Patents by Inventor Chien-Kang Chou
Chien-Kang Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7960269Abstract: A method for fabricating a circuitry component comprises depositing a first metal layer over a substrate; forming a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposing said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; removing said first pattern-defining layer; forming a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposing said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first metal layer not under said second metal layer; and forming a polymer layer over said second metal layer, wherein said third metal layer is used as a metal bump bonded to an external circuitry.Type: GrantFiled: July 24, 2006Date of Patent: June 14, 2011Assignee: Megica CorporationInventors: Hsin-Jung Lo, Mou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou
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Patent number: 7960270Abstract: A cylindrical bonding structure and its method of manufacture. The cylindrical bonding structure is formed over the bonding pad of a silicon chip and the chip is flipped over to connect with a substrate board in the process of forming a flip-chip package. The cylindrical bonding structure mainly includes a conductive pillar and a solder cap. The conductive pillar is formed over the bonding pad of the silicon chip and the solder cap is attached to the upper end of the conductive pillar. The solder cap has a melting point lower than the conductive pillar. The solder cap can be configured into a cylindrical, spherical or hemispherical shape. To fabricate the cylindrical bonding structure, a patterned mask layer having a plurality of openings that correspond in position to the bonding pads on the wafer is formed over a silicon wafer. Conductive material is deposited into the openings to form conductive pillars and finally a solder cap is attached to the end of each conductive pillar.Type: GrantFiled: March 13, 2007Date of Patent: June 14, 2011Assignee: Megica CorporationInventors: Jin-Yuan Lee, Chien-Kang Chou, Shih-Hsiung Lin, Hsi-Shan Kuo
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Patent number: 7932172Abstract: A semiconductor chip comprises a first MOS device, a second MOS device, a first metallization structure connected to said first MOS device, a second metallization structure connected to said second MOS device, a passivation layer over said first and second MOS devices and over said first and second metallization structures, and a third metallization structure connecting said first and second metallization structures.Type: GrantFiled: November 19, 2008Date of Patent: April 26, 2011Assignee: Megica CorporationInventors: Mou-Shiung Lin, Chien-Kang Chou, Hsin-Jung Lo
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Publication number: 20110049515Abstract: A chip structure comprising a silicon substrate, a MOS device, dielectric layers, a metallization structure, a passivation layer, a plurality of metal layers and a polymer layer. The metallization structure comprises a first circuit layer and a second circuit layer over the first circuit layer, and comprises a damascene electroplated copper. The passivation layer is over the metallization structure and dielectric layers, the passivation layer including a first opening exposing a contact point of the metallization structure. The polymer layer is disposed over the passivation layer and the first metal layer, a second opening in the polymer layer being over a second contact point of the first metal layer, the polymer layer covering a top surface and sidewall of the first metal layer. The second contact point is connected to the first contact point through the first opening, the second opening not being vertically over the first opening.Type: ApplicationFiled: November 7, 2010Publication date: March 3, 2011Applicant: MEGICA CORPORATIONInventors: Nick Kuo, Chiu-Ming Chou, Chien-Kang Chou, Chu-Fu Lin
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Patent number: 7880304Abstract: A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric and a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide post-passivation interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick passivation interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.Type: GrantFiled: February 13, 2009Date of Patent: February 1, 2011Assignee: Megica CorporationInventors: Mou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou
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Patent number: 7855461Abstract: A chip structure comprising a semiconductor substrate, a plurality of dielectric layers, a plurality of circuit layers, a passivation layer, a metal layer and at least a bump. The semiconductor substrate has a plurality of electronic devices positioned on a surface layer of the semiconductor substrate. The dielectric layers are sequentially stacked on the semiconductor substrate and have a plurality of via holes. The circuit layers are disposed on one of the dielectric layers, wherein the circuit layers are electrically connected with each other through the via holes and are electrically connected to the electronic devices. The passivation layer is disposed over the circuit layers and the dielectric layers, wherein the passivation layer comprises an opening that exposes one of the metal layers. The metal layer is disposed over the passivation layer, wherein the metal layer comprises at least a bump pad and at least a testing pad, the bump pad electrically connecting with the testing pad.Type: GrantFiled: May 27, 2008Date of Patent: December 21, 2010Assignee: Megica CorporationInventors: Nick Kuo, Chiu-Ming Chou, Chien-Kang Chou, Chu-Fu Lin
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Publication number: 20090309224Abstract: A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first and second metallic posts, first and second bumps over the first and second metallic posts or over the insulating layer. The first and second metallic posts have a height of between 20 and 300 microns, with the ratio of the maximum horizontal dimension thereof to the height thereof being less than 4. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns.Type: ApplicationFiled: August 24, 2009Publication date: December 17, 2009Applicant: MEGICA CORPPORATIONInventors: Mou-Shiung Lin, Chien-Kang Chou, Ke-Hung Chen
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Publication number: 20090218687Abstract: The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.Type: ApplicationFiled: May 13, 2009Publication date: September 3, 2009Applicant: MEGICA CORPORATIONInventors: Chiu-Ming Chou, Chien-Kang Chou, Ching-San Lin, Mou-Shiung Lin
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Patent number: 7582556Abstract: A circuit structure includes a semiconductor substrate, first and second metallic posts over the semiconductor substrate, an insulating layer over the semiconductor substrate and covering the first and second metallic posts, first and second bumps over the first and second metallic posts or over the insulating layer. The first and second metallic posts have a height of between 20 and 300 microns, with the ratio of the maximum horizontal dimension thereof to the height thereof being less than 4. The distance between the center of the first bump and the center of the second bump is between 10 and 250 microns.Type: GrantFiled: June 26, 2006Date of Patent: September 1, 2009Assignee: MEGICA CorporationInventors: Mou-Shiung Lin, Chien-Kang Chou, Ke-Hung Chen
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Patent number: 7554208Abstract: In the present invention, copper interconnection with metal caps is extended to the post-passivation interconnection process. Metal caps may be aluminum. A gold pad may be formed on the metal caps to allow wire bonding and testing applications. Various post-passivation passive components may be formed on the integrated circuit and connected via the metal caps.Type: GrantFiled: May 31, 2007Date of Patent: June 30, 2009Assignee: Megica Corp.Inventors: Mark Chou, Michael Chen, Mou-Shiung Lin, Chien-Kang Chou
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Patent number: 7547969Abstract: The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.Type: GrantFiled: October 28, 2005Date of Patent: June 16, 2009Assignee: Megica CorporationInventors: Chiu-Ming Chou, Chien-Kang Chou, Ching-San Lin, Mou-Shiung Lin
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Publication number: 20090146305Abstract: A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric and a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide post-passivation interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick passivation interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.Type: ApplicationFiled: February 13, 2009Publication date: June 11, 2009Applicant: MEGICA CORPORATIONInventors: Mou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou
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Publication number: 20090108453Abstract: A method for fabricating a metallization structure comprises depositing a first metal layer; depositing a first pattern-defining layer over said first metal layer, a first opening in said first pattern-defining layer exposes said first metal layer; depositing a second metal layer over said first metal layer exposed by said first opening; depositing a second pattern-defining layer over said second metal layer, a second opening in said second pattern-defining layer exposes said second metal layer; depositing a third metal layer over said second metal layer exposed by said second opening; removing said second pattern-defining layer; removing said first pattern-defining layer; and removing said first metal layer not under said second metal layer.Type: ApplicationFiled: September 1, 2008Publication date: April 30, 2009Applicant: MEGICA CORPORATIONInventors: Mou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou, Hsin-Jung Lo
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Publication number: 20090104769Abstract: A method for fabricating a circuitry component includes providing a semiconductor substrate, a first coil over said semiconductor substrate, a passivation layer over said first coil; and depositing a second coil over said passivation layer and over said first coil. Said second coil may be deposited by forming a first metal layer over said passivation layer, forming a pattern defining layer over said first metal layer, a first opening in said pattern defining layer exposing said first metal layer, forming a second metal layer over said first metal layer exposed by said first opening, removing said pattern defining layer, and removing said first metal layer not under said second metal layer.Type: ApplicationFiled: November 24, 2008Publication date: April 23, 2009Applicant: MEGICA CORPORATIONInventors: Wen-Chieh Lee, Mou-Shiung Lin, Chien-Kang Chou, Yi-Cheng Liu, Chiu-Ming Chou, Jin-Yuan Lee
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Patent number: 7521805Abstract: A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric and a thick second layer of dielectric is created over the surface of the layer of passivation. Thick and wide post-passivation interconnect lines are created in the thick second layer of dielectric. The first layer of dielectric may also be eliminated, creating the wide thick passivation interconnect network on the surface of the layer of passivation that has been deposited over the surface of a substrate.Type: GrantFiled: October 23, 2007Date of Patent: April 21, 2009Assignee: Megica Corp.Inventors: Mou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou
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Publication number: 20090065871Abstract: A semiconductor chip comprises a first MOS device, a second MOS device, a first metallization structure connected to said first MOS device, a second metallization structure connected to said second MOS device, a passivation layer over said first and second MOS devices and over said first and second metallization structures, and a third metallization structure connecting said first and second metallization structures.Type: ApplicationFiled: November 19, 2008Publication date: March 12, 2009Applicant: MEGICA CORPORATIONInventors: Mou-Shiung Lin, Chien-Kang Chou, Hsin-Jung Lo
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Publication number: 20090057895Abstract: A post passivation rerouting support structure comprises a relatively thin support layer above the passivation layer to support the RDL, and a relatively thick support layer for fine pitch interconnects extending from the RDL and terminating as contact structures at the surface of the thick support layer, for a next level packaging structure. The thick support layer is planarized before defining the contact structures. The thick support layer may be formed after the conducting posts have been formed, or the thick support layer is formed before forming the conducting posts in vias formed in the thick support layer. An encapsulating layer may be provided above the thick support layer, which top surface is planarized before defining the contact structures. The encapsulating layer and the further support layer may be the same layer.Type: ApplicationFiled: November 4, 2008Publication date: March 5, 2009Applicant: MEGICA CORPORATIONInventors: Mou-Shiung Lin, Chien-Kang Chou, Ke-Hung Chen
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Publication number: 20090053887Abstract: In the present invention, copper interconnection with metal caps is extended to the post-passivation interconnection process. Metal caps may be aluminum. A gold pad may be formed on the metal caps to allow wire bonding and testing applications. Various post-passivation passive components may be formed on the integrated circuit and connected via the metal caps.Type: ApplicationFiled: May 31, 2007Publication date: February 26, 2009Applicant: MEGICA CORPORATIONInventors: Mou-Shiung Lin, Michael Chen, Chien-Kang Chou, Mark Chou
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Patent number: 7482268Abstract: The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I/O pads.Type: GrantFiled: October 23, 2007Date of Patent: January 27, 2009Assignee: Megica CorporationInventors: Mou-Shiung Lin, Chiu-Ming Chou, Chien-Kang Chou
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Patent number: 7473999Abstract: A semiconductor chip comprises a first MOS device, a second MOS device, a first metallization structure connected to said first MOS device, a second metallization structure connected to said second MOS device, a passivation layer over said first and second MOS devices and over said first and second metallization structures, and a third metallization structure connecting said first and second metallization structures.Type: GrantFiled: September 24, 2006Date of Patent: January 6, 2009Assignee: MEGICA CorporationInventors: Mou-Shiung Lin, Chien-Kang Chou, Hsin-Jung Lo