be H, Cl, or Br; and n is an integer of 0 to 4. The polyesterimide resins disclosed in this invention also exhibit improved fabricability due to their improved solubility in organic solvents, and improved mechanical strength.