Patents by Inventor Chih-Chen JIANG

Chih-Chen JIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9871137
    Abstract: The semiconductor device structures are provided. The semiconductor device structure includes a gate stack structure formed on a substrate and an isolation structure formed in the substrate. The semiconductor device structure further includes a source/drain stressor structure formed between the gate stack structure and the isolation structure and a metal silicide layer formed on the source/drain stressor structure. A portion of the metal silicide layer is below a top surface of the isolation structure.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: January 16, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Yeh Huang, Kai-Hsiang Chang, Chih-Chen Jiang, Yi-Wei Peng, Kuan-Yu Lin, Ming-Shan Tsai, Ching-Lun Lai
  • Publication number: 20170040451
    Abstract: The semiconductor device structures are provided. The semiconductor device structure includes a gate stack structure formed on a substrate and an isolation structure formed in the substrate. The semiconductor device structure further includes a source/drain stressor structure formed between the gate stack structure and the isolation structure and a metal silicide layer formed on the source/drain stressor structure. A portion of the metal silicide layer is below a top surface of the isolation structure.
    Type: Application
    Filed: October 24, 2016
    Publication date: February 9, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO.,
    Inventors: Shin-Yeh HUANG, Kai-Hsiang CHANG, Chih-Chen JIANG, Yi-Wei PENG, Kuan-Yu LIN, Ming-Shan TSAI, Ching-Lun LAI
  • Patent number: 9478617
    Abstract: Methods for forming a semiconductor device structure are provided. The method includes providing a substrate and forming an isolation structure in the substrate. The method also includes forming a gate stack structure on the substrate and etching a portion of the substrate to form a recess in the substrate, and the recess is adjacent to the gate stack structure. The method includes forming a stressor layer in the recess, and a portion of the stressor layer is grown along the (311) and (111) crystal orientations.
    Type: Grant
    Filed: October 29, 2015
    Date of Patent: October 25, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Yeh Huang, Kai-Hsiang Chang, Chih-Chen Jiang, Yi-Wei Peng, Kuan-Yu Lin, Ming-Shan Tsai, Ching-Lun Lai
  • Publication number: 20160064486
    Abstract: Methods for forming a semiconductor device structure are provided. The method includes providing a substrate and forming an isolation structure in the substrate. The method also includes forming a gate stack structure on the substrate and etching a portion of the substrate to form a recess in the substrate, and the recess is adjacent to the gate stack structure. The method includes forming a stressor layer in the recess, and a portion of the stressor layer is grown along the (311) and (111) crystal orientations.
    Type: Application
    Filed: October 29, 2015
    Publication date: March 3, 2016
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shin-Yeh HUANG, Kai-Hsiang CHANG, Chih-Chen JIANG, Yi-Wei PENG, Kuan-Yu LIN, Ming-Shan TSAI, Ching-Lun LAI
  • Patent number: 9202916
    Abstract: Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack structure. The semiconductor device structure further includes an isolation structure formed in the substrate and a source/drain stressor structure formed adjacent to the isolation structure. The source/drain stressor structure includes a capping layer which is formed along the (311) and (111) crystal orientations.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: December 1, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shin-Yeh Huang, Kai-Hsiang Chang, Chih-Chen Jiang, Yi-Wei Peng, Kuan-Yu Lin, Ming-Shan Tsai, Ching-Lun Lai
  • Publication number: 20150187940
    Abstract: Embodiments for forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stack structure. The semiconductor device structure further includes an isolation structure formed in the substrate and a source/drain stressor structure formed adjacent to the isolation structure. The source/drain stressor structure includes a capping layer which is formed along the (311) and (111) crystal orientations.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 2, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shin-Yeh HUANG, Kai-Hsiang CHANG, Chih-Chen JIANG, Yi-Wei PENG, Kuan-Yu LIN, Ming-Shan TSAI, Ching-Lun LAI
  • Patent number: D1044493
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: October 1, 2024
    Assignees: HONGFUJIN PRECISION ELECTRONICS (ZHENGZHOU) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Eddy Liu, Jun Yan, Chih-Yuan Cheng, Wei-Da Yang, Jun Chen, Er-Wei Chen, Xiao-Ming Lv, Qi Feng, Shu-Fa Jiang, Zhe-Qi Zhao, Hsin-Ta Lin, Han Yang, Jun-Hui Zhang
  • Patent number: D1045595
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: October 8, 2024
    Assignees: HONGFUJIN PRECISION ELECTRONICS (ZHENGZHOU) CO., LTD., HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Eddy Liu, Jun Yan, Chih-Yuan Cheng, Wei-Da Yang, Jun Chen, Er-Wei Chen, Xiao-Ming Lv, Qi Feng, Shu-Fa Jiang, Zhe-Qi Zhao, Hsin-Ta Lin, Han Yang, Jun-Hui Zhang