Abstract: A method of aligning a wafer includes defining a reference direction for aligning the wafer; capturing an image of the wafer held on a chuck; using an identifying module to analyze a straight line on the image of the wafer; calculating an offset angle between the straight line and the reference direction; and calibrating the offset angle to align the straight line with the reference direction by way rotating the chuck.

Abstract: A lens assembly includes a first lens, a second lens, a third lens, a fourth lens, a fifth lens, and a reflective element. The first lens is with refractive power and includes a concave surface facing an object side along an axis. The second lens is with refractive power and includes a convex surface facing the object side along the axis. The third, fourth, and fifth lenses are with refractive power. The reflective element includes a reflective surface. The first, second, third, fourth, and fifth lenses are arranged in order from the object side to an image side along the axis. The reflective element is disposed between the first lens and the fifth lens. The lens assembly satisfies: 2 mm<L<6 mm; wherein L is an interval from an object side surface of the first lens to the reflective surface along the axis.

Abstract: A camera device includes a plurality of lenses and an annular body having a fixed hole. The plurality of lenses and the annular body are arranged between an object side and an image side along an optical axis. The annular body includes an annular main body, an outer circumferential portion, and an inner circumferential portion, wherein the annular main body connects to the outer circumferential portion and the inner circumferential portion, and the inner circumferential portion is non-circular and surrounds the optical axis to form the fixed hole. The camera device satisfies: EFL/?{square root over (4A/?)}=(EFL/Dx+EFL/Dy)×K1; K1?0.49, where EFL is an effective focal length of the camera device, A is an area of the fixed hole, K1 is a coefficient, Dx is a maximum dimension of the fixed hole through which the optical axis passes, and Dy is a minimum dimension of the fixed hole through which the optical axis passes.

Abstract: A method for fabricating a static random access memory (SRAM) includes the steps of: forming a gate structure on a substrate; forming an epitaxial layer adjacent to the gate structure; forming a first interlayer dielectric (ILD) layer around the gate structure; transforming the gate structure into a metal gate; forming a contact hole exposing the epitaxial layer, forming a barrier layer in the contact hole, forming a metal layer on the barrier layer, and then planarizing the metal layer and the barrier layer to form a contact plug. Preferably, a bottom portion of the barrier layer includes a titanium rich portion and a top portion of the barrier layer includes a nitrogen rich portion.

Abstract: A method for compensating to a first distance between a probe tip and a device under test (DUT) after a temperature change of the DUT includes: capturing a first image having the probe and its reflected image on a reflective surface of the DUT at a first temperature; measuring a second distance between a reference point of the probe and its reflected image; changing the first temperature of the DUT to a second temperature; capturing a second image having the probe and its reflected image on the reflective surface at the second temperature; measuring a third distance between the reference point of the probe and its reflected image; dividing the difference between the third and the second distances by two to obtain a fourth distance; and determining a relative position between the probe and the DUT by the fourth distance to compensate to the first distance.

Abstract: A static random access memory (SRAM) includes a substrate having a first active region and a second active region adjacent to the first active region. A first gate structure is disposed on the substrate and across the first active region and the second active region. A second gate structure is adjacent to a first side of the first gate structure. A first lower contact structure is disposed on the first active region and adjacent to a second side of the first gate structure. A first upper contact structure is disposed on and in direct contact with the first lower contact structure. A top surface of the first lower contact structure and a sidewall of the first upper contact structure comprise a step profile therebetween.

Abstract: A method of determining a first distance between a probe and a wafer held by a wafer probe station includes adjusting a microscope at a specific magnification; moving the microscope perpendicularly relative to a chuck to focus on the chuck to obtain a clear image of the chuck; defining a specific position of the microscope after the clear image of the chuck is obtained; maintaining the specific magnification of the microscope and moving the microscope perpendicularly relative to the chuck from the specific position by a travelling distance to focus on the probe to obtain a clear image of the probe; and determining the travelling distance minus a thickness of a wafer to be placed on a side of the chuck facing to the microscope as the first distance between the probe and the wafer.

Abstract: A display device is provided. The display device includes a first substrate, a second substrate, a liquid-crystal layer, a first electrode, and an opposite electrode. The liquid-crystal layer is disposed between the first substrate and the second substrate. The first electrode is disposed on the first substrate. The opposite electrode is disposed on the side of the second substrate that faces the first substrate. The first electrode includes a first main portion and a plurality of first extending portions. The first extending portions are connected to the first main portion, at least one of the first extending portions includes a first side, a second side, and a curved structure. The curved structure connects the first side to the second side, and the curved structure has a first curvature radius greater than zero.

Abstract: An antenna system and an electronic device are provided. The antenna system includes a first substrate, a first antenna group, and a second antenna group. The first antenna group includes four first antennas that are disposed on a peripheral area of the first substrate. The second antenna group includes four second antennas that are disposed in an array on a second substrate. The four second antennas of the second antenna group are disposed above a central area of the first substrate. The central area of the first substrate has a recess. The second substrate is disposed above the recess. A first predetermined distance is defined between a bottom of the second substrate and the recess of the first substrate. A second predetermined distance is defined between the second substrate and the first substrate. The first predetermined distance is greater than the second predetermined distance.

Abstract: A control method of a touch display apparatus applicable to a probe station is provided. The probe station includes a movable element. The movable element is a chuck stage, a camera stage, a probe platen, or a positioner. The control method of a touch display apparatus includes displaying a first window and a second window on a touch display apparatus; displaying an operation interface on the first window and displaying a real-time image on the second window; and detecting a touch instruction generated on the operation interface, where the movable element moves according to the touch instruction.

Abstract: In an embodiment, a device includes: a substrate; a first semiconductor layer extending from the substrate, the first semiconductor layer including silicon; a second semiconductor layer on the first semiconductor layer, the second semiconductor layer including silicon germanium, edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, the second germanium concentration being less than the first germanium concentration, the edge portions of the second semiconductor layer including sides and a top surface of the second semiconductor layer; a gate stack on the second semiconductor layer; lightly doped source/drain regions in the second semiconductor layer, the lightly doped source/drain regions being adjacent the gate stack; and source and drain regions extending into the lightly doped source/drain regions.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean the recess; treating the recess with a plasma process; and performing a dry etch process to clean the recess after the plasma process and the wet etch process.

Abstract: A contra-rotating fan structure includes a first base, a first fan, a second base, and a second fan. The first fan is rotatably disposed on the first base and includes a first hub. The first hub has a first largest width. The second fan is rotatably disposed on the second base and includes a second hub. The second hub has a second largest width. The first base and the second base are located between the first fan and the second fan. The second largest width is greater than the first largest width.

Abstract: A method for analyzing a process output and a method for creating an equipment parameter model are provided. The method for analyzing the process output includes the following steps: A plurality of process steps are obtained. A processor obtains a step model set including a plurality of first step regression models, each of which represents a relationship between N of the process steps and a process output. The processor calculates a correlation of each of the first step regression models. The processor picks up at least two of the first step regression models to be a plurality of second step regression models whose correlations are ranked at top among the correlations of the first step regression models. The processor updates the step model set by a plurality of third step regression models, each of which represents a relationship between M of the process steps and the process output.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: A display method of a display apparatus is provided. The method includes: displaying, on a touch display apparatus, a first window and a second window that overlap with each other, where the first window is smaller than the second window; displaying a first image on the first window, and displaying a second image on the second window, where the second image is an image captured by the camera module in real time; displaying the first image on the second window and displaying the second image on the first window according to the first touch instruction; and displaying the first image on the first window and displaying the second image on the second window according to the second touch instruction.

Abstract: A bean roasting apparatus with a stirring barrel body, a receiving structure and an image capturing assembly is provided. The stirring barrel body has an opening. The receiving structure has a bean-through opening and an observation opening. The image capturing assembly has at least one image capturing device and a reflective surface which is disposed in the capturing scope of the at least one image capturing device and is tilted facing the at least one image capturing device and the observation opening. Therefore, the at least one image capturing device can capture an image inside the receiving structure through the reflective surface and the observation opening. Another bean roasting apparatus with an image capturing assembly is provided, wherein at least one image capturing device of the image capturing assembly can capture an image inside the receiving structure through the observation opening directly.

Abstract: In an embodiment, a method of forming a semiconductor device includes forming a fin protruding above a substrate; forming a gate structure over the fin; forming a recess in the fin and adjacent to the gate structure; performing a wet etch process to clean the recess; treating the recess with a plasma process; and performing a dry etch process to clean the recess after the plasma process and the wet etch process.

Abstract: A method for fabricating a semiconductor device includes the steps of providing a semiconductor substrate; forming a tunnel dielectric on the semiconductor substrate; forming a floating gate on the tunnel dielectric; forming an insulation layer conformally disposed on the top surface and the sidewall surface of the floating gate; forming a control gate disposed on the insulation layer and the floating gate; and forming a spacer continuously distributed on the sidewall surfaces of the floating gate and the control gate, where the spacer overlaps portions of the top surface of the floating gate.