Abstract: A method includes forming a plurality of image sensors on a front side of a semiconductor substrate, and forming a dielectric layer on a backside of the semiconductor substrate. The dielectric layer is over the semiconductor substrate. The dielectric layer is patterned into a plurality of grid-filling regions, wherein each of the plurality of grid-filling regions overlaps one of the plurality of image sensors. A metal layer is formed on top surfaces and sidewalls of the plurality of grid-filling regions. The metal layer is etched to remove horizontal portions of the metal layer, wherein vertical portions of the metal layer remain after the step of etching to form a metal grid. A transparent material is filled into grid openings of the metal grid.

Abstract: A reticle carrier including a base portion and a cover portion at least partially detachable from the base portion. The base portion and the cover portion are configured to collectively house a reticle in a region collectively defined by the base portion and the cover portion when the base portion and the cover portion are fully attached. At least a portion of an interior surface of at least one of the base portion and the cover portion is treated with a sulfide-absorbing composition, such as silver or a silver-containing alloy.