Abstract: A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.

Abstract: A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Abstract: A wireless signal access apparatus receives wireless signals of IEEE 802.11 standard for controlling at least one appliance. The appliance may receive control signals of IEEE 802.15 standard, to be controlled according to the control signals. The wireless signal access apparatus receives the wireless signals having control data to generate the control signal of IEEE 802.15 standard, and send it to the appliance for omnidirectional remote control of the appliance.

Abstract: A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

Abstract: A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.

Abstract: A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.

Abstract: A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the gate electrode of the second MOS, wherein the first MOS includes a first high-K material and a first metal for use in a first gate, and a second MOS includes a second high-K material and a second metal for use in a second gate. Then the first gate and the second gate are partially removed to form a connecting recess. Afterwards, the connecting recess is filled with a conductive material to form a bridge channel for electrically connecting the first metal and the second metal.

Abstract: An organic/inorganic hybrid composite proton exchange membrane is provided. The proton exchange membrane includes an inorganic material of about 0.5-30 parts by weight and an organic material of about 99.5-70 parts by weight per 100 parts by weight of the proton exchange membrane. A surface area of the inorganic material is about 50-3000 m2/g. The organic material includes a sulfonated polymer or a phosphoric acid doped polymer.

Abstract: A method for fabricating metal gate transistors and a polysilicon resistor is disclosed. First, a substrate having a transistor region and a resistor region is provided. A polysilicon layer is then formed on the substrate to cover the transistor region and the resistor region of the substrate. Next, a portion of the polysilicon layer disposed in the resistor is removed, and the remaining polysilicon layer is patterned to create a step height between the surface of the polysilicon layer disposed in the transistor region and the surface of the polysilicon layer disposed in the resistor region.

Abstract: An image capturing device includes an image sensing unit, a shutter button mechanism, and a control unit. The image sensing unit includes a lens module and an image sensor. The shutter button mechanism is operable to generate a trigger signal when pressed and to generate a release signal when the shutter button mechanism is released after being pressed. The control unit is configured to perform, in response to the release signal from the shutter button mechanism, a picture taking procedure for controlling the image sensing unit to capture an image.

Abstract: A method for fabricating a transistor having metal gate is disclosed. First, a substrate is provided, in which the substrate includes a first transistor region and a second transistor region. A plurality of dummy gates is formed on the substrate, and a dielectric layer is deposited on the dummy gate. The dummy gates are removed to form a plurality of openings in the dielectric layer. A high-k dielectric layer is formed to cover the surface of the dielectric layer and the opening, and a cap layer is formed on the high-k dielectric layer thereafter. The cap layer disposed in the second transistor region is removed, and a metal layer is deposited on the cap layer of the first transistor region and the high-k dielectric layer of the second transistor region. A conductive layer is formed to fill the openings of the first transistor region and the second transistor region.

Abstract: A gate structure of a semiconductor device includes a first low resistance conductive layer, a second low resistance conductive layer, and a first type conductive layer disposed between and directly contacting sidewalls of the first low resistance conductive layer and the second low resistance conductive layer.

Abstract: A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

Abstract: A metal gate transistor is disclosed. The metal gate transistor preferably includes: a substrate, a metal gate disposed on the substrate, and a source/drain region disposed in the substrate with respect to two sides of the metal gate. The metal gate includes a U-shaped high-k dielectric layer, a U-shaped cap layer disposed over the surface of the U-shaped high-k dielectric layer, and a U-shaped metal layer disposed over the U-shaped cap layer.

Abstract: A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the gate electrode of the second MOS, wherein the first MOS includes a first high-K material and a first metal for use in a first gate, and a second MOS includes a second high-K material and a second metal for use in a second gate. Then the first gate and the second gate are partially removed to form a connecting recess. Afterwards, the connecting recess is filled with a conductive material to form a bridge channel for electrically connecting the first metal and the second metal.

Abstract: A method for fabricating a semiconductor structure is disclosed. A substrate with a first transistor having a first dummy gate and a second transistor having a second dummy gate is provided. The conductive types of the first transistor and the second transistor are different. The first and second dummy gates are simultaneously removed to form respective first and second openings. A high-k dielectric layer, a second type conductive layer and a first low resistance conductive layer are formed on the substrate and fill in the first and second openings, with the first low resistance conductive layer filling up the second opening. The first low resistance conductive layer and the second type conductive layer in the first opening are removed. A first type conductive layer and a second low resistance conductive layer are then formed in the first opening, with the second low resistance conductive layer filling up the first opening.

Abstract: A semiconductor element structure includes a first MOS having a first high-K material and a first metal for use in a first gate, a second MOS having a second high-K material and a second metal for use in a second gate and a bridge channel disposed in a recess connecting the first gate and the second gate for electrically connecting the first gate and the second gate, wherein the bridge channel is embedded in at least one of the first gate and the second gate.

Abstract: The present invention provides a new method to obtain an effective diffusivity for a certain substance in solutions that diffuse through a porous material. The porous material initially separates two solutions that are different in concentration of the substance. The concentration gradient gives rise to diffusion through the porous material, The concentration change of the substance in the low-concentration compartment is detected through a measurement of the electrochemical impedance data. By means of the measurement, an effective diffusivity coefficient of the substance through the porous material is calculated.

Abstract: A method for fabricating metal gate transistor is disclosed. First, a substrate having a first transistor region and a second transistor region is provided. Next, a stacked film is formed on the substrate, in which the stacked film includes at least one high-k dielectric layer and a first metal layer. The stacked film is patterned to form a plurality of gates in the first transistor region and the second transistor region, a dielectric layer is formed on the gates, and a portion of the dielectric layer is planarized until reaching the top of each gates. The first metal layer is removed from the gate of the second transistor region, and a second metal layer is formed over the surface of the dielectric layer and each gate for forming a plurality of metal gates in the first transistor region and the second transistor region.

Abstract: A method for fabricating a transistor having metal gate is disclosed. First, a substrate is provided, in which the substrate includes a first transistor region and a second transistor region. A plurality of dummy gates is formed on the substrate, and a dielectric layer is deposited on the dummy gate. The dummy gates are removed to form a plurality of openings in the dielectric layer. A high-k dielectric layer is formed to cover the surface of the dielectric layer and the opening, and a cap layer is formed on the high-k dielectric layer thereafter. The cap layer disposed in the second transistor region is removed, and a metal layer is deposited on the cap layer of the first transistor region and the high-k dielectric layer of the second transistor region. A conductive layer is formed to fill the openings of the first transistor region and the second transistor region.